Development of Piezoelectric Zinc Oxide with Complex Configuration
Development of Piezoelectric Zinc Oxide with Complex Configuration
批准号:
09555196
负责人:
FUJITSU Satoru
金额:
$8.32万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1999
中文摘要
In the research work,piezoelectric properties have been measured for zinc oxide with transparency,crystal c-axis orientation and high resistivity formed by doping of Li D22 D2O. The followingresults been obtained,especially for the joining and microprocessing the Zno crystal.1) Large transparent specimens ofpolycrystalline zinc oxide with c-axis orientation prepared by the vapor transport method. thecut and polished specimen was transparent for recognizing the distant view. In the X-ray diffractionmeasurement on the vertical plane to the growing direction这不是监测specimens were (00l) plane.监测specimens weren-type semiconductor with resistivity below 50Ω cm at room temperature. By doping of Li D22 D2O,its resistivity increased remarkably to be > 10g Ωcm and then the doped material showed thepiezoelectric characteristics. The electromechanical coupling constant depended strongly on Thecrystal axis orientation. The…optimum specimen showed the comparable values to the reported data of the singlecrystal. A couple of the obtained piezoelectric ZnO was joined directly using the hot press方法。The piezoelectric filter property observed in The sample with The junction type of apiezoelectric transformer but the acceleration of the voltage could not be observed in such aspecimen.2) The Li D22 D2O doped ZnO thin film was prepared by YAG laser abrasion method. Theprecise comb types of the Pt electrode was attached on the SiO D22 - D2 substrate. To control theorientation,the high voltage was applied on this electrode and the thin film was prepared. Though the electrodewas broken during this process我们recognized the alumina coating was effective to guard the electrode.3) Partially stabilizedzirconia(PSZ) powders were microwave heating using a domestic microwave oven. Thepressed powder compacts of PSZ were sandwiched between two ZnO-MnO - D22 - al - D22 - D2O - D23 - D2(ZMA) ceramic plates acting as preheaters in the microwave oven and put in the oven. PSZ ceramicsfabricated with the domestic microwave oven for 16min exhibited a density of 5.94 g/cmwhich is approximately equal to the density of bodies sintered at 1350℃for 4 h or at 1400℃for 16min by the conventional furnace方法. the PSZ pellet pre-heated by the ZMA ceramics more easilyabsorbed the microwave energy and self-heated to a higher temperature. the microwave heatingenhanced not the densification but the grain growth. From this viewpoint,这是不受微波干扰的原子辐射应该被保护
英文摘要
In the research work, the piezoelectric properties have been measured for zinc oxide with transparency, crystal c-axis orientation and high resistivity formed by doping of LiィイD22ィエD2O. The following results have been obtained, especially for the joining and micro-processing the Zno crystal.1) Large transparent specimens of polycrystalline zinc oxide with c-axis orientation were prepared by the vapor transport method. The cut and polished specimen was transparent for recognizing the distant view. In the X-ray diffraction measurement on the vertical plane to the growing direction, it was not observed except for the reflection peak from (00l) plane. The obtained specimens were n-type semiconductor with resistivity below 50 Ωcm at room temperature. By doping of LiィイD22ィエD2O, its resistivity increased remarkably to be >10 GΩcm and then the doped material showed the piezoelectric characteristics. The electromechanical coupling constant depended strongly on the crystal axis orientation. The … More optimum specimen showed the comparable values to the reported data of the single crystal. A couple of the obtained piezoelectric ZnO was joined directly using the hot press method. The piezoelectric filter property was observed in the sample with the junction type of a piezoelectric transformer but the acceleration of the voltage could not be observed in such a specimen.2) The LiィイD22ィエD2O doped ZnO thin film was prepared by YAG laser abrasion method. The precise comb types of the Pt electrode was attached on the SiOィイD22ィエD2 substrate. To control the orientation, the high voltage was applied on this electrode and the thin film was prepared. Though the electrode was broken during this process, we recognized that the alumina coating was effective to guard the electrode.3) Partially stabilized zirconia(PSZ) powders were fully densified by microwave heating using a domestic microwave oven. The pressed powder compacts of PSZ were sandwiched between two ZnO-MnOィイD22ィエD2-AlィイD22ィエD2OィイD23ィエD2 (ZMA) ceramic plates acting as preheaters in the microwave oven and put in the oven. PSZ ceramics fabricated with the domestic microwave oven for 16 min exhibited a density of 5.94 g/cmィイD13ィエD1, which is approximately equal to the density of bodies sintered at 1350℃ for 4 h or at 1400℃ for 16 min by the conventional furnace method. The PSZ pellet pre-heated by the ZMA ceramics more easily absorbed the microwave energy and self-heated to a higher temperature. The microwave heating enhanced not only the densification but also the grain growth. From this viewpoint, it was judged that the atomic diffusion should be promoted by irradiation of the microwave. Less
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S.Fujitsu et al.: "Joining of Piezoelectric Zinc Oxide" Proc.Electronic Division Meeting of Cer.Soc.Jpn. (印刷中). (1999)
S.Fujitsu 等人:“压电氧化锌的加入”Proc.Soc.Jpn 的电子部门会议(1999 年出版)。
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H.Mizoguchi, K.Ueda, H.Kawazoe, T.Omata, S.Fujitsu: "New Mixed-Valence Oxides of Bismuth : Bi_<1-x>Y_xO_<1.5+8> (x=0.4)"J. Mater. Chem.. 7. 943-946 (1997)
H.Mizoguchi、K.Ueda、H.Kawazoe、T.Omata、S.Fujitsu:“铋的新型混合价氧化物:Bi_<1-x>Y_xO_<1.5 8> (x=0.4)”J。
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S.Fujitsu: "Piezoelectric Property and Joining of the Crystal Axis Oriented Zinc Oxide"Ceramic Data Book(Kogyo Seihin Gijutsu Kyokai). 99. 199-203 (1999)
S.Fujitsu:“晶轴取向氧化锌的压电特性和接合”陶瓷数据书(Kogyo Seihin Gijutsu Kyokai)。
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S.Fujitsu, K.Koumoto, H.Yanagida, Y.Watanabe, H.Kawazoe: "Change in the Oxidation State of the Adsorbed Oxygen Equilibrated at 25°C on ZnO Surface during Room Temperature Annealing after Rapid Quenching"Jpn. J. Appl. Phys.. 38. 1534-1538 (1999)
S.Fujitsu、K.Koumoto、H.Yanagida、Y.Watanabe、H.Kawazoe:“快速淬火后室温退火期间 ZnO 表面在 25°C 平衡的吸附氧的氧化态变化”Jpn。应用物理.. 38. 1534-1538 (1999)
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H.Mizoguchi, K.Ueda, H.Kawazoe, T.Omata and S.Fujitsu: "New Mixed-Valence Oxides of Bismuth : BiィイD21-xィエD2YィイD2xィエD2OィイD21.5+δィエD2(x=0.4)"J.Mater.Chem.. 7. 943-946 (1997)
H.Mizoguchi、K.Ueda、H.Kawazoe、T.Omata 和 S.Fujitsu:“铋的新型混合价氧化物:BiD21-xD2YD2xD2OD21.5+ δD2(x=0.4)”J.Mater.Chem.. 7 943-946(1997)
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共 6 条
Optical and Chemical Function Developments for Oxide Semiconductor Device using Substrate of Oriented Zinc Oxide Crystal
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批准号:14350357
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项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$8.19万
-
财政年份:2002
-
负责人:FUJITSU Satoru
-
依托单位:
Microwave Sintering of Partially Stabilized Zirconia Using a Domestic Microwave Oven
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批准号:12650828
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.18万
-
财政年份:2000
-
负责人:FUJITSU Satoru
-
依托单位:
Control of Photo-Reduction of Zinc Oxide with Piezoelectric Property by Electrical Field
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批准号:08650996
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.41万
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财政年份:1996
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负责人:FUJITSU Satoru
-
依托单位:
Preparation of transparent ZnO ceramic with Crystal-Axis Orientation and Development of Functional Materials Combining Piezo electric and Semiconducting Propertes
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批准号:03650633
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.15万
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财政年份:1991
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负责人:FUJITSU Satoru
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依托单位:
海外基金