Fabrication of perpendicular magnetized tunnel junction and magnetization reversal by spin injection
Fabrication of perpendicular magnetized tunnel junction and magnetization reversal by spin injection
批准号:
21246001
负责人:
MIYAZAKI Terunobu
金额:
$30.53万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2011
中文摘要
为了开发适用于高密度磁性随机存取存储器(MRAM)的存储单元材料,研究了饱和磁化强度Ms、垂直磁各向异性常数Ku和吉尔伯特阻尼常数对材料组成的依赖性。在外延Mn_xGa_<1-x>(0. 500万x 100万。75)合金薄膜随着x的增加,M_s值从600 ~ 200 emu/cc线性下降,而K_u值从15 ~ 10 Merg/cc略有下降。阻尼常数。是0。08(0. 015)Mn_<1. 54>Ga(Mn_<2. 12>Ga)薄膜。此外,我们还研究了Mn-Ga合金薄膜作为隧道结电极在10 K和300 K下的磁电阻比。在Mn-Ga电极和隧道势垒之间插入Fe(Co)后,室温下的TMR值最高可达60(40)%。MRAM存储单元需要增加TMR值。
英文摘要
In order to develop a memory cell material which is applicable to high density magnetic random access memory (MRAM), the composition dependence on saturation magnetization Ms, perpendicular magnetic anisotropy constant Ku and Gilbert damping constant . have been investigated in epitaxial Mn_xGa_<1-x> (0. 5≦x≦0. 75)alloy films. The M_s values decrease linearly from approximately 600 to 200 emu/cc with increasing x, where as the K_u values decrease slightly from 15 to 10 Merg/cc with increasing x. The damping constant . is 0. 08 (0. 015)for Mn_<1. 54> Ga (Mn_<2. 12> Ga)film. These magnetic properties satisfy the requirement for memory cell.Furthermore, by using Mn-Ga alloy films as the electrode of tunnel junction, we investigated the magnetoresistance ratio at 10 K and 300 K. With an insertion of Fe (Co)between Mn-Ga electrode and tunnel barrier the maximum TMR value up to 60 (40)%is obtained at room temperature. An increase of TMR value is necessary for MRAM memory cell.
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DOI:
10.1007/978-3-642-25583-0
发表时间:
2012-08
期刊:
影响因子:
--
作者:
[Han-min Jin;T. Miyazaki]
通讯作者:
Han-min Jin;T. Miyazaki
DOI:
10.1088/1742-6596/200/6/062037
发表时间:
2010
期刊:
Journal of Physics: Conference Series
影响因子:
--
作者:
[F. Wu;S. Mizukami;D. Watanabe;H. Naganuma;M. Oogane;Y. Ando;T. Miyazaki]
通讯作者:
F. Wu;S. Mizukami;D. Watanabe;H. Naganuma;M. Oogane;Y. Ando;T. Miyazaki
垂直磁化Ni/Co多層膜のスピン才差運動の光学的検出
垂直磁化 Ni/Co 多层薄膜中自旋进动的光学检测
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[水上成美, 永沼博, 大兼幹彦, 安藤康夫, 宮崎照宣]
通讯作者:
宮崎照宣
Heusler Alloy Films for Spintronics Materials
用于自旋电子学材料的赫斯勒合金薄膜
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[Z. Yatabe, Y. Hori, S. Kim, and T. Hashizume, Terunobu Miyazaki]
通讯作者:
Terunobu Miyazaki
磁気抵抗素子および磁気メモリ
磁阻元件和磁存储器
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[]
通讯作者:
共 77 条
Development of magnetic tunnel junctions using Heusler alloy and observation of spin-injected magnetization reversal
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批准号:17206001
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$32.7万
-
财政年份:2005
-
负责人:MIYAZAKI Terunobu
-
依托单位:
Spin injection into high quality small magnetic tunnel junctions
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批准号:13305001
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$35.78万
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财政年份:2001
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负责人:MIYAZAKI Terunobu
-
依托单位:
Fabrication process for hybrid magnetic material and fabrication of tunnel magnetoresistive read head
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批准号:11355001
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$23.44万
-
财政年份:1999
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负责人:MIYAZAKI Terunobu
-
依托单位:
Development of Spin Tunnel Magnetoresistive Read Head
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批准号:11792002
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项目类别:Grant-in-Aid for University and Society Collaboration
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资助金额:$6.27万
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财政年份:1999
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负责人:MIYAZAKI Terunobu
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依托单位:
Nanoscale Magnetism and Transport
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批准号:09236101
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$84.86万
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财政年份:1997
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负责人:MIYAZAKI Terunobu
-
依托单位:
Study on Spin transport Devices
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批准号:08405001
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$21.44万
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财政年份:1996
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负责人:MIYAZAKI Terunobu
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依托单位:
Freezing Mechanism of Spins in Reentrant Spin-Glasses
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批准号:60540192
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$0.9万
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财政年份:1985
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负责人:MIYAZAKI Terunobu
-
依托单位:
海外基金