Generation of Giant Thermo-electric Power by Ultra-heavily Boron Doped SiGe and Its Application

超重硼掺杂SiGe巨热电发电及其应用

• 批准号: 15360161
• 负责人: SASAKI Kimihiro
• 金额: $ 8.9万
• 依托单位: Kanazawa University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15360161/
• 关键词: Thermo-electric Effect; SiGe; Strain; Epitaxial Growth; Power Factor; Seebeck coefficient; Crystalline Defect; ZT; 高濃度ドープ; 多層構造膜; 熱電性能指数

Crystallinity :Crystalline growth of SiGe films was slightly observed to take place at 400℃ from XRD measurement. Below that the films were amorphous structure. The films were confirmed epitaxially grown from RHEED observation. Above 500℃, crystallinity was improved.Resistivity :Until 400℃, film resistivity decreased with increasing growth temperature but above that, resistivity was increased again. This phenomena is explained that at low temperature carrier is not generated because of the amorphous structure. While crystalline growth proceeds, carrier comes to be generated. Under almost perfect crystalline structure, however, resistivity increases again because of intrinsic semiconductor resulting in no carrier genneration. The reason of low resistivity at 400℃ is considered that appropriate crystalline defects generated carriers, which could conduct within the crystallized region.Seebeck coefficient :SiGe films prepared showed large Seebeck coefficients of 1.5-2.0mV/K which is more than 3 times larger than that of bulk SiGe. No special coreration was observed on Seebeck coefficient with samples.Thermo-electric performances :Power factor was estimated from the Seebeck coeffcient and resistivity and showed as high as 7.2x10^<-2>Wm^<-1>K^<-2>. Moreover, the non-dimensional figure of merit Z reached ZT=1.3 at room temperature. This value shows useful for practical use.

结晶度：通过XRD测量，在400℃下观察到SiGe薄膜的结晶生长。低于此值的薄膜为非晶态结构。通过RHEED观察证实了薄膜是外延生长的。电阻率：在400 ℃以前，薄膜电阻率随生长温度的升高而降低，但在400℃以上，电阻率又开始升高。这一现象的原因是低温下由于非晶结构的存在而没有载流子产生。当晶体生长进行时，载流子开始产生。然而，在几乎完美的晶体结构下，由于本征半导体导致没有载流子产生，电阻率再次增加。Seebeck系数：所制备的SiGe薄膜具有较大的Seebeck系数（1.5-2.0mV/K），是体硅锗的3倍以上。热电性能：由Seebeck系数和电阻率估算功率因数，功率因数高达7.2 × 10 ~（-1）<-2>Wm ~（-1）K <-1>~（-1）<-2>。此外，无量纲优值Z在室温下达到ZT=1.3。该值对于实际使用是有用的。

项目成果

Unbalanced Magnetron Sputtering using Cylindrical Target for Low-temperature Optical Costing

使用圆柱形靶材的不平衡磁控溅射进行低温光学成本计算

• 发表时间: 2005
• 期刊: Jpn.J.Appl.Phys. 44・1B
• 作者: C.Wang;K.Sasaki;Y.Yonezawa;T.Hata
• 通讯作者: T.Hata

Thermoelectric Properties of Si/Ge Multi-nanolayer Films Prepared by Ion-beam Sputtering Technique

离子束溅射技术制备Si/Ge多层纳米层薄膜的热电性能

• 发表时间: 2004
• 期刊: Abs.2004 Intern.Sypmp.on Organic and Inorganic Materials and Related Nanotechnologies
• 作者: M.Kitai;H.Watase;K.Sasaki;T.Hata
• 通讯作者: T.Hata

Sputter Growth SiGe Films-Epitaxy, Strain and Thermo-electric Properties

溅射生长 SiGe 薄膜 - 外延、应变和热电性能

• 发表时间: 2004
• 期刊: Abs.3^<rd> Intern.Workshop on New Group IV(Si-Ge-C) Semiconductors
• 作者: K.Sasaki;T.Hata
• 通讯作者: T.Hata

Thermoelectric Properties of Si/Ge Multi-nanolaye Films Prepared by Ion-beam Sputtering Technique

离子束溅射技术制备Si/Ge多层纳米薄膜的热电性能

• 发表时间: 2004
• 期刊: Abs.2004 Intern.Sypmp.on Organic and Inorganic Materials and Related Nanotechnologies
• 作者: M.Kitai;H.Watase;K.Sasaki;T.Hata
• 通讯作者: T.Hata

傾斜材料とこれを用いた機能素子

梯度材料及使用其的功能器件

• 发表时间: 2005