Research in the electronic structure of MnSi/Si interface by soft X-ray emission spectroscopy and inverse resonant photoelectron spectroscopy

软X射线发射光谱和反共振光电子能谱研究MnSi/Si界面的电子结构

• 批准号: 11650003
• 负责人: NAKAI Shun-ichi
• 金额: $ 2.37万
• 依托单位: Utsunomiya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650003/
• 关键词: Soft X-ray emission spectra; inverse photoelectron; MnSi; Si interface; interface electronic structure; surface and interface; シリサイド; シリコン界面; 逆光電子スペクトル; X線電子スペクトル; X線光電子スペクトル

Recent development of electronic devices has been made in the field of interface such as MnSi/Si layer. In order to study the electronic properties of MnSi/Si interface, we have noticed the soft X-ray emission spectroscopy and the resonant inverse photoelectron spectroscopy.At first, we have measured the Si-K_β emission spectra of Si single crystal. The K_β emission spectrum is induced by the Si 3p valence band to the Si 2p core hole transition. Measurements were carried out by electron excitation method and by changing the X-ray take-off angle (θ_t) from sample surface. When at θ_t = 2 °, SiK_β spectrum represents the Si 3p valence band structure of bulk Si. On the other hand, at θ_t = 0.5 °, which corresponds to the total reflection angle θ_c (critical angle) of X-rays, the Si-K_β spectrum shows the electronic structure of surface oxidized Si, i.e. SiO_2. Where θ_t is between above angles, at θ_t = 1 ° and, 1.5 °, the K_β spectra show the electronic structures of SiO_2/Si interface and the valence band Si3p peak shifts systematically to the lower energy. This peak shift may be understood by the band offset model of semiconductor heterojunction.Next, we observed the Si-K_β spectra and the Mn L_α spectra from MnSi/Si system by changing the take-off angel θ_t.

电子器件的最新发展已经在诸如MnSi/Si层的界面领域中取得。为了研究MnSi/Si界面的电子性质，我们采用了软X射线发射谱和共振逆光电子能谱。K_β发射谱是由Si的3 p价带到Si的2 p芯空穴跃迁引起的。用电子激发法和改变X射线从样品表面的出射角θ t进行测量。当θ t = 2 °时，SiK β谱代表体Si的3 p价带结构。在θ t = 0.5 °处，即X射线的全反射角θ c（临界角），Si-K β谱显示了表面氧化Si的电子结构，即SiO_2。当θ t介于上述两个角度之间时，当θ t = 1 ° ~ 1.5 °时，K_β谱显示SiO_2/Si界面的电子结构，价带Si 3 p峰系统地向低能移动。然后，我们通过改变MnSi/Si系统的引出角θ_t，观察到了Si-K_β谱和MnL_α谱。

项目成果

S.Nakai, et al.: "Resonant emission spectra of YF_3, YCL_3, Y_2O_2 and Y-metal in the YL_<III> absorption region"Phys.Rev.B. B61・11. 7433-7439 (2000)

S.Nakai等人：“YL_<III>吸收区域中的YF_3、YCL_3、Y_2O_2和Y-金属的共振发射光谱”Phys.Rev.B61·11（2000）。

S.Nakai, et al.: "Resonant emission spectra of YF_3, YCl_3, Y_2O_2 and Y-metal in the Yl_m absorption region"Phys. Rev. B. B61・11. 7433-7439 (2000)

S.Nakai等人：“YF_3、YCl_3、Y_2O_2和Y-金属在Yl_m吸收区域的共振发射光谱”PhysRev.B.B61·11(2000)。

T.Kashiwakura, et al: "Electronic Structures of CeNi_2Al_5 and CeNiAl_4 Studied by Photoelectron Spectroscopy"J.Phys.Soc.Jpn.. 69・9. 3095-3099 (2000)

T.Kashiwakura等：“通过光电子能谱研究CeNi_2Al_5和CeNiAl_4的电子结构”J.Phys.Soc.Jpn.. 69・9(2000)。

S. Nakai et.al.: "Resonant L_α X-Ray Raman Scattering Spectra of CeF_3, CeO_2 and CeB_6"Surface Review and Letters. (2002)

S. Nakai 等人：“CeF_3、CeO_2 和 CeB_6 的共振 L_α X 射线拉曼散射光谱”表面评论和快报 (2002)。

S.Nakai, et al.: "Coniparison between resonant L_α emiassion spectra and resonant LMM Auger spectra of Yttrium compounds"J. Synchrotron Rad.. 8・2. 401-403 (2001)

S. Nakai 等：“钇化合物的共振 L_α 发射光谱与共振 LMM 俄歇光谱的比较” J. Synchrotron Rad.. 8・2 (2001)。