Nanoscale Magnetism and Transport

The Investigation of the stacking structure and the fabrication process of tunnel junctions were carried out。The tunnel magnetoresistance （TMR） ratio and the resistance obtained were 49%， 3 kΩμmイD12イエD1and 30%， 300ΩμmイD12イエD1。These results Contribute to the application of TMR effect on magnetic random access memories （MRAM） and magnetic reading heads。此外，使用导电原子力显微镜（AFM）的局部传输特性对TMR接头的分析方法已被证实。（Miyazaki）按顺序调查磁性电线微制造的局部磁性、对电阻和几个点的反向电压的模拟测量已经找到了有效的方法。大多数非典型行为报告的以局部磁的连续或不连续的旋转的动态磁解释。此外，发现了一种块状铁磁网的耐药性的异常温度依赖性。（Sato）由单电造成的高强度楼梯 ... More 在隧道里，它被用来制作金属-非金属大的薄电影。在房间温度下使用扫描隧道显微镜（STM）。而且，消极的抵抗力是什么？在同一时间段内发现了一个回旋楼梯，这被认为是由旋转累积效应引起的。（Takanashi）在铁磁/超导体/铁磁双接头中，自旋被吸收到两种铁磁对齐的反阵列中的超导体中，因此，超导体状态被发现可以由应用电压控制。这必须是磁性和超导体效应之间相互作用的新概念。（Maekawa）“铁/铬的清晰界面”是通过使用Pb表面作用来控制原子秩序的增长。具有Pb活性剂的铁/铬金属多层的巨型磁共振（GMR）比没有Pb活性剂的铅活性剂大两次。本结果实验表明，接口结构是GMR比率的一个重要因素，而接口的自旋依赖散射是GMR （Yamamoto）的主要起源，以实现铁氧体的自旋极化，磁耦合振荡现象的一个铁磁单电子晶体管（SET）已使用。Al/Ni/Al-SET中镍的自旋极化是负的，与结果形式的波段计算相对应。哇，绝对的价值太小了。Less（低）

The investigation of the stacking structure and the fabrication process of tunnel junctions were carried out. The tunnel magnetoresistance (TMR) ratio and the resistance obtained were 49%, 3 kΩμmィイD12ィエD1 and 30%, 300ΩμmィイD12ィエD1. These results contribute to the application of TMR effect on magnetic random access memories (MRAM) and magnetic reading heads. Also, the analysis method of TMR junctions by local transport properties using conductive atomic force microscope (AFM) was established. (Miyazaki)In order to investigate the local magnetization of magnetic wires microfabricated, the simultaneous measurement of a resistance and a transverse voltage at several points was found to be effective. Most of anomalous behaviors reported were explained by anisotropic magnetoresistance with the continuous or discontinuous rotation of local magnetizations. Also, anomalous temperature dependence of a resistance for a bulk ferromagnet was found. (Sato)The Coulomb staircase caused by single electr … More on tunneling was observed for metal-nonmetal granular thin films. using by scanning tunneling microscope (STM) at room temperature. And also, the negative resistance which was. observed at the same period of the Coulomb staircase was found. This was suggested to be occurred by the spin accumulation effect. (Takanashi)In ferromagnet/superconductor/ferromagnet double junctions, spins were accumulated into the superconductor at the magnetizations of both ferromagnets aligned antiparallel, so that the super-conducting state was found to be controlled by applying voltages. This must be the new concept of the interaction between magnetism and superconducting effect. (Maekawa)The sharp interface of Fe/Cr was fabricated successfully by controlling the atomic order growth using Pb surfactant. The giant magnetoresistance (GMR) of Fe/Cr metallic multilayers with Pb surfactant was two times larger than that without Pb surfactant. This result showed experimentally that the interface structure was an important factor for the magnitude of GMR ratio and that the spin dependent scattering at the interface was a main origin of GMR (Yamamoto)In order to obtain the spin polarization of ferromagnets, magneto Coulomb oscillation phenomenon of a ferromagnetic single electron transistor (SET) was used. The polarity of spin polarization of Ni obtained for Al/Ni/Al-SET was negative, which corresponded to the result form band calculations. However, the absolute value was too small. Less