Microwave Sintering of Partially Stabilized Zirconia Using a Domestic Microwave Oven
使用家用微波炉微波烧结部分稳定氧化锆
基本信息
- 批准号:12650828
- 负责人:
- 金额:$ 2.18万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2000
- 资助国家:日本
- 起止时间:2000 至 2001
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Partially stabilized zirconia (PSZ) powders were fully densified by microwave heating using a domestic microwave oven. The pressed powder compacts of PSZ were sandwiched between two ZnO-MnO_2-Al_2O_3 (ZMA) ceramic plates acting as preheaters in the microwave oven and put in the oven. PSZ ceramics fabricated with the domestic microwave oven for 16 min exhibited a density of 5.94 g/cm^3, which is approximately equal to the density of bodies sintered at 1350 ℃ for 4 h or at 1400 ℃ for 16 min by the conventional furnace method. The PSZ pellet pre-heated by the ZMA ceramics more easily absorbed the microwave energy and self-heated to a higher temperature. The microwave heating enhanced not only the densification but also the grain growth. From this viewpoint, it was judged that the atomic diffusion should be promoted by irradiation of the microwave.The bending strength of specimens sintered by microwave heating was comparable with that sintered by a conventional method (1450 ℃, 4 h). From this viewpoint, it is judged that this sintering method using an domestic microwave oven is better than the conventional method for the low energy consumption and low cost.The similar method was applied on the sintering of lead zirconate titanate (PZT). The dense specimens were obtained for 11 min of driving a domestic microwave oven. Sintered silicon carbide was used as a preheater.
利用家用微波炉对部分稳定氧化锆(PSZ)粉末进行了微波加热,使其完全致密化。将压制好的PSZ粉末压块夹在作为预热器的ZMA陶瓷板之间,放入微波炉中加热。用家用微波炉加热16 min制得的PSZ陶瓷密度为5.94 g/cm^3,近似等于用传统炉法在1350℃下烧结4 h或1400℃下烧结16 min的体的密度。经ZMA陶瓷预热的PSZ球团更容易吸收微波能量并自加热到更高的温度。微波加热不仅促进了致密化,而且促进了晶粒的长大。从这一观点出发,认为微波辐照应促进原子的扩散。微波加热烧结试样的抗弯强度与常规方法烧结试样(1450℃,4 h)相当。从这个角度出发,认为这种用家用微波炉烧结法能耗低、成本低,优于传统烧结法。将类似的方法应用于锆钛酸铅(PZT)烧结。用家用微波炉加热11 min,得到致密的试样。采用烧结碳化硅作为预热器。
项目成果
期刊论文数量(19)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
S. Fujitsu and H. Sekiguchi: "Piezoelectric Properties of Transparent Zinc Oxide Thin Plate with C-axis"Key Engineering Materials (Electroceramics in Japan). 216. 39-42 (2001)
S. Fujitsu和H. Sekiguchi:“C轴透明氧化锌薄板的压电特性”关键工程材料(日本电陶瓷)。
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S.Fugitsu, H.Hayashi: "Sinteriy of purtially Stabilyel zirconia by Microwave Hcalic using ZnO-MnO_2-Al_2O_3 Plaes in a Pomeslie Microwave Oven-Self Heaby and Microstracture of PSZ"Ceream. Trans.. 108. 63-70 (2000)
S.Fugittsu,H.Hayashi:“在 Pomeslie 微波炉中使用 ZnO-MnO_2-Al_2O_3 Plaes 通过微波 Hcalic 烧结纯稳定氧化锆 - Self Heaby 和 PSZ 微结构”Ceream。
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S.Fvjitsu et.al: "Sintering of Partially Stabilized Zirconia by Microwave Heating Using ZnO-MnO_2-Al_2O_3 Plates in a Domestic Microwave oven"J.Am.Ceram.Soc. 83. 2085-2087 (2000)
S.Fvjitsu 等人:“在家用微波炉中使用 ZnO-MnO_2-Al_2O_3 板通过微波加热烧结部分稳定的氧化锆”J.Am.Ceram.Soc。
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S. Fujitsu and T. Hayashi: "Sintering of Partially Stabilized Zirconia by Microwave Heating Using ZnO MnO_2-Al_2O_3 Plates in a Domestic Microwave Oven -Self-Heating and Microstructure of PSZ"Ceramic Transaction. 108. 63-70 (2000)
S. Fujitsu 和 T. Hayashi:“在家用微波炉中使用 ZnO MnO_2-Al_2O_3 板通过微波加热烧结部分稳定氧化锆 - 自加热和 PSZ 的微观结构”陶瓷交易。
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FUJITSU Satoru其他文献
FUJITSU Satoru的其他文献
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{{ truncateString('FUJITSU Satoru', 18)}}的其他基金
Optical and Chemical Function Developments for Oxide Semiconductor Device using Substrate of Oriented Zinc Oxide Crystal
使用定向氧化锌晶体衬底的氧化物半导体器件的光学和化学功能开发
- 批准号:
14350357 - 财政年份:2002
- 资助金额:
$ 2.18万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of Piezoelectric Zinc Oxide with Complex Configuration
复杂结构压电氧化锌的研制
- 批准号:
09555196 - 财政年份:1997
- 资助金额:
$ 2.18万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Control of Photo-Reduction of Zinc Oxide with Piezoelectric Property by Electrical Field
电场控制压电氧化锌光还原
- 批准号:
08650996 - 财政年份:1996
- 资助金额:
$ 2.18万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Preparation of transparent ZnO ceramic with Crystal-Axis Orientation and Development of Functional Materials Combining Piezo electric and Semiconducting Propertes
晶轴取向透明ZnO陶瓷的制备及压电与半导体性能相结合的功能材料的开发
- 批准号:
03650633 - 财政年份:1991
- 资助金额:
$ 2.18万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
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