Exciton Polarization in Semiconductor Quantum Dots studied byTip-Enhancement and Coherent Control Methods

我们利用针尖增强效应研究了各种半导体超结构的发光过程，并在一根Ge纳米线上进行了针尖增强拉曼散射测量。我们观察到了声子限制效应，估算了Ge非晶壳的厚度，并对GaAs量子点进行了相干控制实验。结果表明，激子的功率展宽过程受锁相脉冲的延迟时间控制。

We studied the luminescence processes of various semiconductor super-structures by using tip-enhanced effects.Tip-enhanced Raman scattering measurements were performed on a single Ge nano-wire. We observed the phonon confinement effect and estimated the Ge amorphous shell thickness.We performed the coherent control experiments on GaAs quantum dots. It is shown that the power-broadening process of excitons is controlled by the delay time of phase-locked pulses.