Clarification of Interfacial Levels of Insulating Polymeric Composite and Establishment of Its Control Method

绝缘高分子复合材料界面层的澄清及其控制方法的建立

基本信息

  • 批准号:
    05650320
  • 负责人:
  • 金额:
    $ 0.83万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
  • 财政年份:
    1993
  • 资助国家:
    日本
  • 起止时间:
    1993 至 1994
  • 项目状态:
    已结题

项目摘要

As the charge-exchange rate at the insulator-insulato interface in insulating composetes is affected by the direction of the carrier transport and carrier species, but these have not yet been fully understood. Photocurrens on a PS (polystirene)-PMMA (polmethyl-methacrylate) twolayr composite were measured in order to clarify the carrier injection and the charge-exchange processes at the interface. It was found that electrons from the PMMA can pass the interface more easily than holes from the PMMA layr and holes from the PS layr can pass the interface more easily than electrons from the PS layr. These suggest that charge-exchange process can be explained by the Molecular Ion States Model. On the other hand, PS/PMMA contact charging experiments suggested that the donor and acceptor levels contribute to both contact charging and electronic charge transport at the interface.Photoinjection currents in PS and PMMA were measured in order to clarify the correlation of conduction levels in polymers with the charge-exchange processes at the interface. The analysis of the optical absorption spectra PS and the photoinjection of holes from the metal into the PS gave the contact barrier height (Au-PS-Au), donor level for hole transport and acceptor level for electron transport as 1.98 eV,and 2.4 eV respectively. These results of conduction levels coincided well with the results of the contact charge-exchange experiments between various metals and PS.On the other hand, a detailed study of the photoinjention of electrons into the PMMA determined the contact barrier height (Al-PMMA-Al), donor and acceptor levels for carrier transport as 0.29 eV,5.08 eV and 3.20 ev respectively. These results did not coincide well with the results of the contact charge-exchange experiments.These suggest that the anisotropy of electronic charge transoprt at the intrface in PS-PMMA composite can be explained by the donor and acceptor levels contributing to carrier transport in PS and PMMA.
由于绝缘复合材料中绝缘体-绝缘体界面的电荷交换速率受载流子输运方向和载流子种类的影响,但这些影响还没有完全被理解。测量了PS(聚苯乙烯)-PMMA(聚甲基丙烯酸甲酯)双层复合材料上的光电流,以阐明界面上的载流子注入和电荷交换过程。发现来自PMMA层的电子比来自PMMA层的空穴更容易通过界面,来自PS层的空穴比来自PS层的电子更容易通过界面。这表明电荷交换过程可以用分子离子状态模型来解释。另一方面,PS/PMMA接触电荷实验表明,施主和受主能级对界面上的接触电荷和电子电荷传输都有贡献。为了阐明聚合物中电导能级与界面电荷交换过程之间的关系,测量了PS和PMMA中的光注入电流。光吸收光谱PS和光注入金属空穴的分析结果表明,接触势垒高度(Au-PS-Au)为1.98 eV,空穴传输的施主能级为2.4 eV,电子传输的受主能级为2.4 eV。这些电导能级的结果与不同金属与PS之间的接触电荷交换实验结果很好地吻合。另一方面,对电子注入PMMA的详细研究确定了载流子传输的接触势垒高度(Al-PMMA-Al)、施主能级和受主能级分别为0.29 eV、5.08 eV和3.20 eV。这些结果与接触电荷交换实验的结果并不一致,这表明PS-PMMA复合材料界面电子电荷传输的各向异性可以用PS和PMMA中对载流子传输起作用的施主和受主能级来解释。

项目成果

期刊论文数量(34)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
川本昴: "絶縁体-絶縁体界面の電荷交換過程の検討 I" 平成5年電気学会全国大会講演論文集. 3‐160 (1993)
Subaru Kawamoto:“绝缘体-绝缘体界面电荷交换过程的研究 I”1993 年日本电气工程师学会全国会议记录 3-160 (1993)。
  • DOI:
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    0
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A.Kawamoto: ""Photoinjection Currents in Polymers and Electronic Charge-Exchange at the Interface in Insulating Composites"" Proceedings of 1995 ISEIM H5. (1995)
A.Kawamoto:“聚合物中的光注入电流和绝缘复合材料界面处的电子电荷交换”1995 ISEIM H5 论文集。
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    0
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Akira Kawamoto: "Photoinjection Currents in Polymers and Electronic Charge-Exchange at the Interface in Insulating Composites" 1995 International Symposium on Electrical Insulating Materials. H2 (1995)
Akira Kawamoto:“聚合物中的光注入电流和绝缘复合材料界面处的电子电荷交换”1995 年国际电绝缘材料研讨会。
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    0
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川本昂: "PMMAの光注入電流と電子レベル" 平成7年度電気学会全国大会講演論文集. 2-33 (1995)
Ko Kawamoto:“PMMA 中的光注入电流和电子水平”1995 年日本电气工程师学会全国会议记录 2-33 (1995)。
  • DOI:
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  • 影响因子:
    0
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川本昴: "PMMAの光注入電流と電子レベル" 平成7年電気学会全国大会講演論文集. 170 (1994)
Subaru Kawamoto:“PMMA 中的光注入电流和电子水平”1995 年日本电气工程师学会全国会议记录 170 (1994)。
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    0
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KAWAMOTO Akira其他文献

KAWAMOTO Akira的其他文献

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{{ truncateString('KAWAMOTO Akira', 18)}}的其他基金

Development of Paste-free Brain Wave Electrode using Nanocarbon
使用纳米碳开发无膏脑电波电极
  • 批准号:
    23651151
  • 财政年份:
    2011
  • 资助金额:
    $ 0.83万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Negative-resistance device having multi-barrier structures using low molecule-dye-doped polymer
使用低分子染料掺杂聚合物的具有多势垒结构的负电阻器件
  • 批准号:
    11650364
  • 财政年份:
    1999
  • 资助金额:
    $ 0.83万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Study on transport mechanism of carriers that go across the contact interface in insulating composite
绝缘复合材料中载流子穿过接触界面的输运机理研究
  • 批准号:
    08650395
  • 财政年份:
    1996
  • 资助金额:
    $ 0.83万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Clarification of electronic properties of polymer-inorganic material interface and development of insulating composite materials for higher fields
阐明高分子-无机材料界面的电子特性及开发更高领域的绝缘复合材料
  • 批准号:
    02650209
  • 财政年份:
    1990
  • 资助金额:
    $ 0.83万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)

相似海外基金

Establishment of photocarrier injection method by which electronic properties of strongly correlated materials can be controlled.
建立可控制强相关材料电子特性的光载流子注入方法。
  • 批准号:
    23540410
  • 财政年份:
    2011
  • 资助金额:
    $ 0.83万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Control of physical properties by means of photocarrier injection
通过光载流子注入控制物理性能
  • 批准号:
    20540356
  • 财政年份:
    2008
  • 资助金额:
    $ 0.83万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
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