Optical activation for the 1.5μm fuminescences of erbium-doped SiC and GaN, and its application to light emitting devices

掺铒SiC和GaN 1.5μm发光的光激活及其在发光器件中的应用

• 批准号: 10650020
• 负责人: UEKUSA Shinichiro
• 金额: $ 2.24万
• 依托单位: Meiji University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650020/
• 关键词: rare-earth doped semiconductor; wide band gap; erbium ion; SiC and GaN; optitcal activation; luminescence device; photo luminescence; ion implantation

Erbium (Er) -doped semiconductor is a potentially useful material for light-emitting devices in optical communication systems. Since the intra-4f-shell transitions of Er ions cause sharp and temperature-stable luminescence in various host materials at 1.54 μm, which corresponds to the minimum absorption of silica-based optical fibers. Photoluminescence (PL) from ErィイD13+ィエD1 in Er-doped narrow band gap semiconductors (e. g. silicon) is weak and difficult to observe at room temperature (R.T) . We found that thermal quenching of the luminescence of ErィイD13+ィエD1 was suppressed by using SiC and GaN as a host material instead of Si.(1) Er-related emission were observed at room temperature in both 3C-SiC and 6H-SiC. We found that 3C-SiC and 6H-SiC are suitable to the improvement of thermal quenching of the luminescence. Their thermal quenching were also studied on N and O codoped 3C-SiC and 6H-SiC. We investigated the influence of the introduction of elements on ErィイD13+ィエD1 luminescence in … More 3C-SiC:Er and 6H-SiC:Er. From their dose dependencies, the luminescent properties were examined using standard photoluminescence (PL) and photoluminescence excitation (PLE) technique.(2) Er jmplantation was carried out at 400 KeV and 2MeV. The luminescence properties of ErィイD13+ィエD1 ions on annealing temperature, Er dose and temperature dependencies was investigated. The optimum annealing temperature for 6H-GaN:Er was obtained. N, O and C codoped 6H-GaN were also studied on thermal quenching of ErィイD13+ィエD1 luminescence.(3) We also found that at least two radiative centers exist, according to the different temperature quenching properties. Their coupling coefficients at the activation energies were studied, respectively in 3C-SiC, 6H-SiC and 6H-GaN. Decay times of their photoluminescences from ErィイD13+ィエD1 Were also examined.Optical activation for the 1.5μm luminescence of Er doped SiC, GaN and its application to light emitting device were basically and systematically studied. We could observe Er-related emission at R. T. in both SiC:Er and GaN:Er. We are researching on the preparation process for the structure of optical device to increase the luminescence intensity of wide band gap semiconductors. Less

掺铒半导体是一种很有潜力的光通信发光器件材料。由于Er离子的4f壳层内跃迁在各种基质材料中引起了在1.54 μm处的尖锐和温度稳定的发光，这对应于二氧化硅基光纤的最小吸收。Er掺杂窄带隙半导体中Er掺杂D13+ Er掺杂D1的光致发光（PL）（e. G.硅）是弱的，并且在室温（R.T）下难以观察到。我们发现，通过使用SiC和GaN代替Si作为基质材料，Er：YAG D13+ Er：YAG D1的发光的热猝灭被抑制。(1)在3C-SiC和6 H-SiC中均观察到室温下的Er相关发射。发现3C-SiC和6 H-SiC适合于改善发光的热猝灭。在3C-SiC和6 H-SiC上研究了它们的热猝灭。研究了不同元素的引入对Er ~（3+）D_1发光的影响， ...更多信息 3C-SiC：Er和6H-SiC：Er。从它们的剂量依赖性，使用标准的光致发光（PL）和光致发光激发（PLE）技术的发光性能进行了检查。(2)在400 KeV和2 MeV下进行了Er注入。研究了Er掺杂D13+ Er掺杂D1离子的发光特性与退火温度、Er掺杂剂量和温度的关系。得到了6 H-GaN：Er的最佳退火温度。研究了N、O、C共掺杂6 H-GaN对Er ~（3+）D_1_3 + Er ~（3+）D_1发光的热猝灭效应。(3)根据不同的温度猝灭性质，我们还发现至少存在两个辐射中心。分别研究了3C-SiC、6 H-SiC和6 H-GaN在激活能下的耦合系数。对Er掺杂SiC、GaN的1.5μm发光的光激活及其在发光器件中的应用进行了初步而系统的研究。我们可以在R. T.在SiC：Er和GaN：Er中。我们正在研究光学器件结构的制备工艺，以提高宽带隙半导体的发光强度。少

项目成果

S.Uekusa, K.Awahara, and M.Kumagai: "Luminescence Prooerties of Er Implanted Polysrystalline 3C SiC Materials"Science Forum Trans. Tech Publications (Switzerland). Vols.264-268. 505-508 (1998.4)

S.Uekusa、K.Awahara 和 M.Kumagai：“Er 注入多晶 3C SiC 材料的发光特性”科学论坛 Trans。

小林剛、後藤貴之、西田和史、植草新一郎、沼田乾: "イオン注入法により作製したEr添加6H-SiCの発光"第47回応用物理学関係連合講演会予稿集(青山学院大) 28P-ZG-1. 40th,No2,No3,. (2000)

Tsuyoshi Kobayashi、Takayuki Goto、Kazushi Nishida、Shinichiro Uekusa、Ken Numata：“通过离子注入制备的 Er 掺杂 6H-SiC 的发光”第 47 届应用物理协会讲座会议记录（青山学院大学）28P-ZG-1。第 40 期，第 2 号，第 3 号，（2000 年）

K.Awahara,S.Uekusa,T.Goto,T.Kobayashi and M.Kumagai: "Luminescence Properties of Er Implanted p-type and n-type 3C SiC/Si" Nucl.Instr.Meth.in Plys.Res.B148. 507-511 (1999)

K.Awahara、S.Uekusa、T.Goto、T.Kobayashi 和 M.Kumagai：“Er 注入的 p 型和 n 型 3C SiC/Si 的发光特性”Nucl.Instr.Meth.in Plys.Res.B148

S.Uekusa, K.Awahara, and M.Kumagai,: "Luminescence Prooerties of Er Implanted Polycrystalline 3C SiC Materials"Science Forum Trans. Tech. Publications(Switzerland). 264-268. 505-508 (1998)

S.Uekusa、K.Awahara 和 M.Kumagai，：“Er 注入多晶 3C SiC 材料的发光特性”科学论坛 Trans。

S.Uekusa, T.Hirano,: "Influence of Oxygen on Er-Related Emission in GaN with A Large Yellow Band"Proceeding of the 18th Symposium on Materials Science and Engineering Research Center of ion beam Technology HOSEI UNI.. 18. 71-76 (1999)

S.Uekusa，T.Hirano，：“Oxygen on Er-Related Emission in GaN with a Large Yellow Band”第十八届离子束技术材料科学与工程研究中心研讨会论文集 HOSEI UNI.. 18. 71-