Fabrication process for hybrid magnetic material and fabrication of tunnel magnetoresistive read head
Fabrication process for hybrid magnetic material and fabrication of tunnel magnetoresistive read head
批准号:
11355001
负责人:
MIYAZAKI Terunobu
金额:
$23.44万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2001
中文摘要
In order to fabricate a read head using tunnel magnetoresistive junction,optimization of the tunnel junction(layered structure,stacking sequence,optimal annealing condition,thickness of barrier layer)and micro-fabricating process have been studied。Two kinds of read head were successfully demonstrated.The main results are summarized as follows.1。The Ta30()/Ni_<;80>;Fe_<;20>;(30)/Cu(200)/IrMn(100)CoFe(40)/Al-oxide/CoFe(40)/Ni_<;80>;Fe_<;20>;(200)/Ta(50)junction annealed at 250℃for 1h exhibited that the values of resistance times cross section and tunnel magnetoresistance ratio were78Ω·µm^2 and 33%,respectively.2..Using the photolisography and Ar ion milling process,we fabricated a small junction with 3x3µm^2.On the other hand,small junction with 0.5x0.5µm^2was obtained by using electron beam lithography and no damage was confirmed for the junction by comparing the transport property measured before and after micro fabrication.3.Feasibility of tunnel magnetoresistive read head with flux-guide layers was investigated for helical-scan tape storage applications.A long-range exchange coupling bias scheme,with a Cu layer and an antiferromagnet were deposited on top of free layer in the tunnel-valve element,was employed.In order to stabilize domain structures in the free layer,the long range exchange coupling biasing was combined with conventional permanent magnet bias method。The maximum output voltage of the flux guide type reader was 1.75 mV_<;p-p>;which was corresponding to+1.5dB of a conventional anisotropic magnetoresistive reader.Furthermore,a tunnel magnetoresistive read head for HDD application was fabricated and an out put voltage corresponding to 10 Gb/inch^2was realized。
英文摘要
In order to fabricate a read head using tunnel magnetoresistive junction, optimization of the tunnel junction (layered structure, stacking sequence, optimal annealing condition, thickness of barrier layer) and micro-fabricating process have been studied. Two kinds of read head were successfully demonstrated. The main results are summarized as follows.1. The Ta30(Å)/Ni_<80>Fe_<20>(30Å)/Cu(200Å)/IrMn(100Å)CoFe(40Å)/Al-oxide/CoFe(40Å)/Ni_<80>Fe_<20>(200Å)/Ta(50Å) junction annealed at 250 ℃ for 1 h exhibited that the values of resistance times cross section and tunnel magnetoresistance ratio were 78 Ω・μm^2 and 33 %, respectively.2. Using the photolisography and Ar ion milling process, we fabricated a small junction with 3x3 μm^2. On the other hand, small junction with 0.5x0.5 μm^2 was obtained by using electron beam lithography and no damage was confirmed for the junction by comparing the transport property measured before and after micro fabrication.3. Feasibility of tunnel magnetoresistive read head with flux-guide layers was investigated for helical-scan tape storage applications. A long-range exchange coupling bias scheme, with a Cu layer and an antiferromagnet were deposited on top of free layer in the tunnel-valve element, was employed. In order to stabilize domain structures in the free layer, the long range exchange coupling biasing was combined with conventional permanent magnet bias method. The maximum output voltage of the flux guide type reader was 1.75 mV_<p-p> which was corresponding to +1.5 dB of a conventional anisotropic magnetoresistive reader. Furthermore, a tunnel magnetoresistive read head for HDD application was fabricated and an out put voltage corresponding to 10 Gb/inch^2 was realized.
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S. Ootsuka, et al.: "Micro-fabrication of ferromagnetic tunnel junctions using Ar ion milling"J. Magn. Soc. Jpn.. 23(4-2). 1305-1308 (1999)
S. Ootsuka 等人:“使用 Ar 离子铣削实现铁磁隧道结的微制造”J。
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Y.Ando: "ANALYSIS OF THE INTERLAYER IN FERROMAGNET/INSULATOR JUNCTIONS BY INELASTIC-ELECTRON-TUNNELING-SPECTROSCOPY"Journal of Magnetism and Magnetic Materials. 198-199. 161-163 (1999)
Y.Ando:“通过非弹性电子隧道光谱分析铁磁体/绝缘体结中的夹层”磁性和磁性材料杂志。
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大兼幹彦: "強磁性体/Al-Oxide/Co接合のトンネル磁気抵抗効果の印加電圧及び温度依存性"日本応用磁気学会誌. 23. 1297-1300 (1999)
Mikihiko Okane:“铁磁材料/Al-Oxide/Co 结中隧道磁阻效应的施加电压和温度依赖性”日本应用磁学学会杂志 23. 1297-1300 (1999)。
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安藤康夫: "AlをWedge状に絶縁層を形成した強磁性トンネル接合の磁気抵抗効果"日本応用磁気学会誌. 23. 1285-1288 (1999)
安藤康夫:“具有铝楔形绝缘层的铁磁隧道结的磁阻效应”日本应用磁学学会杂志 23. 1285-1288 (1999)
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H.Kyung: "Effect of microstructure on the magnetoresistive properties of NiFe/Co(CoFe)/Al(Ta)-oxide/Co(CoFe)tunnel junctions"J.Appl.Phys.. 89. 2752-2755 (2001)
H.Kyung:“微观结构对 NiFe/Co(CoFe)/Al(Ta)-氧化物/Co(CoFe)隧道结磁阻特性的影响”J.Appl.Phys.. 89. 2752-2755 (2001)
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共 85 条
Fabrication of perpendicular magnetized tunnel junction and magnetization reversal by spin injection
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批准号:21246001
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$30.53万
-
财政年份:2009
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负责人:MIYAZAKI Terunobu
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依托单位:
Development of magnetic tunnel junctions using Heusler alloy and observation of spin-injected magnetization reversal
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批准号:17206001
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$32.7万
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财政年份:2005
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负责人:MIYAZAKI Terunobu
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依托单位:
Spin injection into high quality small magnetic tunnel junctions
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批准号:13305001
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$35.78万
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财政年份:2001
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负责人:MIYAZAKI Terunobu
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依托单位:
Development of Spin Tunnel Magnetoresistive Read Head
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批准号:11792002
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项目类别:Grant-in-Aid for University and Society Collaboration
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资助金额:$6.27万
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财政年份:1999
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负责人:MIYAZAKI Terunobu
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依托单位:
Nanoscale Magnetism and Transport
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批准号:09236101
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$84.86万
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财政年份:1997
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负责人:MIYAZAKI Terunobu
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依托单位:
Study on Spin transport Devices
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批准号:08405001
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$21.44万
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财政年份:1996
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负责人:MIYAZAKI Terunobu
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依托单位:
Freezing Mechanism of Spins in Reentrant Spin-Glasses
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批准号:60540192
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$0.9万
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财政年份:1985
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负责人:MIYAZAKI Terunobu
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依托单位:
海外基金