Photo-induced magnetic phase transition in spin crossover complexes
自旋交叉复合物中的光致磁相变
基本信息
- 批准号:11215202
- 负责人:
- 金额:$ 26.37万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research on Priority Areas (B)
- 财政年份:1999
- 资助国家:日本
- 起止时间:1999 至 2001
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Photowithching process between low- and high-spin states in is investigated in spin crossover materials, such as spin crossover complexes and semimagnetic semiconductors. The outline of the achieved results is shown as follows.(1) Photo-induced magnetic phase transition in spin crossover complexesDetails of the photo-induced magnetic phase transition in Fe^<2+> spin crossover complexes were investigated by measuring absorption spectrum and magnetic susceptibility. In the photoswithing process between low- and high-spin states, nonlinear characteristics such as thresholdlike behavior, incubation period, and phase separation have been observed. These results demonstrate that the cooperative intersystem crossing mediated by spin-lattice interaction plays a key role in driving process of a new class of nonequilibrium phenomena. In addition, it turned out that this photo-induced magnetic phase transition process was greatly influenced by an external magnetic field.(2) Photo-induced magnetic phase transition in semimagnetic semiconductorsTime-resolved Magneto-photoluminescence experiments were carried out in a semimagnetic semiconductor Cd _<0.9>Mn_<0.1>Te with varing exciton density. A reduction of the Zeeman shift and the binding energy of magnetic polaron is observed. The spectral feature is interpreted by the heating effect of manganese spins. Polarization dependence of the spin heating is observed for the first time, revealing the contribution of spin flip between excitons and magnetic ions to the heating process.
研究了自旋交叉材料(如自旋交叉配合物和半磁半导体)中低自旋态和高自旋态之间的光吸收过程。所取得的成果概要如下。(1)自旋交叉配合物的光诱导磁相变通过测量Fe^<2+>自旋交叉配合物的吸收光谱和磁化率来研究其光诱导磁相变的细节。在低自旋态和高自旋态之间的光转换过程中,观察到类阈值行为、潜伏期和相分离等非线性特性。这些结果表明,由自旋-晶格相互作用介导的协同系统间交叉在一类新的非平衡现象的驱动过程中起着关键作用。此外,还发现这种光致磁相变过程受外加磁场的影响很大。(2)半磁半导体的光致磁相变在不同激子密度的半磁半导体材料Cd <0.9>Mn_<0.1>Te上进行了时间分辨磁光致发光实验。观察到磁性极化子的塞曼位移和结合能的减小。光谱特征可以用锰自旋的热效应来解释。首次观察到自旋加热的极化依赖性,揭示了激子和磁离子之间的自旋翻转对加热过程的贡献。
项目成果
期刊论文数量(32)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
S.Koshihara, Y.Ogawa, T.Ishikawa, M.Takesada, A.Oiwa, H.Munekata, T.Komori, J.Yoshino: "Photo-induced phase transition in organic and inorganic materials"Current Applied Physics. 1. 21-27 (2001)
S.Koshihara、Y.Okawa、T.Ishikawa、M.Takesada、A.Oiwa、H.Munekata、T.Komori、J.Yoshino:“有机和无机材料中的光致相变”当前应用物理学。
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- 影响因子:0
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Y. Mitsumori. F. Minami: "Transient coherent emission from anisotropic semiconductors studied with phase-locked pulse pairs"J. Lumin.. 94-95. 663-666 (2001)
Y.三森。
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T.Kuroda, F.Minami, S.Seto: "Strong Excitation effect of exeitonie magnefic polarons in Cd1-xMnxTe"Phys.Stat.Sol.(b). 229. 757-760 (2002)
T.Kuroda、F.Minami、S.Seto:“Cd1-xMnxTe 中激发磁极化子的强激发效应”Phys.Stat.Sol.(b)。
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- 影响因子:0
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R.Shinohara,H.Akinaga,T.Kuroda,F.Minami: "Lifetime and Spin Relaxation Time Measurements of Micro-Fabricated GaAs Tips"Lifetime and Spin Relaxation Time Measurements of Micro-Fabricated GaAs Tips. 39. 7093-7096 (2000)
R.Shinohara、H.Akinaga、T.Kuroda、F.Minami:“微型制造的砷化镓尖端的寿命和自旋弛豫时间测量”微型制造的砷化镓尖端的寿命和自旋弛豫时间测量。
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- 影响因子:0
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T.Kuroda,Y.Yamauchi,F.Minami: "Spin beats of anisotropic excitons in GaSe"J.Luminescence. 87-89. 213-215 (2000)
T.Kuroda,Y.Yamauchi,F.Minami:“GaSe 中各向异性激子的自旋拍频”J.Luminescent。
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MINAMI Fujio其他文献
MINAMI Fujio的其他文献
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{{ truncateString('MINAMI Fujio', 18)}}的其他基金
Exciton Polarization in Semiconductor Quantum Dots studied byTip-Enhancement and Coherent Control Methods
通过尖端增强和相干控制方法研究半导体量子点中的激子偏振
- 批准号:
22340077 - 财政年份:2010
- 资助金额:
$ 26.37万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Optical processes in semiconductor quantum dots studied by nanooptics
通过纳米光学研究半导体量子点的光学过程
- 批准号:
19340079 - 财政年份:2007
- 资助金额:
$ 26.37万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Exciton Rabi oscillation in GaAs quantum dots
GaAs 量子点中的激子拉比振荡
- 批准号:
15340093 - 财政年份:2003
- 资助金额:
$ 26.37万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Coherent control of exciton transitions in single semiconductor quantum dot
单半导体量子点中激子跃迁的相干控制
- 批准号:
12440084 - 财政年份:2000
- 资助金额:
$ 26.37万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Coherent control of one-photon forbidden transitions in semiconductors
半导体中单光子禁戒跃迁的相干控制
- 批准号:
10440088 - 财政年份:1998
- 资助金额:
$ 26.37万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Design and Manufacture of a Solid State Laser with Tunable Range from 1.3mum to 1.6mum
可调范围1.3mum至1.6mum固体激光器的设计与制造
- 批准号:
05559007 - 财政年份:1993
- 资助金额:
$ 26.37万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
Femtosecond relaxation dynamics of excitons localized by disorder in semiconductors
半导体中无序局域激子的飞秒弛豫动力学
- 批准号:
63460021 - 财政年份:1988
- 资助金额:
$ 26.37万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Development of Classified Usage List of Basic Vocabulary for Teaching Japanese as a Foreign Language
日语作为外语教学基础词汇分类使用表的编制
- 批准号:
60450063 - 财政年份:1985
- 资助金额:
$ 26.37万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
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