Exciton Rabi oscillation in GaAs quantum dots
GaAs 量子点中的激子拉比振荡
基本信息
- 批准号:15340093
- 负责人:
- 金额:$ 10.69万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:2003
- 资助国家:日本
- 起止时间:2003 至 2004
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
We performed the photon echo experiment on GaAs quantum dots at 5K. The excitation light source was a fs Ti-Sapphire laser. The excitation photon energy was tuned to cover the lowest exciton in GaAs quantum dots. A dominant signal is observed at the zero time delay, which is due to photon echoes from the GaAs substrate and is unrelated to the quantum dots. For longer delays, we can observe a slowly decaying signal with a time constant of 〜1 ns. This signal is due to the dephasing of the exciton coherence in the quantum dots. Therefore, it can be concluded that the dephasing time of the exciton is extremely long (〜1 ns) in the quantum dots as compared to that in usual quantum wells (〜1ps).When changing the exciting pulse power, the signal intensity of the photon echo varys greatly. The echo intensity is found to oscilate as the excitation power increases. It can be understood that this oscillation is analogous to the Rabi oscillation, which is observed in resonantly driven two level systems. It is therefore considered that we observed the Rabi oscillation of the exciton in the quantum dots. It is noted that the Rabi oscillation can be observed under relatively low excitation power. Because the Rabi oscillation is an essential phenomenon to rotate q-bit, this result shows that the semiconductor quantum dots are promising as the logical circuit material of the quantum computing.
我们在 5K 下对 GaAs 量子点进行了光子回波实验。激发光源是飞秒钛蓝宝石激光器。调整激发光子能量以覆盖 GaAs 量子点中的最低激子。在零时间延迟处观察到主要信号,这是由于来自 GaAs 衬底的光子回波造成的,与量子点无关。对于较长的延迟,我们可以观察到时间常数为〜1 ns 的缓慢衰减信号。该信号是由于量子点中激子相干性的移相造成的。因此,可以得出结论,与普通量子阱中的激子相移时间(〜1ps)相比,量子点中激子的相相时间极长(〜1ns)。当改变激发脉冲功率时,光子回波的信号强度变化很大。发现回波强度随着激励功率的增加而振荡。可以理解,这种振荡类似于在谐振驱动的两能级系统中观察到的拉比振荡。因此,认为我们观察到了量子点中激子的拉比振荡。值得注意的是,在相对较低的激励功率下可以观察到拉比振荡。由于拉比振荡是旋转q位的基本现象,这一结果表明半导体量子点有望作为量子计算的逻辑电路材料。
项目成果
期刊论文数量(48)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Multi-wave-mixing of two-dimensional excitons in semiconductors
半导体中二维激子的多波混合
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:A.Hasegawa;T.Kishimoto;Y.Mitsumori;F.Minami
- 通讯作者:F.Minami
S.Sanguinetti, M.Gurioli, T.Kuroda, K.Watanabe, F.Minami: "Carrier relaxation in quantum dots without wetting layer"Physica E. 17. 91-93 (2003)
S.Sanguinetti、M.Gurioli、T.Kuroda、K.Watanabe、F.Minami:“没有润湿层的量子点中的载流子弛豫”Physica E. 17. 91-93 (2003)
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
A.Hasegawa, T.Kishimoto, Y.Mitsumori, M.Sasaki, F.Minami: "Temporal Behavior of Quantum Interfered Polarization between Two Excitons"Proc.26th Int.Conf.Semicond.Phys.. 44 (2003)
A.Hasekawa、T.Kishimoto、Y.Mitsumori、M.Sasaki、F.Minami:“两个激子之间量子干涉偏振的时间行为”Proc.26th Int.Conf.Semicond.Phys.. 44 (2003)
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Phonon bottleneck effects in InAs/GaInP quantum dots
InAs/GaInP 量子点中的声子瓶颈效应
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:K.Ikeda;H.Sekiguchi;F.Minami;J.Yoshino;S.Nagao
- 通讯作者:S.Nagao
Y.Mitsumori, A.Oiwa, F.Minami, H.Munekata: "Dynamics of photoinduced magnetization rotation in ferromagnetic semiconductor p-(Ga, Mn)As"Physical Review B. 69. 033203 (2004)
Y.Mitsumori、A.Oiwa、F.Minami、H.Munekata:“铁磁半导体 p-(Ga, Mn)As 中光致磁化旋转的动力学”物理评论 B. 69. 033203 (2004)
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
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MINAMI Fujio其他文献
MINAMI Fujio的其他文献
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{{ truncateString('MINAMI Fujio', 18)}}的其他基金
Exciton Polarization in Semiconductor Quantum Dots studied byTip-Enhancement and Coherent Control Methods
通过尖端增强和相干控制方法研究半导体量子点中的激子偏振
- 批准号:
22340077 - 财政年份:2010
- 资助金额:
$ 10.69万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Optical processes in semiconductor quantum dots studied by nanooptics
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- 批准号:
19340079 - 财政年份:2007
- 资助金额:
$ 10.69万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Coherent control of exciton transitions in single semiconductor quantum dot
单半导体量子点中激子跃迁的相干控制
- 批准号:
12440084 - 财政年份:2000
- 资助金额:
$ 10.69万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Photo-induced magnetic phase transition in spin crossover complexes
自旋交叉复合物中的光致磁相变
- 批准号:
11215202 - 财政年份:1999
- 资助金额:
$ 10.69万 - 项目类别:
Grant-in-Aid for Scientific Research on Priority Areas (B)
Coherent control of one-photon forbidden transitions in semiconductors
半导体中单光子禁戒跃迁的相干控制
- 批准号:
10440088 - 财政年份:1998
- 资助金额:
$ 10.69万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Design and Manufacture of a Solid State Laser with Tunable Range from 1.3mum to 1.6mum
可调范围1.3mum至1.6mum固体激光器的设计与制造
- 批准号:
05559007 - 财政年份:1993
- 资助金额:
$ 10.69万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
Femtosecond relaxation dynamics of excitons localized by disorder in semiconductors
半导体中无序局域激子的飞秒弛豫动力学
- 批准号:
63460021 - 财政年份:1988
- 资助金额:
$ 10.69万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Development of Classified Usage List of Basic Vocabulary for Teaching Japanese as a Foreign Language
日语作为外语教学基础词汇分类使用表的编制
- 批准号:
60450063 - 财政年份:1985
- 资助金额:
$ 10.69万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
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