Investigation of YSZ insulator fims with high dielectric constant prepared by limited reaction sputtering technique

有限反应溅射技术制备高介电常数YSZ绝缘体薄膜的研究

• 批准号: 13650338
• 负责人: SASAKI Kimihiro
• 金额: $ 2.3万
• 依托单位: Kanazawa University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650338/
• 关键词: Sputtering; Thin Film; Metallic Mode; High-k Material; Limitted Reaction; ZrO2; MOSFET; ZrO2; 制限反応素スパッタ法; 高誘電率; SiO2; high-kゲートテ絶縁物; 短時間熱処理; 制限反応スパッタ; 金属モードスパッタ; ゲート絶縁膜

A new sputtering film deposition method, named Limtted Reaction Sputtering Technique, was developed and investigated. Using this technique, YSZ and ZrO2 dielectric films were synthsized for gate materials of next generation MOSFETs. The Si substrate surface oxidation was suppressed consequently a high specific dielectric constant as high as over 20 was obtained. On conventional sputtering technique using oxide target, oxigen ions and radicals are easily to be generated, thus Si is oxidized significantly. However, this teconique does not genarate them, resulting in clear interface between Si substrate and deposited films.

本文提出并研究了一种新的溅射成膜方法--限制反应溅射法。利用这种技术，YSZ和ZrO_2介电薄膜的尺寸可用于下一代MOSFET的栅极材料。抑制了Si衬底表面氧化，从而获得了高达20以上的高比介电常数。在传统的溅射工艺中，氧化物靶容易产生氧离子和自由基，从而使Si被严重氧化。但是，这种技术并没有使它们产生，导致Si衬底和沉积膜之间的界面清晰。

项目成果

K.SASAKI et al.: "Limited Reaction Growth of YSZ(ZrO_2 : Y_2O_3) Films"Proc. of ISSP. 41-44 (2001)

K.SASAKI 等：“YSZ(ZrO_2 : Y_2O_3) 薄膜的有限反应生长”Proc.

S.Hama et al.: "A New PZT Thin Films Preparation Technique using Solid Oxygen Source Target by RF Reactive Sputtering"Proc. of 2002 IEEE Int. Couf. on Semiconductor Electronics. 378-382 (2002)

S.Hama 等人：“通过射频反应溅射使用固体氧源靶材制备新型 PZT 薄膜的技术”Proc。

K. Sasaki, T. Hasu, K. Sasaki and T. Hata: "Limited Reaction Growth of YSZ (ZrO2 : Y2O3) Thin Films for Gate Insulator"Proc. Of ISSP. 41-44 (2001)

K. Sasaki、T. Hasu、K. Sasaki 和 T. Hata：“用于栅极绝缘体的 YSZ (ZrO2 : Y2O3) 薄膜的有限反应生长”Proc。

K.SASAKI et al.: "Limited Reaction Growth of YSZ Thin Films for Gate Insulator"Vacuum. 66. 403-408 (2002)

K.SASAKI 等人：“用于栅极绝缘体的 YSZ 薄膜的有限反应生长”真空。

K.sasaki et al.: "Metallic Mode Ctrowth of ZrO_2 Based Thin Films for Gate Inculator Using Reactive Sputtering Technique"Proc, of 2001 AWAD. 93-97 (2001)

K.sasaki等人：“使用反应溅射技术用于栅极绝缘体的ZrO_2基薄膜的金属模式生长”Proc，2001年AWAD。