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Study on structural fluctuations in amorphous semiconductors by micro-light scattering

Study on structural fluctuations in amorphous semiconductors by micro-light scattering
微光散射研究非晶半导体结构涨落
批准号:
11640317
负责人:
INOUE Koichi
金额:
$0.64万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2000

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中文摘要
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英文摘要
While long-range order is lacked in amorphous semiconductors, short-range order such as bond-length and bond-angles are conserved. Between the two scale of order, the medium-range order in a few 10 nm scale is important. For example, photo-induced crystallization of amorphous materials does not occur immediately at the irradiation, but it proceed after some ratent period under the irradiation. Perhaps some ordering states are developed during the ratent period, and there are large fluctuations in the amorphous states. The aim of this research is to clarify local character of amorhous semiconductors, such as the medium-range fluctuations, and fractal structures in the photo-induced crystallization process. In this year experimental setup has been made, and the measurement has been done preliminarly. As the result, it is difficult to observe amorphous fluctuations by Leyrey-scattering using micro-optics. One reason may be that the relating electronic state is spread wider than spacial range of fluctuations. We have rearranged the optical system for Raman scattering measurement with a liquid He cryostat to study the network vibrations in the amorphous states at low temperatures.
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会议论文
T.Nakaoka, Y.Wang, K.Murase, O.Matsuda, and K.Inoue: "Resonant Raman scattering in crystalline GeSe_2"Physical Review B. 61. 15569-15572 (2000)
T.Nakaoka、Y.Wang、K.Murase、O.Matsuda 和 K.Inoue:“晶体 GeSe_2 中的共振拉曼散射”物理评论 B. 61. 15569-15572 (2000)
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