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Negative-resistance device having multi-barrier structures using low molecule-dye-doped polymer

使用低分子染料掺杂聚合物的具有多势垒结构的负电阻器件

基本信息

批准号：
11650364
负责人：
KAWAMOTO Akira
金额：
$ 1.66万
依托单位：
Fukui National College of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650364/
关键词：
Negative-resistance tunnel effect interface-tunneling mode Bulk-dominant model taolvmer organic dve dispersedstate of dye molecules element mapping 元素マッピング界面律速モデルエネルギー帯構造有機色素のドーピングトンネリング PVK PPX 陽極界面の絶縁層大気中UPS 負性抵抗素子 /

项目摘要

Possible models for the origin of negative-resistance in negative-resistance device having multi-barrier structures using low molecule-dye-doped polymer are as follows. One is the interface-tunneling model- based on the tunneling between electrode and dye molecules. Another model is bulk-dominant model-based on the intermolecular tunneling. In this paper, the origin of the negative-resistance was discussed, on the basis of possible models and the UV irradiative effect on polymer-matrices.The interface-tunneling model was studied with model sample (anode/insulating layer/dye molecular layer/cathode).The results are summarized as follows. The peak current decrease, but peak voltage increases as the tunneling barrier width increases. The peak to valley (p/v) ratio decreases as the tunneling barrier is lowered. The peak current decreases as the well width increase.On the other hand, the bulk dominant model was studied using Energy Filter Traverse Electron Microscope (EFTEM). In order to cl … More arify the dispersed state of dye molecules in polymer, the element mapping in bulk was observed using EFTEM from direction across the interface between electrode and bulk. The results are as follows.Clusters were formed by the electron or hole transporting dyes in bulk. Each clusters were 2〜25 nm distance, short distance that enable carriers to tunnel. This suggests that conductive path is not formed in between clusters and EFTEM is an effective method to estimate a state of low molecule dispersed in polymer.The Fermi level of PVK became higher with UV irradiation. This change is considered to be due to the formation of trap level due to oxidation. The density of states in valence band increases with UV irradiation. The Fermi level of PVK and PVP became lower with heat treatment in vacuum.These suggest that electron or hole tunnel intermolecular of dyes in bulk, but the insulating layer at electrode interface dominates the negative-resistance characteristics and electronic states of polymers are changed by UV irradiation. It seems that this study contributed to the solution of the mechanism of the negative-resistance in negative-resistance device. Less

使用低分子染料掺杂聚合物的具有多势垒结构的负电阻器件中负电阻起源的可能模型如下。一种是界面隧道模型——基于电极和染料分子之间的隧道。另一种模型是基于分子间隧道效应的体积主导模型。本文在可能的模型和紫外辐射对聚合物基体的影响的基础上，讨论了负电阻的起源。用模型样品（阳极/绝缘层/染料分子层/阴极）研究了界面隧道模型。结果总结如下。随着隧道势垒宽度的增加，峰值电流减小，但峰值电压增加。随着隧道势垒的降低，峰谷 (p/v) 比降低。峰值电流随着井宽的增加而减小。另一方面，利用能量过滤横移电子显微镜(EFTEM)研究了体主导模型。为了明确聚合物中染料分子的分散状态，使用 EFTEM 从穿过电极和本体之间界面的方向观察本体中的元素映射。结果如下。团簇是由电子或空穴传输染料大量形成的。每个簇的距离为2〜25 nm，短距离使得载流子能够隧道。这表明团簇之间没有形成导电路径，EFTEM 是估计聚合物中分散的低分子状态的有效方法。PVK 的费米能级随着 UV 照射而变高。这种变化被认为是由于氧化而形成陷阱能级所致。价带中的态密度随着紫外线照射而增加。随着真空热处理，PVK和PVP的费米能级降低。这表明电子或空穴在染料的分子间隧道传输，但电极界面的绝缘层主导了负阻特性，并且聚合物的电子态在紫外照射下发生了改变。看来这项研究有助于解决负电阻器件中负电阻的机理。较少的