SPIN ELECTRONICS: Varied Synthetic Approaches to the Development of Room-Temperature Ferromagnetic and Semiconducting Oxide Nanostructures for Silicon Based Spintronics

该提案是响应21世纪世纪自旋电子学倡议，计划征集NSF 02-036而收到的。该提案的重点是钴掺杂的过渡金属氧化物纳米结构的自旋电子学应用的合成，表征和优化。建议的工作是基于我们最近的演示强大的铁磁和半导体行为在室温下在Co掺杂的SiO2薄膜。拟议的研究将建立铁磁，半导体CoxTi-1-xO 2的结构，光学，电子和磁性之间的相互关系，通过各种物理和化学合成路线，包括氧等离子体辅助分子束外延，反应离子束溅射沉积，和基于溶液的水热，溶胶-凝胶和水共沉淀方法。不同的合成路线应该导致不同的形态和维度，包括单晶膜（2D），纳米颗粒（OD）和纳米结构的平面阵列。从实验室到商业化操作，它们也有不同的成本和费用。将研究这些材料的自旋相关输运和磁性行为作为维度和结构的函数。对薄膜能带结构的详细评估，结合涉及SrTiO 3缓冲层的专有技术，将用于将这些薄膜集成到硅衬底上。最终目标不仅是在纳米尺度上设计这些材料，而且要开发一套广泛的标准，作为探索其他掺杂氧化物用于自旋电子学应用的可行性的框架。最后，该项目有一个广泛的教育组成部分，这将增加新的层面的研究经验和研究生参加纳米技术IGERT计划在华盛顿大学校园的培训。这一建议是由土木和机械系统，化学和运输系统和电气和通信系统在国家科学基金会的工程理事会的部门共同资助。

This proposal was received in response to the Spin Electronics for the 21st century Initiative, Program Solicitation NSF 02-036. The proposal focuses on the synthesis, characterization and optimization of Cobalt-doped transition metal oxide nanostructures for spin-electronics applications. The proposed work is based on our recent demonstration of robust ferromagnetic and semiconducting behavior at room temperature in Co-doped anatase thin films. The proposed research will establish interrelationships among the structural, optical, electronic, and magnetic properties of ferromagnetic, semiconducting CoxTi-1-x02 fabricated by a variety of physical and chemical synthesis routes, including oxygen plasma assisted molecular beam epitaxy, reactive ion-beam sputter deposition, and solution-based hydrothermal, sol-gel, and aqueous co-precipitation methods. Different synthetic routes should lead to different morphologies and dimensionalities, including single-crystal films (2D), nanoparticles (OD), and planar arrays of nanostructures. They also have different prognoses and costs for scaling from laboratory to commercial operation. Spin-dependent transport and magnetic behavior of these materials as a function of dimensionality and structure will be investigated. Detailed evaluation of the band structure of the films, combined with proprietary technology involving SrTiO3 buffer layers, will be used to integrate these films on silicon substrates. The ultimate goal will not only be to engineer these materials at the nanometer length scales, but to develop a broad set of criteria that will serve as the framework to explore the viability of other doped-oxides for spintronics applications. Finally, the project has a broad education component that will add new dimensions to the research experience and training of graduate students participating in the nanotechnology IGERT program on the UW campus.This proposal is being co-funded by the Divisions of Civil and Mechanical Systems, Chemical and Transport Systems and Electrical and Communication Systems in the Directorate of Engineering of the National Science Foundation.