Nonlinear Optical Metrology of Electronic Interfaces for Silicon Devices

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This project aims to develop a prototype electric field induced second harmonic generation metrology setup for studying thin film dielectric interfaces on silicon in partnership with Femtometrix. The quality of these silicon-dielectric interfaces, which are affected by trapped charges and defects, are critical for microelectronic and optoelectronic device manufacturing. Through several proposed methodologies to separate the effect of interface and bulk signals, it is expected that the sensitivity of the prototype setup will exceed the previous record of 1 kV/cm. This metrology technique will be further expanded for applicability to silicon photovoltaics, specifically passivating contacts which cannot be studied via conventional techniques.