Development of Piezoelectric Zinc Oxide with Complex Configuration

复杂结构压电氧化锌的研制

• 批准号: 09555196
• 负责人: FUJITSU Satoru
• 金额: $ 8.32万
• 依托单位: Shonan Institute of Technology,Faculty of Engineering
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09555196/
• 关键词: piezoeletric; zinc oxide; micro-processing; filter; junction; 電極

In the research work, the piezoelectric properties have been measured for zinc oxide with transparency, crystal c-axis orientation and high resistivity formed by doping of LiィイD22ィエD2O. The following results have been obtained, especially for the joining and micro-processing the Zno crystal.1) Large transparent specimens of polycrystalline zinc oxide with c-axis orientation were prepared by the vapor transport method. The cut and polished specimen was transparent for recognizing the distant view. In the X-ray diffraction measurement on the vertical plane to the growing direction, it was not observed except for the reflection peak from (00l) plane. The obtained specimens were n-type semiconductor with resistivity below 50 Ωcm at room temperature. By doping of LiィイD22ィエD2O, its resistivity increased remarkably to be >10 GΩcm and then the doped material showed the piezoelectric characteristics. The electromechanical coupling constant depended strongly on the crystal axis orientation. The … More optimum specimen showed the comparable values to the reported data of the single crystal. A couple of the obtained piezoelectric ZnO was joined directly using the hot press method. The piezoelectric filter property was observed in the sample with the junction type of a piezoelectric transformer but the acceleration of the voltage could not be observed in such a specimen.2) The LiィイD22ィエD2O doped ZnO thin film was prepared by YAG laser abrasion method. The precise comb types of the Pt electrode was attached on the SiOィイD22ィエD2 substrate. To control the orientation, the high voltage was applied on this electrode and the thin film was prepared. Though the electrode was broken during this process, we recognized that the alumina coating was effective to guard the electrode.3) Partially stabilized zirconia(PSZ) powders were fully densified by microwave heating using a domestic microwave oven. The pressed powder compacts of PSZ were sandwiched between two ZnO-MnOィイD22ィエD2-AlィイD22ィエD2OィイD23ィエD2 (ZMA) ceramic plates acting as preheaters in the microwave oven and put in the oven. PSZ ceramics fabricated with the domestic microwave oven for 16 min exhibited a density of 5.94 g/cmィイD13ィエD1, which is approximately equal to the density of bodies sintered at 1350℃ for 4 h or at 1400℃ for 16 min by the conventional furnace method. The PSZ pellet pre-heated by the ZMA ceramics more easily absorbed the microwave energy and self-heated to a higher temperature. The microwave heating enhanced not only the densification but also the grain growth. From this viewpoint, it was judged that the atomic diffusion should be promoted by irradiation of the microwave. Less

在研究工作中，测量了通过掺杂LiiiD22iiD2O形成的具有透明性、晶体c轴取向和高电阻率的氧化锌的压电特性。特别是对于ZnO晶体的连接和微加工，取得了以下成果。1)采用气相传输法制备了c轴取向的大尺寸透明多晶氧化锌样品。切割和抛光的标本是透明的，可以识别远处的景色。在与生长方向垂直的平面上的X射线衍射测量中，除了来自(00l)面的反射峰之外没有观察到。所得样品为n型半导体，室温下电阻率低于50Ωcm。通过掺杂LiィイD22ィエD2O，其电阻率显着增加，达到>10 GΩcm，掺杂后的材料表现出压电特性。机电耦合常数很大程度上取决于晶轴方向。最佳样品显示出与单晶报告数据相当的值。使用热压法直接将所获得的压电ZnO 接合在一起。在具有压电变压器结型的样品中观察到了压电滤波器特性，但在这种样品中观察不到电压的加速。2)采用YAG激光烧蚀法制备了LiiiD22iiD2O掺杂ZnO薄膜。将精确梳型的 Pt 电极附着在 SiOiiD22iiD2 基板上。为了控制取向，在该电极上施加高电压并制备薄膜。虽然在此过程中电极被破坏，但我们认识到氧化铝涂层可以有效地保护电极。3）使用家用微波炉进行微波加热，使部分稳定氧化锆（PSZ）粉末完全致密化。将PSZ的压制粉末压块夹在用作微波炉预热器的两块ZnO-MnOィイD22ィエD2-AlィイD22ィエD2OィイD23ィエD2(ZMA)陶瓷板之间并放入烤箱中。用家用微波炉加热16分钟制备的PSZ陶瓷的密度为5.94 g/cmィイD13ィエD1，约等于传统炉法在1350℃烧结4小时或1400℃烧结16分钟的坯体密度。经过ZMA陶瓷预热的PSZ颗粒更容易吸收微波能量并自加热到更高的温度。微波加热不仅增强了致密化，而且增强了晶粒生长。从这个观点来看，判断应该通过微波的照射来促进原子扩散。较少的

项目成果

S.Fujitsu et al.: "Joining of Piezoelectric Zinc Oxide" Proc.Electronic Division Meeting of Cer.Soc.Jpn. (印刷中). (1999)

S.Fujitsu 等人：“压电氧化锌的加入”Proc.Soc.Jpn 的电子部门会议（1999 年出版）。

H.Mizoguchi, K.Ueda, H.Kawazoe, T.Omata, S.Fujitsu: "New Mixed-Valence Oxides of Bismuth : Bi_<1-x>Y_xO_<1.5+8> (x=0.4)"J. Mater. Chem.. 7. 943-946 (1997)

H.Mizoguchi、K.Ueda、H.Kawazoe、T.Omata、S.Fujitsu：“铋的新型混合价氧化物：Bi_<1-x>Y_xO_<1.5 8> (x=0.4)”J。

S.Fujitsu: "Piezoelectric Property and Joining of the Crystal Axis Oriented Zinc Oxide"Ceramic Data Book(Kogyo Seihin Gijutsu Kyokai). 99. 199-203 (1999)

S.Fujitsu：“晶轴取向氧化锌的压电特性和接合”陶瓷数据书（Kogyo Seihin Gijutsu Kyokai）。

S.Fujitsu, K.Koumoto, H.Yanagida, Y.Watanabe, H.Kawazoe: "Change in the Oxidation State of the Adsorbed Oxygen Equilibrated at 25°C on ZnO Surface during Room Temperature Annealing after Rapid Quenching"Jpn. J. Appl. Phys.. 38. 1534-1538 (1999)

S.Fujitsu、K.Koumoto、H.Yanagida、Y.Watanabe、H.Kawazoe：“快速淬火后室温退火期间 ZnO 表面在 25°C 平衡的吸附氧的氧化态变化”Jpn。应用物理.. 38. 1534-1538 (1999)

H.Mizoguchi, K.Ueda, H.Kawazoe, T.Omata and S.Fujitsu: "New Mixed-Valence Oxides of Bismuth : BiィイD21-xィエD2YィイD2xィエD2OィイD21.5+δィエD2(x=0.4)"J.Mater.Chem.. 7. 943-946 (1997)

H.Mizoguchi、K.Ueda、H.Kawazoe、T.Omata 和 S.Fujitsu：“铋的新型混合价氧化物：BiD21-xD2YD2xD2OD21.5+ δD2(x=0.4)”J.Mater.Chem.. 7 943-946（1997）