权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Study on Interface Properties of Ti-Ni Shape Memory Films Sputtered on Si substrate

Si基体溅射Ti-Ni形状记忆薄膜界面性能研究

基本信息

批准号：
12650703
负责人：
YAJIMA Zenjiro
金额：
$ 1.86万
依托单位：
Kanazawa Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

项目摘要

Ti-50at%Ni shape memory films with a thickness 1 μm were deposited on Si(100) substrate, using a D. C. magnetron sputtering system. Several depositions were made at different substrate temperatures, ranging from room temperature to 658 K. The films deposited over 523 K were completely crystalline. Cross-sectional TEM images revealed that the growth of the film is a 200nm diameter columnar. Selected area electron diffraction patterns show that B2 austenites transform to B19' martensites. Heusler-type NiMnGa ferromagnetic shape memory alloy (FMSMA) films were also deposited by DC magnetron sputtering, on silicone (100) cantilever-type substrates. NiMnGa FMSMA films show good ferromagnetic and shape memory properties if the substrate is heated above 623K or if films deposited at room temperature are annealed above 873K. The growth of the film is 200nm diameter columnar. Cross-sectional TEM images show typical martensitic variants while the selected area electron diffraction pattern suggests an orthorhombic structure. The thermo-mechanical spectroscopy data were measured with an acoustic elastometer permitting the simultaneous measurement of damping, modulus and the cantilever displacement as a function of temperature. It can be concluded that both of a full transition and large displacement develop in films deposited at 658K and in films deposited at room temperature and annealed at 873K.

使用直流磁控溅射系统在 Si(100) 衬底上沉积厚度为 1 μm 的 Ti-50at%Ni 形状记忆薄膜。在不同的衬底温度（从室温到 658 K）下进行了多次沉积。超过 523 K 沉积的薄膜是完全结晶的。横截面TEM图像显示薄膜生长为直径200nm的柱状。选区电子衍射图显示 B2 奥氏体转变为 B19' 马氏体。 Heusler 型 NiMnGa 铁磁形状记忆合金 (FMSMA) 薄膜也通过直流磁控溅射沉积在硅 (100) 悬臂型基板上。如果将基板加热到 623K 以上，或者如果在室温下沉积的薄膜在 873K 以上进行退火，NiMnGa FMSMA 薄膜将表现出良好的铁磁和形状记忆特性。生长的薄膜呈直径200nm的柱状。横截面 TEM 图像显示了典型的马氏体变体，而选定区域的电子衍射图案表明了斜方结构。热机械光谱数据是用声弹性计测量的，可以同时测量阻尼、模量和悬臂梁位移随温度的变化。可以得出结论，在 658K 沉积的薄膜和在室温沉积并在 873K 退火的薄膜中都发生了完全转变和大位移。