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MEMS Active Probe for Wafer-level Switching Contacter

用于晶圆级开关接触器的 MEMS 有源探头

基本信息

批准号：
12650049
负责人：
ITOH Toshihiro
金额：
$ 2.3万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650049/
关键词：
MEMS Probe Card Fritting Contact Contact Resistance Microcantilever Ni Electroplating Wafer-level Contacter Switching Contact Atomic Force Microscope マイクロアクチュエータ

项目摘要

The purpose of this stude is to propose the new IC probe card which consists of actuator-integrated MEMS probes and enables the direct switching of contacts. Also, we have attempted to develop basic fabrication processes to realize it. Specifically, we have studied the fritting contact process which is a kind of electrical breakdown and is indispensable to make contact to Al pads with low forces using the MEMS probe. The important results are described below.1. Characterization of fritting contact using newly developed measurement systemsWe have realized the systems which can measure the fritting-contact characteristics with the force resolution of 10 μN and measured the characteristics of the contacts between several kinds of probes and pad metallurgy films of Al and Cu.(1) Contact resistance decreases with increasing the maximum fritting current determined by the fritting voltage and circuit resistance.(2) Ni probe can have lowest contact resistance among the conventional probes. When the limit current is larger than 100 mA, the resistance can be smaller than 1 Ω, even if the contact force is around 10μN.2. Development of electroplated Ni microcantilever probesWe have proposed the micromachined Ni curl-up cantilever utilizing the difference of internal stress in electroplated Ni double layers and developed its fabrication process. The internal stress difference of about 400 MPa has successfully been obtained utilizing a salfamic acid bath for the lower low-stress layer and a Watts bath for the upper high-stress layer.We have demonstrated that the Ni microcantilever probes can be applied to the test of IC with the pad pitch of less than 20 μm, by measuring the spring constant of the fabricated microprobes as 70 % of calculated value and showing their fritting characteristics are comparable to those of the conventional needle probes.

本研究的目的是提出一种新的IC探针卡，它由驱动器集成的MEMS探针，并能够直接切换的接触。此外，我们还试图开发基本的制造工艺来实现它。具体来说，我们研究了烧结接触过程，这是一种电击穿，是必不可少的，使接触到铝垫与低力使用MEMS探针。重要的结果如下所述。使用新开发的测量系统表征烧结接触我们实现了力分辨率为10 μN的烧结接触特性测量系统，并测量了多种探针与Al和Cu焊盘冶金膜之间的接触特性。(1)接触电阻随最大烧结电流的增大而减小，最大烧结电流由烧结电压和电路电阻决定。(2)在传统的探针中，镍探针可以具有最低的接触电阻。当极限电流大于100 mA时，即使接触力在10μ N左右，电阻也可以小于1 Ω。2.电镀镍微悬臂梁探针的研制利用电镀镍双层膜内应力的差异，提出了微机械镍卷曲悬臂梁的结构，并研究了其制作工艺。采用氨基水杨酸镀液作为低应力层，Watts镀液作为高应力层，成功地获得了400 MPa左右的内应力差，表明该探针可用于焊盘间距小于20 μm的集成电路测试。通过测量所制造的微探针的弹簧常数为计算值的70%，并显示它们的烧结特性与传统的针探针的烧结特性相当。