Rresearch of the invention of SiC system composite material for the high damping capacity material and high temperature.

本研究采用PIP法或CVI法制备复合材料，通过材料的密度变化和内摩擦，研究了复合材料对弹性率特性和高温的温度可靠性和强度性能，旨在作为一种高衰减能力材料应用。此外，为了提高材料的高温特性，还进行了碳(C)原子暴露在材料表面与SiC在Si气相反应。以NICALON长丝（SiC：直径14μm）为材料，用500根纤维束制成可进行8片Chu-tzu波的片状材料，在PIP法的基体溶液中加入SiC粉和C粉，改变三种混合重量比，制得厚度为1mm的SiC/SiCpowC复合材料。此外，苯酚树脂渗透可以重复进行，因为它的密度有很大的提高，最高密度可以达到2.0 g/cm^3。通过CVI法，其最高密度可达2.5 g/cm^3。虽然弹性率随密度的增加呈上升趋势，但PIP法最大可达47GPa， CVI法最大可达150GPa。另一方面，内摩擦随密度的增加而减小。当材料内部缺陷减少，其能量传递得到改善时，认为振动变得容易发生，不利于控制。而用CVI法在1050℃下制备的材料，在900℃附近可以检测到内摩擦峰值，可以获得高衰减能力材料热（900℃以上）的指标。此时弯曲，强度达到450MPa的高强度。由于C暴露在PIP法生产的材料的表层，因此需要抗氧化性。因此，通过Si的气相反应使C转化为SiC。因此，SiC层厚度增加到0.5μm，能够弯曲，强度也能提高10%。少

In this research, the composite material was produced using the PIP method or the CVI method, and it investigated about the temperature dependability and the strength property to the characteristic and the high temperature of the rate of elasticity by density change of material, and internal friction, and aimed at the application as a high attenuation ability material.Moreover, in order to improve the high temperature characteristic, also performed Carbon(C) atom exposed to the material surface to SiC at Si gaseous phase reaction. The strengthening fiber made the sheet which carried out eight-sheet Chu-tzu waves by 500 fiber bunches the three-sheet pile using the NICALON filament (SiC : diameter of 14μm), and the matrix solution of the PIP method made phenol resin solution add SiC powder and C powder, changed three kinds of the mixed weight ratio, and produced the SiC/SiCpowC composite material of 1mm thickness. Furthermore, phenol resin osmosis was able to be repeated because of the i … More mprovement in density, and highest density 2.0 g/cm^3 was able to be obtained. By the CVI method, it was able to obtain to highest density 2.5 g/cm^3. Although the rate of elasticity showed the tendency to go up with the increase in density, by the PIP method, 47GPa were obtained and the CVI method 150GPa at the maximum. On the other hand, internal friction showed the tendency which decreases with the increase in density. When the internal defect in material decreased, the energy transfer of this improved, it was considered for vibration to become easy to take place, and did not contribute to control. However, with the material produced at 1050℃ by the CVI method, the peak of internal friction could be detected near 900℃, and the indicator of a high attenuation ability material hot (900℃ or more) was able to be acquired. It bent at this time and, as for intensity, the high intensity of 450MPa was obtained.Since C is exposed to the surface layer of the material produced by the PIP method, to oxidation resistance is needed. For this reason, C was made to convert into SiC by the gaseous phase reaction of Si. Consequently, the thickness of a SiC layer increased to 0.5μm, was able to be bent, and was also able to raise intensity 10%. Less