DEVELOPMENT OF ONE-STOP MACHINING SYSTEM AND CORE TECHNOLOGIES FOR LARGE-DIAMETER Si WAFER BEING POTENTIALLY USED FROM YEAR 2003

开发大直径硅片一站式加工系统及核心技术 2003年有望投入使用

• 批准号: 11792007
• 负责人: EDA Hiroshi
• 金额: $ 5.25万
• 依托单位: IBARAKI UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for University and Society Collaboration
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11792007/
• 关键词: Silicon wafer; Giant magnetostrictive material; Ultraprecision positioner; Alignment control; Fixed abrasives; Grinding; 局所クリーンルーム; 省エネ

This research project has developed an integrated manufacturing system for φ300mm silicon wafer, using fixed abrasive instead of conventional free slurry, to provide a totally integrated solution for achieving the surface roughness R_a < 1nm(R_y < 5〜6nm) and the global flatness < 0.2μm/φ300mm. In addition to the space saving, this integrated system also significantly reduces the total energy consumption by 70%, compared with the current process used for φ200mm Si wafer. Four core technologies : the hybrid process mechanics, the GMM (giant magnetostrictive material) actuated positioning/alignment device and the ecologically friendly coolant circulation system have been developed in this research. The results obtained are summarized as follows ;The grinding system has two degrees of freedom. The work spindle moves along X-direction, while the wheel spindle moves along Z-direction. Aerostatic bearings are applied to the spindles and other guideways so that no contact is made between the c … More ounterparts. By disengaging the lead screw nut, the Z-axis table is floating in nature, and movable by a low friction pneumatic cylinder. This function creates a constant grinding force/pressure as low as 20gf/cm^2, and offers a polishing-like condition for the final finish. In order to achieve ductile mode grinding and improve the global flatness, a positioning and alignment mechanism is particularly developed for the work spindle. There are two sets of plates (600x600mm) installed between the work spindle and the X-axis table. The bottom plate is used for alignment, while the top plate for positioning. Powered by GMM actuators, the device is able to offer 6.25 Å step response at the payload of 750kgf, while to align the work spindle against the grinding wheel at the resolution of 10^<-2> seconds over the range of ± 1.5 degrees.Most of the silicon grinding system utilizes the plunge method to keep the contact area unchanged and thereby to deliver a stable grinding performance throughout the grinding process. As a result, the cutting path formed in the wafer center is much denser than that at the fringe. A kinematical analysis has been done in this research and the results lead to 1) the criteria for speed ratio combination to improve the surface roughness, 2) a proper alignment between the wheel and wafer to effectively reduce the profile error, 3) an optimal wheel geometry to attain a consistent cutting path density.In order to completely remove the subsurface damage, the project team is further developing a new process called as "CMG ; chemo-mechanical grinding", in which, the chemically active additives is applied to the mechanical grinding process. In addition to the surface roughness enhancement, the dislocation at the wafer subsurface finished by CMG process is significantly reduced to 1/30 as compared to the conventional precision grinding. Less

本研究项目开发了一套φ300 mm硅片的集成制造系统，用固定磨料代替传统的无研磨浆料，为实现表面粗糙度R_a&lt；1 nm(R_y&lt；5~6 nm)和全球平坦度&lt；0.2μm/φ300 mm提供了完全集成的解决方案。除了节省空间外，与目前用于φ200 mm硅片的工艺相比，该集成系统还显著降低了总能耗70%。本研究开发了四项核心技术：混合工艺机械、超磁致伸缩材料驱动的定位/对准装置和生态友好的冷却液循环系统。研究结果总结如下：研磨系统具有两个自由度。工作主轴沿X方向移动，而砂轮主轴沿Z方向移动。空气静压轴承应用于主轴和其他导轨，因此c…之间不会接触。更多的外星人。通过松开丝杠螺母，Z轴工作台在自然界中是浮动的，并由低摩擦气缸移动。此功能可产生低至20gf/cm^2的恒定磨削力/压力，并为最终抛光提供类似抛光的条件。为了实现延性模式磨削，提高整体平整度，专门为工作主轴设计了定位对准机构。在工作主轴和X轴工作台之间安装了两组板(600x600 Mm)。底板用于对准，顶板用于定位。该装置由超磁致伸缩执行器驱动，在有效载荷为750kgf时能够提供6.25kgf的阶跃响应，同时在±1.5度范围内以10^lt；-2秒的分辨率将工作主轴对准砂轮。硅片磨削系统的大部分采用插入法来保持接触面积不变，从而在整个磨削过程中提供稳定的磨削性能。因此，在晶片中心形成的切割路径比在边缘形成的切割路径密集得多。本研究进行了运动学分析，得出了1)改善表面粗糙度的速比组合标准，2)砂轮与晶片之间适当的对准以有效减少轮廓误差，3)最佳砂轮几何形状以获得一致的切割路径密度。为了完全消除亚表面损伤，项目组进一步开发了一种新的工艺，称为CMG；化学机械磨削，其中化学活性添加剂被应用到机械磨削过程中。除了表面粗糙度的提高外，CMG工艺加工的晶片亚表面位错比常规精密磨削显著减少到1/30。较少

项目成果

H.Eda,H.Hamada,Y,Tomita and Y.Yamamoto: "Study on Super-Fine Diamond Cluster with Application to Ultra-Precision Surface Generation"Journal of the Balkan Tribological Association. 5・2. 94-104 (1999)

H. Eda、H. Hamada、Y、Tomita 和 Y. Yamamoto：“超细金刚石簇及其应用于超精密表面生成的研究”巴尔干摩擦学协会杂志 5・2（1999 年）。

江田弘, 周立波, 守屋光永, 川上辰男, 石川友彦, 山本佳男: "電子顕微鏡内マイクロファブリケーションデバイスの技術開発"精密工学会誌. 67・8. 52-56 (2001)

Hiroshi Eda、Libo Zhou、Mitsunaga Moriya、Tatsuo Kawakami、Tomohiko Ishikawa、Yoshio Yamamoto：“电子显微镜微加工装置的技术发展”日本精密工程学会杂志 67・8（2001 年）。

江田 弘, 周 立波: "ナノ・マイクロマシン技術総覧(分担)"(株)産業技術サービスセンター(掲載待ち). (2002)

Hiroshi Eda、周立波：《纳米/微机械技术概述（分享）》工业技术服务中心有限公司（待出版）。

Hiroshi Eda Libo Zhou and Jun SHimizu: "Development of Powder Metallurgic Giant Magnetostrictive Materials and Their Applications"Proceedings of AMSMA '2000. 117-120 (2000)

Hiroshi Eda Libo Zhou 和 Jun Shimizu：“粉末冶金超磁致伸缩材料的开发及其应用”AMSMA 2000 论文集。

Hiroshi Eda,Libo Zhou and Jun Shimizu: "Computer Assisted Modeling and Simulation for Grinding Process"Proc.EUSPEN'99(GERMANY). 226-229 (1999)

Hiroshi Eda、Libo Zhou 和 Jun Shimizu：“磨削过程的计算机辅助建模和仿真”Proc.EUSPEN99（德国）。