Rresearch of the invention of SiC system composite material for the high damping capacity material and high temperature.

本研究分别采用PIP法和CVI法制备复合材料，通过材料的密度变化、内耗等因素考察材料的弹性率特性及其对高温的温度可靠性和强度特性，并将其作为一种高衰减能力的材料加以应用；此外，为了改善材料的高温特性，还将暴露在材料表面的碳(C)原子在硅气相反应中与碳化硅反应。增强纤维用尼卡隆纤维(直径为14μm)将500根纤维进行八片楚楚波的片材与三片堆捆扎在一起，用PIP法的基质溶液使酚醛树脂溶液加入碳化硅和碳粉，改变三种混合重量比，制备出厚度为1 mm的碳化硅/碳化硅复合材料。此外，由于I…，苯酚树脂渗透可以重复进行密度得到了较大的改善，最高密度为2.0g/cm~3。CVI法可获得最高密度为2.5g/cm~3。虽然弹性速率随密度的增加有上升的趋势，但PIP法最高可达47 Gpa，CVI法最高可达150 Gpa。而内耗则呈现出随密度增加而减小的趋势。当材料内部缺陷减少时，能量传递改善，认为振动变得容易发生，不利于控制。然而，用化学气相沉积方法在1050℃下制备的材料，在900℃附近可以检测到内耗峰值，并能够获得高衰减能力材料热(900℃或更高)的指示器。由于C暴露在PIP法生产的材料的表层，因此需要抗氧化性。为此，C通过硅的气相反应转化为碳化硅。因此，碳化硅层的厚度增加到0.5μm，能够弯曲，并且强度也能够提高10%。较少

In this research, the composite material was produced using the PIP method or the CVI method, and it investigated about the temperature dependability and the strength property to the characteristic and the high temperature of the rate of elasticity by density change of material, and internal friction, and aimed at the application as a high attenuation ability material.Moreover, in order to improve the high temperature characteristic, also performed Carbon(C) atom exposed to the material surface to SiC at Si gaseous phase reaction. The strengthening fiber made the sheet which carried out eight-sheet Chu-tzu waves by 500 fiber bunches the three-sheet pile using the NICALON filament (SiC : diameter of 14μm), and the matrix solution of the PIP method made phenol resin solution add SiC powder and C powder, changed three kinds of the mixed weight ratio, and produced the SiC/SiCpowC composite material of 1mm thickness. Furthermore, phenol resin osmosis was able to be repeated because of the i … More mprovement in density, and highest density 2.0 g/cm^3 was able to be obtained. By the CVI method, it was able to obtain to highest density 2.5 g/cm^3. Although the rate of elasticity showed the tendency to go up with the increase in density, by the PIP method, 47GPa were obtained and the CVI method 150GPa at the maximum. On the other hand, internal friction showed the tendency which decreases with the increase in density. When the internal defect in material decreased, the energy transfer of this improved, it was considered for vibration to become easy to take place, and did not contribute to control. However, with the material produced at 1050℃ by the CVI method, the peak of internal friction could be detected near 900℃, and the indicator of a high attenuation ability material hot (900℃ or more) was able to be acquired. It bent at this time and, as for intensity, the high intensity of 450MPa was obtained.Since C is exposed to the surface layer of the material produced by the PIP method, to oxidation resistance is needed. For this reason, C was made to convert into SiC by the gaseous phase reaction of Si. Consequently, the thickness of a SiC layer increased to 0.5μm, was able to be bent, and was also able to raise intensity 10%. Less