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Development of Spin Tunnel Magnetoresistive Read Head

Development of Spin Tunnel Magnetoresistive Read Head
自旋隧道磁阻读取头的研制
批准号:
11792002
负责人:
MIYAZAKI Terunobu
金额:
$6.27万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for University and Society Collaboration
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2001

项目摘要

项目成果

MIYAZAKI Terunobu的其他基金

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中文摘要
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英文摘要
Spin tunnel junction is one of the potential candidate for highly sensitive magnetic read head. However, in practical use, there are some difficulties to be overcome : large noise, low data transfer rate, and difficulty in applying magnetic bias fields. The first and the second problerns are due to large junction resistance and the third one is due to the characteristic junction geometry which is much different from metallic GMR head geometry. In this research project, the research group in Graduate School of Engineering, Tohoku university, together with the group in SONY Corporation have made experimental research to overcome these difficulties.The Tohoku University group engaged in the fabrication of low tunnel resistance junctions by thinning insulating films in the junctions. Local transport properties of the insulating layers were examined using conductive atomic force microscopy (c-AFM). It has been concluded that the insulating layers less than 0.8 nm contain defects, which caus … More e the reduction of tunnel magnetoresistance (TMR) ratios. It has been also made clear that oxygen content in the insulating layer becomes homogeneous in the annealing process, resulted in the increase of the TMR ratios. In order to reduce the number of defects in the insulating layer, various kinds of materials were investigated as buffer layers. In conclusion, a low resistance value (about 80 Ω・um^2) and a high TMR (30%) were obtained using Cu buffer layer and 0.6 nm thick Al in the insulating layer. In case of Ni-Fe buffer layer, it is possible to reduce the resistance further keeping high TMR ratios.The SONY group engaged in the development of read head design for the spin tunnel junctions. Flux guide was adopted in the head to avoid the mechanical damage on the junction and also to increase the junction area. The permanent magnet bias method, which is commonly used in GMR read head, causes electrical short circuiting in spin tunnel magnetoresistive read head. Therefore, a long range exchange coupling biasing scheme was employed to apply a bias field to the flux-guide. The reading performance of a test head was measured in a stationary head/metal tape configuration using helical scanning system. The output signal increased up to 1.75 mV_<p-p>, which was corresponding to +2.4 dB output of a conventional read head. In conclusion it has been demonstrated that the flux-guide type structure combined with a long-range exchange bias method is feasible for spin tunnel magnetoresistive read head. Less
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会议论文
Y. Ando, et al.: "ANALYSIS OF THE INTERLAYER IN FERROMAGNET/INSULATOR JUNCTIONS BY INELASTIC-ELECTRON-TUNNELING-SPECTROSCOPY"Journal of Magnetism and Magnetic Materials. 198-199. 161-163 (1999)
Y. Ando 等人:“通过非弹性电子隧道光谱分析铁磁体/绝缘体结中的夹层”磁学和磁性材料杂志。
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通讯作者:
Y.Ando: "Local Transport Property on Ferromagnetic Tunnel Junction Measured Using Conductiong Atomic Force Microscope"Japanese Journal of Applied Physics. 38. L737-L739 (1999)
Y.Ando:“使用传导原子力显微镜测量铁磁隧道结的局域输运特性”日本应用物理学杂志。
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通讯作者:
Eiji Nakashio: "Longitudinal bias method using a long distance exchange coupling field in TMR junction"Journal of Applied Physics. 89. 7356-7358 (2001)
Eiji Nakashio:“在 TMR 结中使用长距离交换耦合场的纵向偏置方法”应用物理学杂志。
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100
    Fabrication of perpendicular magnetized tunnel junction and magnetization reversal by spin injection
    • 批准号:
      21246001
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $30.53万
    • 财政年份:
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    • 负责人:
      MIYAZAKI Terunobu
    • 依托单位:
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    • 批准号:
      17206001
    • 项目类别:
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    • 资助金额:
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    • 财政年份:
      2005
    • 负责人:
      MIYAZAKI Terunobu
    • 依托单位:
    Spin injection into high quality small magnetic tunnel junctions
    • 批准号:
      13305001
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $35.78万
    • 财政年份:
      2001
    • 负责人:
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    • 依托单位:
    Fabrication process for hybrid magnetic material and fabrication of tunnel magnetoresistive read head
    • 批准号:
      11355001
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $23.44万
    • 财政年份:
      1999
    • 负责人:
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    • 依托单位: