Investigation of YSZ insulator fims with high dielectric constant prepared by limited reaction sputtering technique

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A new sputtering film deposition method, named Limtted Reaction Sputtering Technique, was developed and investigated. Using this technique, YSZ and ZrO2 dielectric films were synthsized for gate materials of next generation MOSFETs. The Si substrate surface oxidation was suppressed consequently a high specific dielectric constant as high as over 20 was obtained. On conventional sputtering technique using oxide target, oxigen ions and radicals are easily to be generated, thus Si is oxidized significantly. However, this teconique does not genarate them, resulting in clear interface between Si substrate and deposited films.