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Study on Low Voltage Direct Current Electroluminescence Characteristics in ZnS/Si Hetero-junction Device and Related Fluorescent Materials

ZnS/Si异质结器件及相关荧光材料低压直流电致发光特性研究

基本信息

批准号：
13650356
负责人：
HIRATE Takashi
金额：
$ 1.86万
依托单位：
Kanagawa University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650356/
关键词：
Zinc Sulfide Silicon Hetero Junction Electroluminescence Thin Film Zinc Oxide

项目摘要

We studied on the electroluminescence characteristics of the ITO/ZnS:Mn/n-Si hetero-junction devices. The devices show the electroluminescence after the electrical forming treatment. The devices operate stably with direct current mode in room temperature and we could lower the initiating voltage of luminescence to about 7[V]. The brightness, however, is low. The result of this study has proved that the luminescence pattern is a set of the many small-sized luminescent points and that the distribution of these points is decided at the forming treatment. The luminance of these points increases with the increasing applied voltage. The number of these points does not change with the increasing voltage, however, and the number density of these points is low. Thus the brightness does not reach the practical value. It is necessary to investigate the mechanism of the generation of the luminescence point and to increase the density of the point.Further, we studied on the devices with the different structures; ITO/ZnS:Mn/p-Si, ITO/ZnS:Mn/Y2O3/n-Si or ITO/ZnS:Mn/ZnO/n-Si, and on the effect of the Nd:YAG laser irradiation on the Si surface to increase the brightness. As the results of these studies we observed that the device with the inserted layer of the oriented ZnO whiskers between the ZnS:Mn film and the Si substrate showed the excellent electroluminescence characteristics. We study on this device in the future.

研究了ITO/ZnS：Mn/n-Si异质结器件的电致发光特性。器件在电成形处理后显示出电致发光。该器件在室温下工作稳定，可将发光起始电压降低到7[V]左右。然而，亮度很低。研究结果表明，发光图案是由许多小尺寸发光点组成的集合，这些发光点的分布在成形处理时就已决定。这些点的亮度随着施加电压的增加而增加。然而，这些点的数量不随电压的增加而改变，并且这些点的数量密度低。因此亮度达不到实用价值。进一步研究了ITO/ZnS：Mn/p-Si、ITO/ZnS：Mn/Y_2O_3/n-Si和ITO/ZnS：Mn/ZnO/n-Si三种不同结构的发光器件，以及Nd：YAG激光对Si表面发光的影响。研究结果表明，在ZnS：Mn薄膜和Si衬底之间插入取向ZnO晶须层的器件表现出优异的电致发光特性。我们将在今后对该装置进行研究。