Experimental and Quantitative Analysis of Wavefunction and Effective Mass in Semiconductor Quantum Confined States (Photonic Device Design Rules)

研究了InGaAs/InAlAs量子阱（QW）的光学特性以及InGaAs/InAlAs量子阱和InGaAs/AlAsSb量子阱的磁光特性，旨在阐明适用于1.5微米波段当代“光通信系统”的光子器件设计规则。量子阱结构将电子限制在2 - 20纳米厚的量子阱电位内。通过对测量的光电流谱、透射谱及相关Stark效应的分析，得到了一系列的本征态能量和相关的传导电子有效质量，以识别带间的光跃迁。首次系统地观察了垂直于量子阱平面的电子有效质量作为电子动能的函数。利用量子阱的有效质量和波函数对光吸收进行了理论计算，与实验结果吻合较好。测量了回旋加速器共振能量与磁场和磁光光谱的关系，得到了回旋加速器有效质量或朗道能级质量。研究了平行于量子阱平面的电子质量。Kane的三能级能带理论成功应用于QW结构，解释了低温和高温下强磁场或零磁场下的实验。量子阱中受限态的本征能可以用InGaAs材料本身固有的“非抛物传导子带”理论来描述。实验考察了能带理论在纳米尺度物质中的适用性。

It has been investigated the optical properties of InGaAs/InAlAs quantum well (QW) and magneto-optical properties of InGaAs/InAlAs QW as well as InGaAs/AlAsSb QW, in order to clarify the design rules of photonic devices applicable to 1.5-micron-band contemporary "optical telecommunication systems." The QW structures confines electrons inside the two-to-twenty nano-meter thick QW potentials electronically.A series of eigen-state energies and related effective masses of conduction electrons were obtained after analysis of measured photo-current spectra, optical transmission spectra and related Stark effect to identify inter-band optical transitions. Electron effective masses normal to the QW plane was first observed systematically as a function of electron kinetic energy. Optical absorption was theoretically calculated using effective masses and wave functions in QWs to get good coincidence with experiments.Cyclotron resonance energies as a function of magnetic field and magneto-photo-luminescence spectra were measured to obtain cyclotron effective masses or Landau-level masses. Electron masses parallel to the QW plane was investigated.Kane's three-level band theory was successfully applied to the QW structure, which explained experiments in strong magnetic fields or zero-magnetic filed at low and high temperatures. Eigen-energies in confined states in QWs could be described by the theory of "nonparabolic conduction subband" intrinsic to the InGaAs material itself. Applicability of band theory in the nanoscale substance was experimentally surveyed.