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Experimental and Quantitative Analysis of Wavefunction and Effective Mass in Semiconductor Quantum Confined States (Photonic Device Design Rules)

Experimental and Quantitative Analysis of Wavefunction and Effective Mass in Semiconductor Quantum Confined States (Photonic Device Design Rules)
半导体量子限域中波函数和有效质量的实验和定量分析(光子器件设计规则)
批准号:
12650318
负责人:
KOTERA Nobuo
金额:
$1.73万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2000
资助国家:
日本
项目状态:
已结题
起止时间:
2000 至 2001

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中文摘要
翻译
为了阐明适用于1.5微米波段当代“光通信系统”的光子器件的设计规律,研究了InGaAs/InAlAs量子阱(QW)的光学性质和InGaAs/InAlAs量子阱和InGaAs/AlAsSb量子阱的磁光性质。量子波结构将电子限制在2~20纳米厚的量子波势内,通过分析测量的光电流光谱、光学传输光谱和相关的斯塔克效应来识别带间光学跃迁,得到了一系列本征态能量和相关的传导电子的有效质量。首次系统地观测到了垂直于QW平面的电子有效质量作为电子动能的函数。利用量子阱中的有效质量和波函数对光吸收进行了理论计算,得到了与实验一致的结果。测量了回旋共振能随磁场的变化以及磁光致发光光谱,得到了回旋有效质量或朗道能级质量。研究了平行于量子阱平面的电子质量,成功地将凯恩的三能级能带理论应用到量子阱结构中,解释了在强磁场或零磁场下的低温和高温实验。量子阱中限制态的本征能量可以用InGaAs材料本身固有的“非抛物线导带”理论来描述。对能带理论在纳米材料中的适用性进行了实验研究。
英文摘要
It has been investigated the optical properties of InGaAs/InAlAs quantum well (QW) and magneto-optical properties of InGaAs/InAlAs QW as well as InGaAs/AlAsSb QW, in order to clarify the design rules of photonic devices applicable to 1.5-micron-band contemporary "optical telecommunication systems." The QW structures confines electrons inside the two-to-twenty nano-meter thick QW potentials electronically.A series of eigen-state energies and related effective masses of conduction electrons were obtained after analysis of measured photo-current spectra, optical transmission spectra and related Stark effect to identify inter-band optical transitions. Electron effective masses normal to the QW plane was first observed systematically as a function of electron kinetic energy. Optical absorption was theoretically calculated using effective masses and wave functions in QWs to get good coincidence with experiments.Cyclotron resonance energies as a function of magnetic field and magneto-photo-luminescence spectra were measured to obtain cyclotron effective masses or Landau-level masses. Electron masses parallel to the QW plane was investigated.Kane's three-level band theory was successfully applied to the QW structure, which explained experiments in strong magnetic fields or zero-magnetic filed at low and high temperatures. Eigen-energies in confined states in QWs could be described by the theory of "nonparabolic conduction subband" intrinsic to the InGaAs material itself. Applicability of band theory in the nanoscale substance was experimentally surveyed.
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通讯作者:
N. Kotera, H. Akimoto, N. Miura, K. Tanaka, T. Kawano, K. Shibata, H. Nakamura, T. Mishima, K. Aiki, and M. Washima: "Nonparabolic Effective Masses of Conduction Subbands in InGaAs/InAlAs Quantum Wells in Normal and Parallel Directions"Physica B. 298. 221
N. Kotera、H. Akimoto、N. Miura、K. Tanaka、T. Kawano、K. Shibata、H. Nakamura、T. Mishima、K. Aiki 和 M. Washima:“InGaAs 中传导子带的非抛物线有效质量
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N.Kotera, H.Arimoto, N.Miura, K.Shibata, Y.Ueki, K.Tanaka, H.Nakamura, T.Mishima, K.Aiki, M.Washima: "Electron Effective Mass and Nonparabolicity in InGaAs/InAlAs Quantum Wells Lattice-Matched to InP"Physica E. Vol.11. 219-223 (2001)
N.Kotera、H.Arimoto、N.Miura、K.Shibata、Y.Ueki、K.Tanaka、H.Nakamura、T.Mishima、K.Aiki、M.Washima:“InGaAs/InAlAs 中的电子有效质量和非抛物线性
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N.Kotera, E.D.Jones, T.Sakai, T.Kawano, K.Shibata, Y.Mishima: "Temperature Effect of Magneto-Photo-Luminescence in InGaAs/InAlAs Quantum Wells ; Application of Band Theory to Nonparabolic Conduction Subband"Microelectronic Engineering. (印刷中). (2002)
N.Kotera、E.D.Jones、T.Sakai、T.Kawano、K.Shibata、Y.Mishima:“InGaAs/InAlAs 量子阱中磁光致发光的温度效应;能带理论在非抛物线传导子带中的应用”微电子工程(正在出版)。
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