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Optical and Chemical Function Developments for Oxide Semiconductor Device using Substrate of Oriented Zinc Oxide Crystal

使用定向氧化锌晶体衬底的氧化物半导体器件的光学和化学功能开发

基本信息

批准号：
14350357
负责人：
FUJITSU Satoru
金额：
$ 8.19万
依托单位：
Shonan Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2004
项目状态：
已结题

项目摘要

Highly oriented zinc oxide crystal was prepared by applying vapor transport method. The oxide semiconductor device was prepared using this crystal as a substrate.Zinc oxide is an n-type semiconductor with wide band gap (3.2 eV). Strontium cupper oxide (SrCu_2O_2) is p-type semiconductor with wide band gap (3.1 eV). In this work, the substrate was prepared by mirror finishing the ZnO crystal, and SrCu_2O_2 thin film was obtained by PLD or sputtering method. The p-n junction prepared by PLD method showed LED characteristic emitting UV light. By using crystal axis oriented ZnO bulk, we can select 3 kinds of surface, Zn-,O- and A-face. The Zn- and the O- faces are polar faces and the A-face (parallel to c-axis) is a non-polar fece. Each face has different characteristic structurally and electrically. Using the O-fece, the highest rectifying characteristic was obtained. The gas sensing property of this device was measured. This device showed the sensing characteristic not only hydrogen and carbon monoxide but also toluene. Detecting the VOC(volatilizing organic compound) gas as toluene indicates the high oxidizing ability of this device composed by p-n junction of semiconducting oxides with the wide band gap.The EL device using ZnO crystal with high resistivity was also prepared. ZnSiO_4:Mn thin film was employed as a luminous. ZnO with high resistivity shows piezo-electric property. Though this device should show the EL property tuned by piezo-electric vibration, the enough luminescence has not been obtained.

采用气相传输法制备了高取向氧化锌晶体。使用该晶体作为衬底制备了氧化物半导体器件。氧化锌是具有宽带隙（3.2 eV）的n型半导体。氧化锶铜(SrCu_2O_2)是具有宽带隙(3.1 eV)的p型半导体。本工作通过对ZnO晶体进行镜面加工制备衬底，并通过PLD或溅射方法获得SrCu_2O_2薄膜。采用PLD方法制备的p-n结表现出发射紫外光的LED特性。通过使用晶轴取向的ZnO块体，我们可以选择3种表面：Zn面、O面和A面。 Zn 面和 O 面是极性面，A 面（平行于 c 轴）是非极性面。每个面在结构和电气上都有不同的特性。使用O-fee，获得了最高的整流特性。测量了该装置的气敏性能。该装置不仅表现出氢气和一氧化碳的传感特性，而且还表现出甲苯的传感特性。检测到VOC（挥发性有机化合物）气体为甲苯，表明该器件由宽带隙半导体氧化物p-n结组成，具有高氧化能力。还制备了采用高电阻率ZnO晶体的EL器件。采用ZnSiO_4:Mn薄膜作为发光体。 ZnO具有高电阻率，表现出压电特性。尽管该器件应表现出通过压电振动调节的EL特性，但尚未获得足够的发光。

项目成果

期刊论文数量（19）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Electroceramics in Japan VI

日本电陶瓷VI

DOI：
发表时间：
2002
期刊：
影响因子：
0
作者：
T.Kimura;T.Takenaka;S.Fujitsu;K.Shinozaki Ed.
通讯作者：
K.Shinozaki Ed.

H.Mizoguchi, M.Hirano, S.Fujitsu, T.Takeuchi, K.Ueda, H.Hosono: "ZnRh2O_4 : A p-type semiconducting oxide with a Valence Band Composed of a Low Spin State of RH^<3+> in a 4d_6 Configutation"Appl.Phys.Lett.. 80. 1207-1209 (2002)

H.Mizoguchi、M.Hirano、S.Fujitsu、T.Takeuchi、K.Ueda、H.Hosono：“ZnRh2O_4：一种具有由 RH^<3 > 低自旋态组成的价带的 p 型半导体氧化物

DOI：
发表时间：
期刊：
影响因子：
0
作者：
通讯作者：

T.Kimura, K.Koumoto, T.Takenaka, S.Fujitsu: "Asian Ceramic Science for Electronics"Trans Tech Publications. 326 (2002)

T.Kimura、K.Koumoto、T.Takenaka、S.Fujitsu：“亚洲电子陶瓷科学”Trans Tech 出版物。

DOI：
发表时间：
期刊：
影响因子：
0
作者：
通讯作者：

Joining of single-crystal sapphire to alumina using silicate glasses

DOI：
10.2109/jcersj.111.448
发表时间：
2003
期刊：
Journal of the Ceramic Society of Japan
影响因子：
1.1
作者：
S. Fujitsu;S. Ono;Hiroaki Nomura;M. Komatsu;Katuhiro Yamagiwa;E. Saiz;A. P. Tomsia
通讯作者：
S. Fujitsu;S. Ono;Hiroaki Nomura;M. Komatsu;Katuhiro Yamagiwa;E. Saiz;A. P. Tomsia

Color Change of Tungsten Phosphate Glass by Hydrogen Penetration

氢渗透导致磷酸钨玻璃变色