Study on New Emitter Structure Using Ultra-Thin Silicon Carbide Films as Hole Blocking Layr
采用超薄碳化硅薄膜作为空穴阻挡层的新型发射极结构研究
基本信息
- 批准号:07650394
- 负责人:
- 金额:$ 1.34万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:1995
- 资助国家:日本
- 起止时间:1995 至 1996
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
It is possible to reduce the base resistance by introducing wider energy bandgap emitter than a base region. This can make operation speed of bipolar transistor faster. We proposed amorphous SiC (a-SiC) and microcrystalline Si (mu c-Si) for the emitter material and fabricated prototype devices using those. For only using mu c-Si the device showed low current gain because of epitaxial growth which forms the Si homojunction. Whereas, we fabricated devices with a a-SiC ultra-thin film before deposition of a mu c-Si film, resulting in 20-30 times larger current gain than that of the mu c-Si device. However emitter resistance of the a-SiC device increased, which degraded high frequency performance.Nextly, we attempted to fabricate devices having SiGe base as a narrow bandgap base. SiGe films were formed by sputtering Si and Ge targets using an Ar ion beam. Epitaxial temperature went down by adding Ge. For example, the epitaxial temperature was as low as 400゚C for composition of Si_<.75>Ge_<.25>.Furthermore, we investigated low temperature Si epitaxial growth by ECR (Electron Cycrotron Resonance) plasma CVD method. In the film growth process, not only deposition process but also etching process was found to proceed. The later process was found to be effective for enhancing epitaxial growth. Moreover, selective epitaxial growth was successfully carried out by controlling the deposition conditions.
可以通过引入比基极区域更宽的能量带隙发射极来减小基极电阻。这可以提高双极晶体管的工作速度。我们提出了非晶碳化硅(a-SiC)和微晶硅(mu - c-Si)作为发射极材料,并使用它们制作了原型器件。当器件只使用c-Si时,由于外延生长形成Si同质结,器件的电流增益较低。然而,我们在沉积c-Si薄膜之前先用a- sic超薄薄膜制备器件,得到的电流增益比c-Si器件大20-30倍。然而,a-SiC器件的发射极电阻增加,降低了高频性能。接下来,我们尝试制造具有SiGe基作为窄带隙基的器件。用氩离子束溅射Si和Ge靶材形成SiGe薄膜。加入Ge后,外延温度降低。例如,Si_<.75>Ge_<.25>的外延温度低至400 C。此外,我们利用电子回旋共振(ECR)等离子体CVD方法研究了低温硅外延生长。在薄膜生长过程中,不仅有沉积过程,还有蚀刻过程。发现后一种工艺对增强外延生长是有效的。此外,通过控制沉积条件,成功地实现了选择性外延生长。
项目成果
期刊论文数量(20)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
佐々木公洋、中田圭一、畑朋延: "IBSによるSiGeエピタキシャル成長の基礎特性" 信学技報. CPM96-110. 43-48 (1996)
Kimihiro Sasaki、Keiichi Nakata 和 Tomonobu Hata:“IBS 的 SiGe 外延生长的基本特征”CPM96-110 (1996)。
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- 影响因子:0
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供田英之,佐々木公洋他: "ECRプラズマの発光分光特性とその薄膜成長におよぼす影響" 第56回応用物理学会学術講演会予稿集. 447- (1995)
Hideyuki Toda、Kimihiro Sasaki等:“ECR等离子体的发射光谱特性及其对薄膜生长的影响”日本应用物理学会第56届年会论文集447-(1995)。
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K. Sasaki, K. Nakata T. Hata: "Eptaxial Growth of SiGe Thin Films by Ion-Beam Sputtering" Appl. Surface Science. 113/114. 43-47 (1997)
K. Sasaki、K. Nakata T. Hata:“通过离子束溅射进行 SiGe 薄膜的外延生长”应用。
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- 影响因子:0
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K. Sasaki, T. Hikichi S. Furukawa: "High Frequency Characteristics of Si Based Heterojunction Bipolar Transistors with True Amorphous Emitter" Ext. Abs. of International Electron Devicec Symposia. Symp. B. 41-44 (1996)
K. Sasaki、T. Hikichi S. Furukawa:“具有真正非晶发射极的硅基异质结双极晶体管的高频特性”
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- 影响因子:0
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K.Sasaki, T.Takada and T.Hata: "Etching Process in Low Temperature Epitaxial Growth of Silicon by ECR Plasma CVD" 4th ISSP. (to be published). (1997)
K.Sasaki、T.Takada 和 T.Hata:“ECR 等离子体 CVD 硅低温外延生长的蚀刻工艺”第 4 届 ISSP。
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SASAKI Kimihiro其他文献
SASAKI Kimihiro的其他文献
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{{ truncateString('SASAKI Kimihiro', 18)}}的其他基金
Generation of Giant Thermo-electric Power by Ultra-heavily Boron Doped SiGe and Its Application
超重硼掺杂SiGe巨热电发电及其应用
- 批准号:
15360161 - 财政年份:2003
- 资助金额:
$ 1.34万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Investigation of YSZ insulator fims with high dielectric constant prepared by limited reaction sputtering technique
有限反应溅射技术制备高介电常数YSZ绝缘体薄膜的研究
- 批准号:
13650338 - 财政年份:2001
- 资助金额:
$ 1.34万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
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