Preparation of transparent ZnO ceramic with Crystal-Axis Orientation and Development of Functional Materials Combining Piezo electric and Semiconducting Propertes
晶轴取向透明ZnO陶瓷的制备及压电与半导体性能相结合的功能材料的开发
基本信息
- 批准号:03650633
- 负责人:
- 金额:$ 1.15万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for General Scientific Research (C)
- 财政年份:1991
- 资助国家:日本
- 起止时间:1991 至 1992
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The technique to obtain the large sample(7mm cube) of transparent ZnO crystal with high crystal-axis orientation has been established. That was attained by using a crystal oriented ZnO as a substrate and its rotation. The Li_2O doping was examined to prepare the Piezo electric material. The only method for Li_2O was the diffusion at high temperature. The small amount of LiCO_3 was painted on the surface of the sample and heated at 800-900゚C. The recicling this method was effective to obtain the homogeneous insulator. The electrical-mechanical coupling constant depended on the degree of axis orientation strongly and inhomogenity slightly. The high crystal axis oriented sample without the X-ray diffraction peak from other than (001) and with high resistivity to be 100MOMEGA cm showed high electrical-mechanical coupling constant same as the reported value of single crystal. The light excited current depended on the bias voltage and its applied direction.The grain boundary model was prepared by appling this method. The prepared ZnO by this method has a c-axis preferencial orientation along to the growth direction. The sample with clear boundary was prepared by using 2 step growth method with the A or C plane as the substrate. It is clear that oxygen plays an important role to develop the potential barrier along the ZnO grain boundary. This prepared sample was used to discuss the effect of lattice matching on such a barrier. The potential barrier was observed in the sample with C-C junction at 90K. The sample with C-A junction which has lattice mismatching did not show the potential barrier. This result suggest that we should discuss the potential barrier with considerration for not only the excess oxygen but also the Piezo effect.
建立了高晶轴取向透明氧化锌晶体大样品(7 mm立方体)的制备工艺。这是通过使用晶体取向的氧化锌作为衬底和它的旋转实现的。考察了Li_2O掺杂对制备压电材料的影响。Li_2O的唯一方法是高温扩散。在样品表面涂上少量的LiCO_3,在800~900゚C下加热,可以有效地获得均匀的绝缘体。机电耦合常数强烈地依赖于轴的取向程度,而与轴的不均匀性关系不大。没有非(001)晶面X射线衍射峰的高晶轴取向样品,其电阻率高达100MOMEGA cm,表现出与文献报道的单晶相同的高机电耦合常数。光激发电流依赖于偏置电压及其施加方向,应用该方法建立了晶界模型。用这种方法制备的氧化锌沿生长方向有c轴择优取向。以A面或C面为衬底,采用两步生长法制备了边界清晰的样品。由此可见,氧对氧化锌晶界势垒的形成起着重要的作用。用所制备的样品讨论了晶格匹配对这种势垒的影响。在90K,具有C-C结的样品中观察到了势垒。具有晶格失配的C-A结的样品没有出现势垒。这一结果表明,在讨论势垒时,不仅要考虑过量氧,还要考虑Piezo效应。
项目成果
期刊论文数量(5)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
ed. Editing Committee on Handbook of Chemical Terms S.Fujitsu et al: Gihodo. Hand Book of Chemical Terms, 1059 (1992)
编辑。
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伊藤 秀高,梶田 道代 藤津 悟,柳田 博明: "配向性酸化亜鉛における電気電導性の測定" 日本セラミックス協会学術論文誌. 100. 823-825 (1992)
Hidetaka Ito、Michiyo Kajita、Satoru Fujitsu、Hiroaki Yanagita:“定向氧化锌中电导率的测量”日本陶瓷学会杂志 100. 823-825 (1992)。
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化学用語辞典編集委員会編藤津悟ほか103名執筆: "化学用語辞典" 技報堂, 1059 (1992)
化学术语词典编辑委员会编,富士通悟等103人着:《化学术语词典》Gihodo,1059(1992)
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S.Fujitsu, H.Hasegawa and H.Yanagida: "Oxygen in the Grain Boundary of Semiconducting BaTiO_3" Proc.International Conference on Electrical Components and Materials. 338-342 (1992)
S.Fujitsu、H.Hasekawa 和 H.Yanagida:“半导体 BaTiO_3 晶界中的氧”Proc.国际电气元件和材料会议。
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- 影响因子:0
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H.Ito,S.Fujitsu M.Miyayama,K.Koumoto H.Yanagida: "Molecular Recognition by a p-n Semiconductor Contact" J.Ceram.Soc.Jpn.100. 350-352 (1992)
H.Ito、S.Fujitsu M.Miyayama、K.Koumoto H.Yanagida:“p-n 半导体接触的分子识别”J.Ceram.Soc.Jpn.100。
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{{ truncateString('FUJITSU Satoru', 18)}}的其他基金
Optical and Chemical Function Developments for Oxide Semiconductor Device using Substrate of Oriented Zinc Oxide Crystal
使用定向氧化锌晶体衬底的氧化物半导体器件的光学和化学功能开发
- 批准号:
14350357 - 财政年份:2002
- 资助金额:
$ 1.15万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Microwave Sintering of Partially Stabilized Zirconia Using a Domestic Microwave Oven
使用家用微波炉微波烧结部分稳定氧化锆
- 批准号:
12650828 - 财政年份:2000
- 资助金额:
$ 1.15万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of Piezoelectric Zinc Oxide with Complex Configuration
复杂结构压电氧化锌的研制
- 批准号:
09555196 - 财政年份:1997
- 资助金额:
$ 1.15万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Control of Photo-Reduction of Zinc Oxide with Piezoelectric Property by Electrical Field
电场控制压电氧化锌光还原
- 批准号:
08650996 - 财政年份:1996
- 资助金额:
$ 1.15万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
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