Fundamental Study on Silicon Optical Switch for Total-Silicon Opto-Electric Integrated Circuits

全硅光电集成电路硅光开关基础研究

• 批准号: 12650346
• 负责人: SUNAMI Hideo
• 金额: $ 2.3万
• 依托单位: HIROSHIMA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650346/
• 关键词: Optical switch; Infra-red light absorption by free carriers; Comb-shaped beam transistor; SOI; Transparent electrode; ITO; モノリシック光配線; 自由電子吸収; 櫛形MOSトランジスタ; 結晶方位依存異方性エッチング; 消光比

The purpose of this study is an implementation of optical switch based on infra-red light absorption with free carriers in silicon. This is not ever proposed and a very challenging target. Since one of key issues to realize that is how large amount of free carriers is generated, a comb-shaped MOS transistor is fabricated. Due to reasons described below, the first trial failed however, a new comb-shaped MOS transistor is realized and future targets can be fixed based on analyses on optical wave guide structure.<Reasons of failure of first trial>1. Incident parallel infra-red light of 10 μm in diameter does not stay within a beam of 1 μm in height and 1 mm in length but disperse into silicon substrate.2. Polysilicon with 10^<21>/cm^3 impurity, filled into comb gaps, strongly absorbs incident infrared light.<Realization of comb-shaped transistor>1. A comb-shaped transistor of 2 μm in effective channel length with 1-μm high and 50-nm wide beams is successfully obtained.2. A comb-shaped transistor having 31 beams realizes 5-times greater drivability compared to that of planar transistor.<Further investigations>1. Incident infra-red light should be locked up inside silicon beam having higher refractive index using SOI substrate.2. ITO gate should be utilized. However, since the less conductivity of the ITO gives less absorption, it is estimated that the gate conductivity should be optimized.3. Since it is analyzed that high reflective metal films like aluminum can be suitable, aluminum-gate MOS transistors will be implemented as well as the ITO transistors.4. Based on the experimental and the analyses described above, it is still planned to realize an optical silicon switch MOS transistor.

本研究的目的是在硅中实现一种基于自由载流子吸收红外光的光开关。这从来没有被提出过，也是一个非常具有挑战性的目标。由于实现这一目标的关键问题之一是产生多少自由载流子，因此制作了梳状MOS晶体管。由于上述原因，第一次试验失败，实现了一种新的梳状MOS晶体管，并可以根据光波导结构的分析来确定未来的目标。<第一次试验失败的原因>1。入射直径为10 μm的平行红外光不会停留在高1 μm、长1 mm的光束内，而是分散到硅衬底中。含有10^<21>/cm^3杂质的多晶硅，填充在梳状空隙中，强烈吸收入射红外光。梳状晶体管>的实现成功地获得了有效通道长度为2 μm、光束高为1 μm、宽为50 nm的梳状晶体管。具有31束的梳状晶体管实现了比平面晶体管高5倍的驱动性。<进一步调查> 1。使用SOI衬底将入射红外光锁定在具有较高折射率的硅光束内。应利用ITO栅极。然而，由于ITO的电导率越低，吸收越少，估计栅极电导率应该得到优化。据分析，高反射金属薄膜如铝可以是合适的，铝栅MOS晶体管将被实施以及ITO晶体管。基于上述的实验和分析，我们仍然计划实现一个光硅开关MOS晶体管。

项目成果

T.Furukawa: "A Corrugated-Channel Transistor (CCT) with Vertically-Formed Channels for Area-Conscious Applications"Jap. J. Appl. Physics. 42. 1-6 (2003)

T.Furukawa：“具有垂直形成通道的波纹通道晶体管（CCT），用于区域意识应用”Jap。

H.Sunami: "Orientation-Dependent Anisotropic TMAH Etchant Applied to 3-D Silicon Nanostructure Formation"Proc. Pacific Rim Workshop on Transducers and Micro/nano Technologies. 367-372 (2002)

H.Sunami：“方向相关各向异性 TMAH 蚀刻剂应用于 3-D 硅纳米结构形成”Proc。

H. Sunami et al.: "Orientation-Dependent Anisotropic TMAH Etchant Applied to 3-D Silicon Nanostructure Formation"J Proc. Pacific Rim Workshop on Transducers and Micro/nano Technologies. 367-372 (2002)

H. Sunami 等人：“应用于 3-D 硅纳米结构形成的方向相关各向异性 TMAH 蚀刻剂”J Proc。

古川智康: "ビームチャネルMOSFETによる赤外光スイッチの提案"第61回応用物理学会学術講演会・講演予稿集. 第3分冊. 1227 (2000)

Tomoyasu Furukawa：“使用光束通道MOSFET的红外光开关的提案”第61届日本应用物理学会年会论文集第3卷1227（2000年）。

T.Furukawa: "Corrugated-Channel Transistor (CCT) Transistor (CCT) for Area-Conscious Applications"Ext. Abs. of the Int. Conf. on Solid State Devices and Materials. 138-139 (2002)

T.Furukawa：“用于区域意识应用的波纹沟道晶体管（CCT）晶体管（CCT）”分机。