Development of nm-RBS equipment

nm-RBS设备的开发

• 批准号: 13305007
• 负责人: NARUSAWA Tadashi
• 金额: $ 34.86万
• 依托单位: Kochi University of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13305007/
• 关键词: Glass capillary; High energy ion beam; RBS; PIXE; Ion beam process; ガラスキャピラリー; 収束イオンビーム; ナノテクノロジー; リソグラフィー; MEMS; 収集イオンビーム

In this study, we have developed the focusing technique of MeV ion beams by means of tapered glass capillary optics. The glass capillary optics are formed by a puller as to have inlet diameters of about 1 mm and outlet diameters of sub-microns. Impingent MeV ions to such optics are reflected by the inner wall several times. In the feasibility tests, 2MeV He+ ion beams are forwarded to the capillary. The capillary has 1mm inlet diameter and 300nm outlet diameter. As the results, actually more or less about 1%, is emitted through the outlet without significant energy loss. Compared with the conventional micro-ion beam facilities, the present method is certainly simple and low-cost, thus providing an easy way of several hundred nm ion beams. As the application, we have measured Si-LSI tips by RBS measurement. We have confirmed that the area resolution is less than 1um and non destruction 3D measurement is possible. We do not know the detailed mechanism of beam focusing exactly yet but several origins can be contemplated. The conceivable effect is the charging-up of the glass wall. Irradiation and embedding of the hi

在这项研究中，我们开发了利用锥形玻璃毛细管光学技术聚焦MeV离子束的技术。所述玻璃毛细管光学器件由一拉拔器形成，其入口直径约为1mm，出口直径为亚微米。入射到这种光学器件上的MeV离子被内壁反射几次。在可行性试验中，将2MeV的He+离子束传送到毛细管。毛细管入口直径1mm，出口直径300nm。结果，实际上大约有1%左右的能量通过出口释放，而没有明显的能量损失。与传统的微离子束设备相比，本方法具有简单、低成本的优点，为数百纳米离子束的制备提供了一条捷径。作为应用，我们用RBS测量方法测量了Si-LSI的尖端。我们已经确认，区域分辨率小于1um，并且可以进行非破坏性3D测量。我们还不知道光束聚焦的具体机制，但可以考虑几种来源。可想而知的结果是玻璃墙的充电。hi的辐照和包埋

项目成果

T.Nebiki et al.: "Focusing of MeV ion beams by means of tapered glass capillary optics"J.Vac.Sci.Technol.. A21. 1671-1674 (2003)

T.Nebiki 等人：“通过锥形玻璃毛细管光学器件聚焦 MeV 离子束”J.Vac.Sci.Technol.. A21。

原田整 他: "CoSi_2/Si(001)エピタキシャル成長"表面科学. 21(8). 455-460 (2003)

Osamu Harada 等人：“CoSi_2/Si(001) 外延生长”表面科学 21(8) (2003)。

T.Nebiki, T.Yamamoto, T.Narusawa, M.B.H.Breese, E.J.Teo., F.Watt: "Focusing of MeV Ion Beams by Means of Tapered Glass Capillary Optics"J. Vac. Sci. Technol.. A21. 1671-1674 (2003)

T.Nebiki、T.Yamamoto、T.Narusawa、M.B.H.Breese、E.J.Teo.、F.Watt：“通过锥形玻璃毛细管光学器件聚焦 MeV 离子束”J。

K.Ishida et al.: "Epitaxial Growth of CoSi_2 on Hydrogen-Terminated Si(001)"Appl.Phys.Lett.. Vol.82,No.12. 1842-1844 (2003)

K.Ishida 等人：“CoSi_2 在氢终止的 Si(001) 上的外延生长”Appl.Phys.Lett..第 82 卷，第 12 期。

T.Nebiki et al.: "Focusing of MeV ion beams by means of tapered glass capillary optics"J.Vac.Sci.Technol.. A21(5). 1671-1674 (2003)

T.Nebiki 等人：“通过锥形玻璃毛细管光学器件聚焦 MeV 离子束”J.Vac.Sci.Technol.. A21(5)。