权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Experimental and Quantitative Analysis of Wavefunction and Effective Mass in Semiconductor Quantum Confined States (Photonic Device Design Rules)

半导体量子限域中波函数和有效质量的实验和定量分析（光子器件设计规则）

基本信息

批准号：
12650318
负责人：
KOTERA Nobuo
金额：
$ 1.73万
依托单位：
Kyushu Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

项目摘要

It has been investigated the optical properties of InGaAs/InAlAs quantum well (QW) and magneto-optical properties of InGaAs/InAlAs QW as well as InGaAs/AlAsSb QW, in order to clarify the design rules of photonic devices applicable to 1.5-micron-band contemporary "optical telecommunication systems." The QW structures confines electrons inside the two-to-twenty nano-meter thick QW potentials electronically.A series of eigen-state energies and related effective masses of conduction electrons were obtained after analysis of measured photo-current spectra, optical transmission spectra and related Stark effect to identify inter-band optical transitions. Electron effective masses normal to the QW plane was first observed systematically as a function of electron kinetic energy. Optical absorption was theoretically calculated using effective masses and wave functions in QWs to get good coincidence with experiments.Cyclotron resonance energies as a function of magnetic field and magneto-photo-luminescence spectra were measured to obtain cyclotron effective masses or Landau-level masses. Electron masses parallel to the QW plane was investigated.Kane's three-level band theory was successfully applied to the QW structure, which explained experiments in strong magnetic fields or zero-magnetic filed at low and high temperatures. Eigen-energies in confined states in QWs could be described by the theory of "nonparabolic conduction subband" intrinsic to the InGaAs material itself. Applicability of band theory in the nanoscale substance was experimentally surveyed.

本文研究了InGaAs/InAlAs量子阱的光学特性、InGaAs/InAlAs量子阱和InGaAs/AlAsSb量子阱的磁光特性，旨在阐明适用于1.5微米波段现代光通信系统的光子器件的设计原则。量子阱结构将电子以电子方式限制在2 - 20纳米厚的量子阱势中。通过分析测量的光电流谱、光透射谱和相关的斯塔克效应，确定了一系列本征态能量和相关的传导电子有效质量，以确定带间光学跃迁。垂直于量子阱平面的电子有效质量首次被系统地观察到作为电子动能的函数。利用量子阱中的有效质量和波函数理论计算了量子阱的光吸收，得到了与实验符合较好的结果，测量了回旋共振能量随磁场的变化和磁光致发光谱，得到了回旋有效质量或朗道能级质量。研究了平行于量子阱平面的电子质量，将Kane的三能级能带理论成功地应用于量子阱结构，解释了低温和高温下强磁场和零磁场下的实验结果。量子阱中束缚态的本征能量可以用InGaAs材料本身固有的"非抛物传导子带"理论来描述。实验考察了能带理论在纳米尺度物质中的适用性。