Spectroscopy of Non-Radiative Recombination Centers in Semiconductors for Light Emitting Devices

发光器件半导体中非辐射复合中心的光谱学

• 批准号: 10650035
• 负责人: KAMATA Norihiko
• 金额: $ 1.02万
• 依托单位: Saitama University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650035/
• 关键词: non-radiative recombination center; below-gap state; photoluminescence; quantum well; band-to-band emission; internal quantum efficiency; light emitting devices; non-radiative recombination parameters; 非発光再結合パラメーター; 2波長励起フォトルミネッセンス; 非発光再結合パラメータ

1. General : By observing the intensity change of band-to-band photoluminescence (PL) due to the superposition of a below-gap excitation (BGE) light on an above-gap excitation (AGE) light, a quantitative study on nonradiative recombination (NRR) centers in bulk and multiple quantum well (MQW) semiconductors became possible. Lowering the AGE density down to the single-photon-counting level improved the sensitivity of finding NRR centers. The energy distribution of the NRR centers and their spatial distribution in MQW structures became clear by tuning the energy of AGE and BGE.2. Results in GaAs/AlGaAs MQW :(1) Various levels were detected in undoped and Si-doped samples, reflecting their structures and growth conditions.(2) Spatial and energy distribution of traps was determined by considering AGE and BGE energy dependence.(3) Contrary to uniform-doping, absence of NRR centers in modulation-doped well layers became clear for the first time.(4) Trap parameters were determined self-consistently by considering the AGE and BGE density dependence.3. Results in GaN-based Semiconductors :(1) In InGaN/GaN MQW, NRR centers were found in GaN layers with the BGE energy region between 1.6 and 2.4 eV.(2) The same energy distribution was obtained in bulk GaN sample, indicating the consistency with the result of MQW.(3) NRR centers in GaN/AlGaN MQW were detected, which can be utilized for analyzing detailed recombination dynamics.

1.概述：通过观察禁带以下激发(BGE)光与禁带上激发(AGE)光的叠加引起的带间光致发光(PL)强度的变化，定量研究块体和多量子阱(MQW)半导体中的非辐射复合(NRR)中心。将年龄密度降低到单光子计数水平，提高了寻找NRR中心的灵敏度。通过调节AGE和BGE的能量，MQW结构中NRR中心的能量分布及其空间分布变得清晰。结果在GaAs/AlGaAsMQW中：(1)在未掺杂和Si掺杂样品中检测到不同的能级，反映了它们的结构和生长条件。(2)考虑了年龄和BGE能量的依赖关系，确定了陷阱的空间和能量分布。(3)与均匀掺杂相反，调制掺杂的势垒层中NRR中心的缺失首次变得明显。(4)通过考虑年龄和BGE密度的依赖关系，自洽地确定了陷阱参数。结果在GaN基半导体中：(1)在InGaN/GaN MQW中，在GaN层中发现了NRR中心，BGE能区在1.6-2.4 eV之间。(2)在体相GaN样品中得到了相同的能量分布，这与MQW的结果一致。(3)在GaN/AlGaN MQW中检测到了NRR中心，这可以用来分析详细的复合动力学。

项目成果

K. Hoshino et al.: "Distribution of below-gap states in undoped GaAs/AlGaAs Quantum Wells Revealed by Two-Wavelength Excited Photoluminescence"J. Luminescence. 79. 39-46 (1998)

K. Hoshino 等人：“双波长激发光致发光揭示了未掺杂的 GaAs/AlGaAs 量子阱中带隙下态的分布”J。

K. Hoshino et al.: "Below-gap spectroscopy of undoped GaAs/AlGaAs Quantum Wells by Two-Wavelength Excited Photoluminescence"Jpn. J. Appl. Ohys.. 37. 3210-3213 (1998)

K. Hoshino 等人：“通过双波长激发光致发光对未掺杂的 GaAs/AlGaAs 量子阱进行间隙光谱分析”Jpn。

K.Hoshino,N.Kamata et al.: "Below-Gap Spectroscopy of Undoped GaAs/AlGaAs Quantum Wells by Two-wavelength Excited Photoluminescence" Japanese Journal of Applied Physics. 37. 3210-3213 (1998)

K.Hoshino、N.Kamata 等人：“通过双波长激发光致发光对未掺杂 GaAs/AlGaAs 量子阱进行间隙光谱分析”，日本应用物理学杂志。

K. Hoshino et al.: "Absence of nonradiative recombination centers in modulation-doped quantum wells revealed by two-wavelength excited photoluminescence"Physica E.. (to be published).

K. Hoshino 等人：“双波长激发光致发光揭示调制掺杂量子阱中非辐射复合中心的不存在”Physica E..（待出版）。

K. Hoshino, J. M. Z. Ocampo, N. Kamata, et al.: "Absence of nonradiative recombination centers in modulation-doped quantum wells revealed by two-wavelength excited photoluminescence"to be published in Physica E. (2000)

K. Hoshino、J. M. Z. Ocampo、N. Kamata 等人：“通过双波长激发光致发光揭示调制掺杂量子阱中非辐射复合中心的不存在”即将发表于 Physica E. (2000)