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A Study of Magnetic Interaction Between Magnetic Layers in Laminated Films

层压薄膜中磁性层之间磁相互作用的研究

基本信息

批准号：
10650691
负责人：
KOHMOTO Osamu
金额：
$ 0.7万
依托单位：
OKAYAMA UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

项目摘要

Four types of the magnetic films has been studied.(1) Single-layer Ni Films : Dependencies of the saturation magnetization, coercive force remanence ratio and perpendicular magnetic anisotropy in sputtered Ni films on the film thickness (100 and 300 nm) and Ar pressure (3-50 mTorr) have been studied.(2) Single-layer Ni-O films prepared by sputtering in Ar+OィイD22ィエD2 atmosphere : Single phase NiO films are obtained below the oxygen partial pressure (OィイD22ィエD2/(Ar+OィイD22ィエD2)) of 9%. Lattice constant (a) and axis angle (α) of the Ni-O films have been studied. With increase in OィイD22ィエD2 pressure, the two values of a and α become close to those of the bulk. Saturation magnetization, coercive force, remanence ratio and electrical resistivity (ρ) has been studied. The NiO films are not stoichiometric composition. Oxygen deficient value (γ) in NiィイD21-γィエD2O decrease rapidly with annealing temperature. With decreasing γ, the electrical resistivity increases rapidly from 6x10ィイD1-1ィエD1 to 10ィイD14ィエD1 μΩcm.(3) Layered Ni/NiO films : Sifted MH loops are observed in bilayered films. With increase in NiO layer thickness, exchange field(HィイD2exィエD2) coercive force (HィイD2cィエD2) and magetoresistance (Δρ/ρ) increases. HィイD2exィエD2 increase with decrease in the Ni layer thickness. With increase in the NiO layer thickness, the Ni layer thickness at which the field of appearing HィイD2exィエD2 increases.(4) Layered Ni/Cu/Ni/NiO films : Shifted and asymmetrical MH loops have been observed. The latter indicated two ferromagnetic Ni layers have been surely separated by the Cu layer. HィイD2exィエD2 and HィイD2cィエD2 tend to increase with Cu layer thickness.

研究了四种类型的磁性薄膜。(1)单层Ni膜：研究了溅射Ni膜的饱和磁化强度、矫顽力剩磁比和垂直磁各向异性随膜厚（100和300 nm）和Ar气压（3-50 mTorr）的变化规律。(2)在Ar+O_（22）O_（22）O研究了Ni-O薄膜的晶格常数（α）和轴角（α）。随着O_（22）O_（研究了饱和磁化强度、矫顽力、剩磁比和电阻率。NiO薄膜不是化学计量组成。随着退火温度的升高，Ni_xO_（21）-γ_xO_（22）D_2O中的氧缺乏值（γ）迅速降低。随着γ的减小，电阻率从6 × 10 ~（-1）Ω·cm ~（-1）Ω·cm ~（-1）迅速增大到10 × 10 ~（-1）Ω·cm ~（-1）Ω·cm ~（-1）Ω·cm ~（-1）。(3)层状Ni/NiO薄膜：在双层薄膜中观察到筛状MH环。随着NiO层厚度的增加，交换场（H_xD_2 ex_xD_2）、矫顽力（H_xD_2c_xD_2）和磁电阻（Δρ/ρ）增加。随着Ni层厚度的减小，H_xD_2 ex_xD_2增大。随着NiO层厚度的增加，出现H场D2 ex H场D2的Ni层厚度增加。(4)层状Ni/Cu/Ni/NiO薄膜：观察到了移动的和不对称的MH环。后者表明两个铁磁Ni层确实被Cu层分开。随着Cu层厚度的增加，H D2 ex D2和H D2c D2趋于增加。