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Unique optical and electrical properties of silicon-containing heteronanocluster which has three dimensional superlattice structure

Unique optical and electrical properties of silicon-containing heteronanocluster which has three dimensional superlattice structure
具有三维超晶格结构的含硅异质纳米团簇独特的光学和电学性质
批准号:
11650917
负责人:
WATANABE Akira
金额:
$1.86万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2000

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中文摘要
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英文摘要
The novel synthesis and the electrical and optical properties of Si and Ge nanoclusters which have nanometer sized core and organic side chains have been studied. Such clusters are soluble in common organic solvents due to the organic side chains and show semiconducting properties due to the Si and Ge lattices of the nanoclusters. The studies of the new materials designed from the organo-silicon and germanium nanoclusters using a basic unit. The quantum size effect of the organo-silicon and germanium nanoclusters and the formation of Si/Ge heterojunction between Si and Ge nanoclusters are investigated. After the formation of Si and Ge core dispersed in THF, an alkylbromide was added to substituted the SiMgCl and GeMgCl, respectively. The formation of Si-Si, Si-Ge, and Ge-Ge bonds by copolymerization were observed by Raman spectroscopy. By the time-resolved emission spectroscopy, significant quantum size effects were observed in the measurements of emission maxima and emission lifetimes. The organo-silicon and germanium cluster showed a broad emission bands in visible region. The origin of the emission band was discussed based on the time-resolved emission spectra and molecular orbital calculations. The distorted excited state formed around the branching point was assigned as the emission site and the origin the large stokes shift. The decay analysis suggests the energy migration in the Si/Ge nanocluster. The thin film of the organo-silicon and germanium clusters were prepared by spin-coating technique. By heat treatment, plasma irradiation, laser annealing, and so on, the organo-silicon and germanium cluster films can be converted to inorganic Si and Ge films, respectively. Such a technique provides the formation of c-Si, c-Ge, and c-Si/Ge films by coating.
期刊论文(13)
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A.Watanabe, M.Unno, F.Hojo, and T.Miwa: "Effect of Hydrogen Plasma Treatment on Formation of Amorphous Silicon Film Using Oragnosoluble Silicon Cluster as a Precursor"Jpn.J.Appl.Phys.. 30. L961-L963 (2000)
A.Watanabe、M.Unno、F.Hojo 和 T.Miwa:“氢等离子体处理对使用有机可溶性硅簇作为前体形成非晶硅膜的影响”Jpn.J.Appl.Phys.. 30. L961-
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发表时间:
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作者: []
通讯作者:
Akira Watanabe: "Micropatterning of SiO_2 Film using Organosilicon Nanocluster as a Precursor"Thin Solid Film. 354. 13-18 (1999)
Akira Watanabe:“使用有机硅纳米团簇作为前体的 SiO_2 薄膜微图案化”固体薄膜。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
Akira Watanabe: "Effect of Hydrogen Plasma Treatment on Formation of Amorphous Silicon Film Using Oragnosoluble Silicon Cluster as a Precursor"Jpn.J.Appl.Phys.. 39. L961-L963 (2000)
Akira Watanabe:“氢等离子体处理对使用有机可溶性硅簇作为前体形成非晶硅膜的影响”Jpn.J.Appl.Phys.. 39. L961-L963 (2000)
DOI: --
发表时间:
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影响因子: --
作者: []
通讯作者:
A.Watanabe, M.Unno, F.Hojo, and T.Miwa: "Germanium Thin Film by Coating Technique using a Soluble Organogermanium Cluster as a Precursor"J.Materials Sci., Lett. (in press). (2001)
A.Watanabe、M.Unno、F.Hojo 和 T.Miwa:“使用可溶性有机锗簇作为前体通过涂层技术形成锗薄膜”J.Materials Sci.,Lett。
DOI: --
发表时间:
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作者: []
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