EXCELLENT TEMPERATURE CHARACTERISTIC 1.2 μm SINGLE-MODE SEMICONDUCTOR LASERS AND ITS APPLICATION TO ULTRA-HIGH SPEED OPTICAL LINKS

优异的温度特性1.2μm单模半导体激光器及其在超高速光链路中的应用

• 批准号: 12355016
• 负责人: SAKAGUCHI Takahiro
• 金额: $ 22.02万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12355016/
• 关键词: 1.2 μm SINGLE-MODE SEMICONDUCTOR LASER; HIGH STRAINE STRUCTURE; SURFACE EMITTING LASER; EXCELLENT TEMPERATURE; HIGH SPEED OPTICAL LINK; 半導体レーザ; 光通信; 微小光学; 並列光情報処理; 光インターコネクト; 光集積回路

We realized the wavelength extension of GaInAs/GaAs strained quantum wells1) to open up a new wavelength band of 1.0-1.2 μm. We newly introduced a strained buffer layer and established growth conditions in MOCVD, enabling us to grow highly strained layers with a strain of over 2 %. The PL wavelength of grown GaInAa QWs could be extended to be over 1.2 μm without any degradation in crystal qualities.We fabricated 50 μm wide broad area lasers with 1.2 μm GaInAs QWs. The lowest threshold current density of broad area lasers is 170 A/cm2 for double QWs. Figure 3 shows various L/I curves at different heat sink temperatures up to 170 ℃. A characteristic temperature T0 under is over 200 K, which is the highest at 1.2〜1.3 μm wavelength band. Ridge waveguide devices can be operated under cw operation without bonding on heat-sink. Some devices under high injection showed a lasing wavelength beyond 1.25 μm, which is the longest wavelength ever reported for the GaInAs/GaAs system.We fabricated vertical cavity surface emitting lasers (VCSELs) with GaInAs. We achieved a threshold current of 0.9 mA, high-temperature operation of up to 170 ℃, and high reliability of 〉2000 hours. This device was grown on GaAs(311)B substrate, showing large orthogonal polarization suppression ratio (OPSR) of 30dB. We realized single longitudinal, fundamental transverse-mode and polarization in the VCSLE. The device shows an excellent temperature characteristics up to 180 ℃.We also demonstrated a multi-wavelength VCSEL array on a patterned substrate in a wavelength band of 1.1-1.2 μm. We carried out data transmission with 2.5 Gb/s x 4 channels was achieved.

我们实现了GaInAs/GaAs应变量子阱的波长展宽，开辟了1.0-1.2 μm的新波段。我们新引入了应变缓冲层，并在MOCVD中建立了生长条件，使我们能够生长应变超过2%的高应变层。生长的GaInAs量子阱的PL波长可以扩展到1.2 μm以上，而晶体质量没有任何下降。双量子阱宽区激光器的最低阈值电流密度为170 A/cm ~ 2。图3显示了在高达170 ℃的不同散热器温度下的各种L/I曲线。其特征温度T0在200 K以上，在1.2 ~ 1.3 μm波段最高。脊形波导器件可以连续工作，而不需要在热沉上进行键合。在高注入条件下，部分器件的激射波长超过1.25 μm，这是目前报道的GaInAs/GaAs系统的最长激射波长。我们实现了0.9 mA的阈值电流，高达170 ℃的高温工作，以及高达2000小时的高可靠性。该器件生长在GaAs（311）B衬底上，具有30 dB的正交极化抑制比（OPSR）。在VCSL中实现了单纵模、基横模和偏振。该器件在180 ℃温度范围内具有良好的温度特性，并在1.1-1.2 μm波段实现了多波长VCSEL阵列。我们进行了数据传输与2.5 Gb/s × 4通道实现。

项目成果

Dietmar Schlenker: "Critical layer thickness of 1.2-μm highly strained GaInAs/GaAs quantum wells"J.Crystal Growth. 221. 503-508 (2000)

Dietmar Schlenker：“1.2μm 高应变 GaInAs/GaAs 量子阱的临界层厚度”J.Crystal Growth。221. 503-508 (2000)。

Nobuhiko Nishiyama: "Growth and optical properties of highly strained GaInAs/GaAs quantum wells on (311)B GaAs by MOCVD"J.Crystal Growth. 221. 530-534 (2000)

Nobuhiko Nishiyama：“通过 MOCVD 在 (311)B GaAs 上实现高应变 GaInAs/GaAs 量子阱的生长和光学特性”J.Crystal Growth。

Yasuhiko Aoki: "Collimation characteristics of planar microlens for parallel optical interconnect"Optical Review. 7/6. 483-485 (2000)

Yasuhiko Aoki：“用于并行光学互连的平面微透镜的准直特性”光学评论。

Nobuhiko Nishiyama, Masakazu Aral, Satoshi Shinada, Munechika Azuchi, Akihiro Matsutani, Tomoyuki Miyamoto, Fumio Koyama, and Kenichi Iga: "1.12 μm polarization controlled highly strained GalnAs vertical- cavity surface-emitting lasers on GaAs(311)B by me

Nobuhiko Nishiyama、Masakazu Aral、Satoshi Shinada、Munechika Azuchi、Akihiro Matsutani、Tomoyuki Miyamoto、Fumio Koyama 和 Kenichi Iga：“我在 GaAs(311)B 上实现了 1.12 μm 偏振控制高应变 GalnAs 垂直腔表面发射激光器

N.Nishiyama, M.Arai, S.Shinada, M.Azuchi, A.Matsutani, T.Miyamoto, F.Koyama, K.iga: "1.12 μm polarization controlled highly strained GaInAs vertical-cavity surface-emitting lasers on GaAs(311)B by metal organic chemical vapor deposition"Jpn. J. AppI. Phys

N.Nishiyama、M.Arai、S.Shinada、M.Azuchi、A.Matsutani、T.Miyamoto、F.Koyama、K.iga：“GaAs 上的 1.12 μm 偏振控制高应变 GaInAs 垂直腔表面发射激光器（ 311)B 通过金属有机化学气相沉积法“Jpn. J. AppI. Phys