Nonlinear Optical Metrology of Electronic Interfaces for Silicon Devices

该项目旨在与Femtometrix合作开发一个电场诱导二次谐波产生的原型测量装置，用于研究硅上的薄膜介电界面。这些硅-介电界面的质量受到捕获电荷和缺陷的影响，对微电子和光电子器件的制造至关重要。通过几种提出的方法来分离界面信号和体信号的影响，预计原型装置的灵敏度将超过先前的1 kV/cm的记录。这种计量技术将进一步扩展到硅光伏的适用性，特别是通过传统技术无法研究的钝化接触。

This project aims to develop a prototype electric field induced second harmonic generation metrology setup for studying thin film dielectric interfaces on silicon in partnership with Femtometrix. The quality of these silicon-dielectric interfaces, which are affected by trapped charges and defects, are critical for microelectronic and optoelectronic device manufacturing. Through several proposed methodologies to separate the effect of interface and bulk signals, it is expected that the sensitivity of the prototype setup will exceed the previous record of 1 kV/cm. This metrology technique will be further expanded for applicability to silicon photovoltaics, specifically passivating contacts which cannot be studied via conventional techniques.