Experimental quantification of wave function and effective mass in quantum confined states of semiconductor

半导体量子限制态中波函数和有效质量的实验量化

• 批准号: 14550303
• 负责人: TANAKA Koichi
• 金额: $ 0.7万
• 依托单位: HIROSHIMA CITY UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14550303/
• 关键词: molecular beam epitaxy; multi-quantum well; photocurrent; confined state; allowed transition; forbidden transition; effective mass

Quantum confined states of the In_<0.53>Ga_<0.47>As/In_<0.52>Al_<0.48>As multi-quantum well structures (MQWs) fabricated with molecular beam epitaxy equipment (MBE) were studied using the photocurrent spectroscopy and the optical transmission spectroscopy.The optical current spectra of three kinds of undoped MQWs structures, which had different well width (each well width 5, 9.4, 20nm), showed steplike structure and optical interband transitions were observed clearly. In the careful analysis using two or more photocurrent spectra and the difference of those obtained by applying bias voltage, allowed interband transitions having same quantum numbers and forbidden interband transitions having different quantum numbers were assigned between conduction subband and valence subband and eigen-energies of these subbands had been determined. By fitting the experimental eigen-energies of the subbands to the envelope function approximation, and band offset and effective mass of hole, and electron … More to a normal direction to the MQWs layers are determined. It depended for electron effective mass on the energy of corresponding conduction subband. When it assumes that electron effective-mass changes gently to energy and this mass at the bottom of a conduction well was 0.041m_0 as much as as the effective mass at the bandedge end of bulk, the energy dependability of subband with the small number or low eigen-energy can also fully be taken into consideration, and electron effective mass can be expressed with the secondary function of energy. Electron effective mass was increased from 0.041m_0 to 0.08m_0.Also in the optical transmission spectroscopy to a undoped MQWs structure and two kinds of modulation-doped MQWs, structure with 10 nm well width, these spectra became steplike and allowed interband transitions were observed. About the modulation-doped specimens (1.5x10^<12> cm^<-2> 0.5x10^<12> cm^<-2>) the interband transitions between both ground states which were lower than Fermi Level were not observed by band filling effect of the electric charge within the MQWs structure. There is almost no temperature dependability in the steplike structure of the spectra measured at the temperature of 100K-330K, and the changes of transition energies were only dependent on the band gap energy of a well layer. Moreover, the, spectra of the absorption coefficient by integration of each wave function have expressed the optical transmission spectra.The eigen-energy and the interbnad transition energy, which were calculated with the Poisson equation of an electric charge distribution and envelope function approximation model using physical-properties parameters, such as effective mass, well agreed with an photocurrent and optical transmission experiment and the quantification of the wave function and effective mass were able to perform on the In_<0.53>Ga_<0.47>As/In_<0.52>Al_<0.48>As MQWs. Less

利用<0.53><0.47><0.52><0.48>光电流谱和光透射谱研究了用分子束外延（MBE）技术制备的In_ Ga_ As/In_ Al_ As多量子阱结构的量子限制态，观察到三种不同阱宽（阱宽分别为5，9.4，20 nm）的非掺杂多量子阱结构的光电流谱呈现台阶状结构，并观察到明显的带间光跃迁。在使用两个或多个光电流谱和通过施加偏置电压获得的光电流谱的差异的仔细分析中，具有相同量子数的允许带间跃迁和具有不同量子数的禁止带间跃迁被分配在导子带和价带之间，并且这些子带的本征能量已经被确定。通过对实验得到的各子带的本征能量进行包络函数近似拟合，得到了空穴和电子的带阶和有效质量 ...更多信息 确定与多量子阱层的法线方向的夹角。电子的有效质量取决于相应传导子带的能量。当假定电子有效质量随能量变化平缓，且在阱底的电子有效质量与体材料带边端的电子有效质量一样为0.041m_0时，也可以充分考虑小数目或低本征能的子带的能量依赖性，电子有效质量可用能量的二次函数表示。电子有效质量从0.041m_0增加到0.08m_0。在一个未掺杂的多量子阱结构和两种调制掺杂的多量子阱结构（阱宽为10 nm）的光透射谱中，这些谱变得阶梯状，并观察到允许的带间跃迁。对于调制掺杂的样品（1.5 × 10 ~（13）cm <12>~ 2 ~ <-2>0.5 × 10 ~（13）<12>cm ~ 2<-2>），由于多量子阱结构中电荷的带填充效应，没有观察到低于费米能级的两个基态之间的带间跃迁。在100 K-330 K温度范围内，谱线的阶跃结构几乎没有温度依赖性，跃迁能的变化仅与阱层的带隙能有关。此外，通过对各波函数积分得到的吸收系数谱表示了光透射谱，并利用有效质量等物性参数，利用电荷分布的泊松方程和包络函数近似模型计算了本征能量和带间跃迁能量，与光电流和光透射实验结果一致，并对In_<0.53>Ga_<0.47>As/In_<0.52>Al_<0.48>As多量子阱的波函数和有效质量进行了定量分析。少

项目成果

N.Kotera, K.Ohshima, K.Tanaka, M.Washima, H.Nakamura: "Effect of doping in barrier on photo-reflectance spectra of InGaAs/InAlAs MQWs ; Donor-states and QW eigen-states"Proceedings of 15th Indium Phosphide and Related Materials Conference. IEEE, Catalog 0

N.Kotera、K.Ohshima、K.Tanaka、M.Washima、H.Nakamura：“势垒掺杂对 InGaAs/InAlAs MQW 光反射光谱的影响；施主态和 QW 本征态”第 15 届 Indium 会议论文集

Y.Tanoue, K.Tanaka, T.Kawano, K.Shibata, N.Kotera, H.Nakamura, M.Washima, M.Matsui: "Temperature Dependence of Eigen-energies Observed in Optical Transmittans of Doped and Undoped InGaAs/InAlAs MQWs"Proceedings of 14th Indium Phoshide and Related Material

Y.Tanoue、K.Tanaka、T.Kawano、K.Shibata、N.Kotera、H.Nakamura、M.Washima、M.Matsui：“在掺杂和未掺杂 InGaAs/InAlAs 的光传输中观察到的本征能量的温度依赖性

N.Kotera, K.Ohshima, K.Tanaka, M.Washima, H.Nakamura: "Effect of doping in barrier on photo-reflectance spectra of InGaAs/InAlAs MQWs ; Donor-states and QW eigen-states"Proceedings of 15th Indium Phosphide and Related Materials Conference, IEEE, Catalog 0

N.Kotera、K.Ohshima、K.Tanaka、M.Washima、H.Nakamura：“势垒掺杂对 InGaAs/InAlAs MQW 光反射光谱的影响；施主态和 QW 本征态”第 15 届 Indium 会议论文集

K.Tanaka, N.Kotera, H.Nakamura: "Electric Field Effect for Eigen States in In_<0.53>Ga_<0.47>As/In_<0.52>Al_<0.48>As Multi-Quantum Wells Using Photocurrent Spectroscopy"Proceedings of IEEE/LEOS 3rd International Conference on Numerical Simulation of Semic

K.Tanaka、N.Kotera、H.Nakamura：“利用光电流光谱研究 In_<0.53>Ga_<0.47>As/In_<0.52>Al_<0.48>As 多量子阱中本征态的电场效应”IEEE 会议录

K.Tanaka, N.Kotera, H.Nakamura: "Electric Field Effect for Eigen States in In_<0.53>Ga_<0.47>As/In_<0.52>Al_<0.48>As Multi-Quantum Wells Using Photocurrent Spectroscopy"16th International Conference on Indium Phosphide and Related Materials 2004, 5月 (鹿児島)

K. Tanaka、N. Kotera、H. Nakamura：“利用光电流光谱研究 In_<0.53>Ga_<0.47>As/In_<0.52>Al_<0.48>As 多量子阱中本征态的电场效应”第 16 届国际会议磷化铟及相关材料 2004 年 5 月（鹿儿岛）