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Unique optical and electrical properties of silicon-containing heteronanocluster which has three dimensional superlattice structure

具有三维超晶格结构的含硅异质纳米团簇独特的光学和电学性质

基本信息

批准号：
11650917
负责人：
WATANABE Akira
金额：
$ 1.86万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

项目摘要

The novel synthesis and the electrical and optical properties of Si and Ge nanoclusters which have nanometer sized core and organic side chains have been studied. Such clusters are soluble in common organic solvents due to the organic side chains and show semiconducting properties due to the Si and Ge lattices of the nanoclusters. The studies of the new materials designed from the organo-silicon and germanium nanoclusters using a basic unit. The quantum size effect of the organo-silicon and germanium nanoclusters and the formation of Si/Ge heterojunction between Si and Ge nanoclusters are investigated. After the formation of Si and Ge core dispersed in THF, an alkylbromide was added to substituted the SiMgCl and GeMgCl, respectively. The formation of Si-Si, Si-Ge, and Ge-Ge bonds by copolymerization were observed by Raman spectroscopy. By the time-resolved emission spectroscopy, significant quantum size effects were observed in the measurements of emission maxima and emission lifetimes. The organo-silicon and germanium cluster showed a broad emission bands in visible region. The origin of the emission band was discussed based on the time-resolved emission spectra and molecular orbital calculations. The distorted excited state formed around the branching point was assigned as the emission site and the origin the large stokes shift. The decay analysis suggests the energy migration in the Si/Ge nanocluster. The thin film of the organo-silicon and germanium clusters were prepared by spin-coating technique. By heat treatment, plasma irradiation, laser annealing, and so on, the organo-silicon and germanium cluster films can be converted to inorganic Si and Ge films, respectively. Such a technique provides the formation of c-Si, c-Ge, and c-Si/Ge films by coating.

本文研究了具有纳米尺寸核和有机侧链的硅、锗纳米团簇的新颖合成方法及其光电性质。这种簇由于有机侧链而可溶于普通有机溶剂，并且由于纳米簇的Si和Ge晶格而显示半导体性质。有机硅锗奈米团簇以基本单元设计新材料之研究。研究了有机硅和锗纳米团簇的量子尺寸效应以及硅和锗纳米团簇之间硅/锗异质结的形成。在形成分散在THF中的Si和Ge核之后，添加烷基溴以分别取代SiMgCl和GeMgCl。通过拉曼光谱观察到共聚反应中Si-Si、Si-Ge和Ge-Ge键的形成。通过时间分辨发射光谱，在发射峰和发射寿命的测量中观察到了显著的量子尺寸效应。有机硅锗团簇在可见光区有较宽的发射带。根据时间分辨发射光谱和分子轨道计算，讨论了发射带的来源。在分支点附近形成的畸变激发态被认为是发射位置，大的斯托克斯位移是其起源。衰变分析表明Si/Ge纳米团簇中存在能量迁移。采用旋涂法制备了有机硅锗团簇薄膜。通过热处理、等离子体辐照、激光退火等方法，可以将有机硅和锗团簇薄膜分别转化为无机硅和锗薄膜。这种技术通过涂覆提供了c-Si、c-Ge和c-Si/Ge膜的形成。