Study of Wide Bandwidth All Optical Wavelength Converter using Low Dimensional Quantum Well Structure

采用低维量子阱结构的宽带宽全光波长转换器研究

• 批准号: 13650353
• 负责人: SHIMOMURA Kazuhiko
• 金额: $ 2.18万
• 依托单位: Sophia University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650353/
• 关键词: Low Dimensional Quantum Well; Wavelength Converter; InP; InAs Quantum Dots; Self-Assembled; MOVPE; Selective Area Growth; Nonlinear Optical Effect; 波長変換; 量子ドット; Stranski-Kranstanowモード; 非線形効果; 並列導波路; 半導体光増幅器

The optical properties of self-assembled quantum dots (QDs) via Stranski-Krastanov (S-K) growth mode, which is induced by relatively large lattice mismatch between growth material and substrate are currently a subject of intense investigation due to their fascinating physical properties and their strong potential for application in optoelectronics devices.We have shown the growth condition of InAs quantum dots (QDs) on (100)InP substrate under the S-K growth mode by using low pressure metalorganic vapor phase epitaxy (MOVPE). The growth procedure of InAs QDs was as follows. After the growth of 3nm GalnAs buffer layer on the InP substrate, TMI and tBA were supplied and InAs QDs were self-formed during the growth interruption. In the experiment, we obtained the relation between InAs dot diameter and the growth temperature, pressure, and source supplied time, and growth interruption time. The QD density had a greatly dependence on the growth temperature, pressure, and source supplied time and growth interruption. The lateral size of 16.7nm QDs was obtained under a 500 ℃ growth temperature and a 15Torr growth pressure and a 7sec source supplied time and a 60sec growth interruption time. As far as we know this QDs size is the smallest InAs dot on the InP substrate. And we have grown the multi-stacked InAs/InP QDs. The PL measurements of the single-layer InAs/InP QDs were performed at low temperature (10K), and exhibited an emission (FWHM of 54.3meV) around the wavelength of 1837nm. This wavelength was well agreed with the calculation result.

通过S-K生长模式自组装量子点的光学性质，由于InAs量子点具有独特的物理性质和在光电子器件中的巨大应用潜力，因此InAs量子点的生长条件是目前研究的热点之一。在低压金属有机物气相外延（MOVPE）S-K生长模式下制备了InP衬底。InAs QD的生长过程如下。在InP衬底上生长3 nm GaInAs缓冲层后，供给TMI和tBA，在生长中断期间自形成InAs量子点。在实验中，我们得到了InAs点直径与生长温度、压力、源供应时间和生长中断时间的关系。量子点密度与生长温度、压强、源供给时间和生长中断时间有很大的依赖关系。在生长温度为500 ℃、生长压力为15 Torr、源供给时间为7s、生长中断时间为60 s的条件下，得到了横向尺寸为16.7nm的量子点。据我们所知，这个量子点的尺寸是InP衬底上最小的InAs点。并成功地生长了多层InAs/InP量子点。在低温（10 K）下对单层InAs/InP量子点进行了PL测量，在1837 nm附近有54.3meV的荧光发射。该波长与计算结果吻合较好。

项目成果

Y.Moriguchi, T.Kihara, K.Shimomura: "High growth enhancement factor in arrayed waveguides by MOVPE selective area growth"Proc. of 11th International Conference on Metalorganic Vapour Phase Epitaxy (ICMOVPE XI). 229 (2002)

Y.Moriguchi、T.Kihara、K.Shimomura：“通过 MOVPE 选择性区域生长实现阵列波导的高生长增强因子”Proc。

Y.Moriguchi, T.Kihara, and K.Shimomura: "High growth enhancement factor in arrayed waveguides by MOVPE selective area growth"Proc. of 11th International Conference on Metalorganic Vapour Phase Epitaxy (ICMOVPE XI). 229 (2002)

Y.Moriguchi、T.Kihara 和 K.Shimomura：“通过 MOVPE 选择性区域生长实现阵列波导的高生长增强因子”Proc。

Y.Kawakita, K.Shimomura: "A novel wavelength dividing and switching device using arrayed waveguide"Proc. of Conference on Lasers and Electro-Optics (CLEO 2002). 104-105 (2002)

Y.Kawakita，K.Shimomura：“一种使用阵列波导的新型波长分割和切换装置”Proc。

三木一憲, 川北泰雅, 木原達哉, 下村和彦: "階段型屈折率分布アレイ導波路を用いた1.55μm帯光偏向器に関する理論解析"電子情報通信学会論文誌,C-I. J85-C,8. 728-736 (2002)

Kazunori Miki、Yasumasa Kawakita、Tatsuya Kihara、Kazuhiko Shimomura：“使用阶梯式渐变折射率阵列波导的 1.55 μm 波段光学偏转器的理论分析” IEICE Transactions，C-I J85-C，8. 728 -736 (2002)

R.Fukuoka, K.Yamazaki, K.Shimomura: "Greatly size reduction of InAs Quantum Dots on (001)InP substrate"Proc. of 11th International Conference on Metalorganic Vapour Phase Epitaxy (ICMOVPE XI). 270 (2002)

R.Fukuoka、K.Yamazaki、K.Shimomura：“(001)InP 衬底上 InAs 量子点的尺寸大幅减小”Proc。