Next generation Using GaInN Blue VCSEL for a light source of the DVD with a large capacity

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We present the design and fabrication of highly reflective and low loss multilayer dielectric mirrors (SiO_2/ZrO_2) for GaN based vertical cavity surface emitting lasers (VCSELs). We consider two types of VCSEL structures ; one consists of AlN/GaN vertical cavity structure with a cavity length of 1.9 μm has been demonstrated. The other consists of two dielectric mirrors (SiO_2/ZrO_2) with a polished thin sapphire substrate. A resonant emission forma photo-pumped GaInN/GaInN vertical cavity with a spectral line width of 3.8 nm has been demonstrated. Also, we propose a new structure using lateral growth on dielectric Mirrors as a bottom reflector. We have demonstrated and characterized the thin GaInN/GaN 10 MQWs fabricated by removing a sapphire substrate with UV light irradiation for making a micro-cavity structure. The PL properties of standing-alone QWs show no noticeable degradation of QWs after the removing process. We pointed out the importance of the flatness of removed interfaces.