Rresearch of the invention of SiC system composite material for the high damping capacity material and high temperature.

本研究以PIP法或CVI法制造复合材料为对象，研究材料的密度变化弹性率特性和高温强度特性的温度依赖性和内耗，并以作为高衰减能力材料的应用为目标，另外，为了改善高温特性，还进行了暴露于材料表面的碳（C）原子与SiC在Si上的气相反应。增强纤维采用NICALON长丝（SiC：直径为14 μ m）经500束纤维束三片堆制成8片楚波的片材，PIP法的基体溶液采用酚醛树脂溶液加入SiC粉和C粉，改变三种混合重量比，制成厚度为1mm的SiC/SiCpowC复合材料。此外，由于苯酚树脂渗透是可重复的， 关于我们 密度提高，最高密度可达2.0g/cm^3。通过CVI方法，它能够获得最高密度2.5 g/cm^3。虽然弹性率随密度的增加而增加，但PIP法测得的弹性率最大为47GPa，CVI法测得的弹性率最大为150GPa。另一方面，随着密度的增加，材料的内耗呈现出减小的趋势。当材料内部缺陷减少时，这种能量传递得到改善，被认为是振动变得容易发生，并且无助于控制。然而，对于通过CVI方法在1050 ℃下制备的材料，可以在900 ℃附近检测到内耗峰，并且能够获得高衰减能力材料热（900 ℃或更高）的指标。此时弯曲，强度达到450MPa的高强度。由于PIP法制造的材料表面层暴露有C，因此需要抗氧化性。因此，通过Si的气相反应使C转化为SiC。因此，SiC层的厚度增加到0.5 μ m，能够弯曲，并且还能够将强度提高10%。少

In this research, the composite material was produced using the PIP method or the CVI method, and it investigated about the temperature dependability and the strength property to the characteristic and the high temperature of the rate of elasticity by density change of material, and internal friction, and aimed at the application as a high attenuation ability material.Moreover, in order to improve the high temperature characteristic, also performed Carbon(C) atom exposed to the material surface to SiC at Si gaseous phase reaction. The strengthening fiber made the sheet which carried out eight-sheet Chu-tzu waves by 500 fiber bunches the three-sheet pile using the NICALON filament (SiC : diameter of 14μm), and the matrix solution of the PIP method made phenol resin solution add SiC powder and C powder, changed three kinds of the mixed weight ratio, and produced the SiC/SiCpowC composite material of 1mm thickness. Furthermore, phenol resin osmosis was able to be repeated because of the i … More mprovement in density, and highest density 2.0 g/cm^3 was able to be obtained. By the CVI method, it was able to obtain to highest density 2.5 g/cm^3. Although the rate of elasticity showed the tendency to go up with the increase in density, by the PIP method, 47GPa were obtained and the CVI method 150GPa at the maximum. On the other hand, internal friction showed the tendency which decreases with the increase in density. When the internal defect in material decreased, the energy transfer of this improved, it was considered for vibration to become easy to take place, and did not contribute to control. However, with the material produced at 1050℃ by the CVI method, the peak of internal friction could be detected near 900℃, and the indicator of a high attenuation ability material hot (900℃ or more) was able to be acquired. It bent at this time and, as for intensity, the high intensity of 450MPa was obtained.Since C is exposed to the surface layer of the material produced by the PIP method, to oxidation resistance is needed. For this reason, C was made to convert into SiC by the gaseous phase reaction of Si. Consequently, the thickness of a SiC layer increased to 0.5μm, was able to be bent, and was also able to raise intensity 10%. Less