Study on Silicon Optical Modulator on Insulator

绝缘体上硅光调制器的研究

• 批准号: 14350189
• 负责人: SUNAMI Hideo
• 金额: $ 9.28万
• 依托单位: HIROSHIMA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14350189/
• 关键词: Optical modulator; SOI; Comb-shaped transistor; Free carrier; Infrared light absorption; Optical waveguide; 透明電極; 赤外吸収; 自由電子赤外光吸収

This research is aiming to realize a silicon optical modulator based on free-carrier absorption. One of the most important key factors to realize the modulator is how much free carriers can be provided for interaction between carriers and infrared light. Thus, comb-shaped MOS transistors were developed and evaluated.In a first trial, the optical modulation for a silicon optical modulator on SOI (silicon-on-insulator) of 1 μm in height and 1 mm in length could not be observed because that incident infrared light (wavelength, λ=1.55μm) slipped out into silicon substrate and heavily-doped polysilicon gate absorbed the light. However, multi-channel MOS transistors were successfully developed and academically proposed.The second trial planning to solve the above issues has not brought about a successful modulation. The main cause is that the strength of noise light running through silicon substrate is more than 1000 times greater than that of signal light coming through inside silicon waveguide causing fatally bad signal-to-noise ratio.Analyzing the experimental, it is estimated that the noise light has to be reduced to great extent. Thus, a device structure with infrared light absorption region in silicon substrate has been proposed. A trench in the substrate filled with carbon black has reduced the noise light efficiently. Another trial to realize the silicon optical modulator with improved structure has been carried out to date.

本研究旨在实现基于自由载流子吸收的硅光调制器。实现调制器最重要的关键因素之一是能够提供多少自由载流子用于载流子与红外光之间的相互作用。因此，开发并评估了梳状MOS晶体管。在第一次试验中，无法观察到高度为1μm、长度为1mm的SOI（绝缘体上硅）上的硅光调制器的光调制，因为入射红外光（波长，λ=1.55μm）滑出到硅衬底中，并且重掺杂多晶硅栅极吸收了光。然而，多沟道MOS晶体管研制成功并在学术上提出。解决上述问题的第二次试验规划并没有带来成功的调制。主要原因是穿过硅衬底的噪声光的强度比穿过硅波导内部的信号光的强度大1000倍以上，导致信噪比非常差。通过实验分析，估计必须大幅度降低噪声光。因此，提出了一种在硅衬底中具有红外光吸收区域的器件结构。基板上的沟槽填充炭黑，有效降低了噪声光。迄今为止，已经进行了另一项尝试，以实现具有改进结构的硅光调制器。

项目成果

A Three-Dimensional MOS Transistor Formation Technique with Crystallographic Orientation-Dependent TMAH Etchant

采用依赖于晶体取向的 TMAH 蚀刻剂的三维 MOS 晶体管形成技术

• 发表时间: 2004
• 期刊: SENSORS and ACTUATORS A : PHYSICAL A111
• 作者: H.Sunami;T.Furukawa;T.Masuda
• 通讯作者: T.Masuda

A High-Aspect Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation

一种高深宽比杂质强化氧化束沟道MOS晶体管硅栅形成技术

• 发表时间: 2004
• 期刊: Jpn.J.Appl.Phys. Vol.43
• 作者: A.Katakami;K.Kobayashi;H.Sunami
• 通讯作者: H.Sunami

An Experimental Analysis of 1.55-μm Infrared Light Propagation in Integrated SOI Structure

集成 SOI 结构中 1.55 μm 红外光传播的实验分析

• 发表时间: 2004
• 期刊: Extended Abstracts of International Symp.on Solid State Devices and Materials No.P7-1
• 作者: M.Kawai

VLSI工学 : 製造プロセス編

VLSI 工程：制造工艺版

• 发表时间: 2006
• 作者: 角南英夫

T Furukawa: "A Proposal of Corrugated-Channel Transistor (CCT) with Vertically-Formed Channels for Area-Conscious Applications"Jpn.J.Appl.Phys.. 42. 2067-2072 (2003)

T Furukawa：“针对区域意识应用的具有垂直形成通道的波纹通道晶体管 (CCT) 的建议”Jpn.J.Appl.Phys.. 42. 2067-2072 (2003)