Photochemical reaction at metal cluster surfaces as revealed by ultrafast vibrational spectroscopy
Photochemical reaction at metal cluster surfaces as revealed by ultrafast vibrational spectroscopy
批准号:
10640570
负责人:
WATANABE Kazuya
金额:
$2.24万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1998
资助国家:
日本
项目状态:
已结题
起止时间:
1998 至 1999
中文摘要
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英文摘要
We have investigated how intermediate species with excess energy contribute to various surface chemical reactions. We have mainly focused on the following topics :1. Reaction of carbon dioxide during the oxidation process of silicon surface :Carbon dioxide is known as a very stable molecule in gas phase. However, we have found that it is readily converted to carbonate species when it is adsorbed on silicon surface at low temperature and a surface oxidation procedure is conducted.2. Photodesorption of rare gas atoms on silicon surfacesRare gas atoms (Kr, Xe) weakly adsorb on a Si(100) surface. We found for the first time that these adsorbates are desorbed by the irradiation of photos whose wavelength range from near infrared to uv. It is revealed that the desorption occurs via energy transfer from surface hot phonon which is excited by charge recombination of photocarriers at surface states. We also found that the desorption mechanism changes to that involves charge transfer state between the substrate and the adsorbate by surface modification with oxygen or deuterium.3. Photochemistry of oxygen adsorbed on Ag(110)Photochemistry of oxygen atoms on Ag(110) has been investigated. The chemisorbed oxygen atoms are removed by uv light irradiation. It is found that slight amount of carbon atom in the surface region is necessary for the reaction. Wavelength dependence of photo-yield indicates that the phtogenerated hot-electron plays a crucial role in this reaction.4. Development of the light source for time resolved vibrational spectroscopyTHz electro-magnetic field radiation from femtosecond laser irradiated InAs surface has been investigated. Under an ultra-high vacuum condition, an effect of the surface cleanness and a temperature dependence of the THz radiation were examined. It was found that the THz radiation intensity was enhanced up to two-times by surface cleaning and up to 4 times by temperature lowering to 50 K compared to that at room temperature in air.
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Watanabe, K.: "Photo-stimulated desorption of rare gas atoms induced by UV-NIR photons at semiconductor surface"Surface Science Letters. 446. L134-L139 (2000)
Watanabe, K.:“半导体表面 UV-NIR 光子诱导的稀有气体原子的光刺激解吸”表面科学快报。
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通讯作者:
Hideyuki OHTAKE: "Enhanced THz radiation from femtosecond laser pulse irradiated InAs clean surface"Japanese Journal of Applied Physics. 38・10B. L1186-L1187 (1999)
Hideyuki OHTAKE:“飞秒激光脉冲照射 InAs 清洁表面的增强太赫兹辐射”日本应用物理学杂志 38・10B (1999)。
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通讯作者:
Kazuya WATANABE: "Photo-stimulated desorption of rare gas atoms induced by UV-NIR photons at a semiconductor surface"Surface Science Letters. 446. L134-L139 (2000)
Kazuya WATANABE:“半导体表面紫外-近红外光子诱导的稀有气体原子的光刺激解吸”表面科学快报。
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Watanabe, K.: "Effective Conversion of CO_2 to Carbonate in Surface Oxidation Processes at Si(100)" The Journal of Physical Chemistry B. 102. 8042-8048 (1998)
Watanabe, K.:“Si(100) 表面氧化过程中 CO_2 有效转化为碳酸盐”物理化学杂志 B. 102. 8042-8048 (1998)
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通讯作者:
Kazuya Watanabe: "Effective Conversion of CO_2 to Carbonate in Surface Oxdation Process at Si(100)" The Journal of Physical Chemistry B. 102・41. 8042-8048 (1998)
渡边和也:“Si(100)表面氧化过程中CO_2有效转化为碳酸盐”物理化学杂志B.102・41(1998)
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