Characterization of Defect Levels with Energy and Spatial Distribution by Deep Level Microscope
Characterization of Defect Levels with Energy and Spatial Distribution by Deep Level Microscope
批准号:
21360003
负责人:
KAMATA Norihiko
金额:
$11.07万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2011
中文摘要
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英文摘要
By utilizing both above-gap and below-gap excitation sources with a gated CCD camera, the scheme of two-wavelength excited photoluminescence has been improved to detect nonradiative recombination (NRR) centers in various materials. An energy distribution of NRR centers at around 1.55eV was obtained in an InGaN quantum well. Detection of NRR centers in InGaAs quantum wells and Ba_3Si_6O_<12>N_2:Eu^<2+> phosphors became possible for the first time.
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Ba_3Si_6O_<12>N_2 : Eu^<2+>蛍光体のフォトー及び熱ルミネッセンス評価
Ba_3Si_6O_<12>N_2:Eu^<2+>荧光粉的光致发光和热致发光评价
DOI:
--
发表时间:
2011
期刊:
電子情報通信学会EID2010-28
影响因子:
--
作者:
[石岡亮, 五十嵐航平, 福田武司, 木島直人, 鎌田憲彦]
通讯作者:
鎌田憲彦
Marked Efficiency Enhancement of AlGaN-based Deep-UV LEDs using Multiquantum-Barrier
使用多量子势垒显着提高基于 AlGaN 的深紫外 LED 的效率
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[Y. Tsukada, H. Hirayama, N. Kamata]
通讯作者:
N. Kamata
Efficiency Enhancement in AlGaN Deep-UV LEDs using High-Refle ctivity Al-based p-type Electrode (IWN2010ベストポスター賞受賞)
使用高反射率铝基 p 型电极提高 AlGaN 深紫外 LED 的效率(IWN2010 最佳海报奖获得者)
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[M.Akiba, H.Hirayama, Y.Tsukada N.Maeda, N.Kamata]
通讯作者:
N.Kamata
222nm Deep-Ultraviolet AlGaN Quantum WelLight-Emitting Diode with Vertical Emission Properties
具有垂直发射特性的222nm深紫外AlGaN量子阱发光二极管
DOI:
--
发表时间:
2010
期刊:
Appl.Phys.Exp. 3
影响因子:
--
作者:
[平山秀樹, N.Noguchi, 鎌田憲彦]
通讯作者:
鎌田憲彦
Growth of Flat and Thin p-GaN Contact Layer by NH3 Pulse-flow Method for High Light-Extraction AlGaN Deep-UV LEDs
采用 NH3 脉冲流法生长扁平薄 p-GaN 接触层,用于高光提取 AlGaN 深紫外 LED
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[M. Akiba, Y. Tomita, H. Hirayama, Y. Tsukada, N. Maeda, N. Kamata]
通讯作者:
N. Kamata
共 47 条
Luminescence Microscope for Detecting Energy Distribution of Non-Radiative Recombination Centers
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批准号:25600087
-
项目类别:Grant-in-Aid for Challenging Exploratory Research
-
资助金额:$2.25万
-
财政年份:2013
-
负责人:KAMATA Norihiko
-
依托单位:
Comprehensive multi-level spectroscopy of below-gap states without electrode
-
批准号:24360005
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$11.4万
-
财政年份:2012
-
负责人:KAMATA Norihiko
-
依托单位:
Versatile and Quantitative Spectrometer of Nonradiative recombination centers by Using Two-Wavelength Excitation method
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批准号:14350002
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.35万
-
财政年份:2002
-
负责人:KAMATA Norihiko
-
依托单位:
Spectroscopy of Non-Radiative Recombination Centers in Blue-Light Emitting Semiconductors by Two-Wavelength Excitation Scheme
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批准号:12650003
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.54万
-
财政年份:2000
-
负责人:KAMATA Norihiko
-
依托单位:
Spectroscopy of Non-Radiative Recombination Centers in Semiconductors for Light Emitting Devices
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批准号:10650035
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.02万
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财政年份:1998
-
负责人:KAMATA Norihiko
-
依托单位:
Control of Emission Spectrum in Rare-Earth-Doped Glasses by Light Irradiation
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批准号:06805005
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.15万
-
财政年份:1994
-
负责人:KAMATA Norihiko
-
依托单位:
海外基金