Nonlinear Optical Metrology of Electronic Interfaces for Silicon Devices

硅器件电子接口的非线性光学计量

• 批准号: LP200300982
• 负责人: Dr Michael Nielsen
• 金额: $ 29.92万
• 依托单位: The University of New South Wales
• 依托单位国家: 澳大利亚
• 项目类别: Linkage Projects
• 财政年份: 2022
• 资助国家: 澳大利亚
• 起止时间: 2022-07-25 至 2025-07-24
• 项目状态: 未结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/LP200300982
• 关键词: Nonlinear; Optical; Metrology; Electronic; Interfaces

This project aims to develop a prototype electric field induced second harmonic generation metrology setup for studying thin film dielectric interfaces on silicon in partnership with Femtometrix. The quality of these silicon-dielectric interfaces, which are affected by trapped charges and defects, are critical for microelectronic and optoelectronic device manufacturing. Through several proposed methodologies to separate the effect of interface and bulk signals, it is expected that the sensitivity of the prototype setup will exceed the previous record of 1 kV/cm. This metrology technique will be further expanded for applicability to silicon photovoltaics, specifically passivating contacts which cannot be studied via conventional techniques.

本项目旨在开发一个原型电场诱导的二次谐波产生的计量设置研究薄膜介电界面的硅与Femtometrium合作。这些硅-电介质界面的质量受陷阱电荷和缺陷的影响，对于微电子和光电器件制造至关重要。通过几种提出的方法来分离界面和体信号的影响，预计原型装置的灵敏度将超过1 kV/cm的先前记录。这种计量技术将进一步扩大适用于硅光刻，特别是钝化接触，不能通过传统技术进行研究。