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Electron Optics of Electron Beam Lithography System with Multi-Micro Columns

多微柱电子束光刻系统的电子光学

基本信息

批准号：
13650377
负责人：
TAKAOKA Akio
金额：
$ 2.05万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

项目摘要

Electron beam lithography with multi-micro columns is a quite promising method in the next node of lithography when the minimum line width becomes less than 50 nm. EB lithography has a great advantage that we can directly expose the wafers without masks. I investigated the key factors when multi-micro columns are arranged in a row or like a grid. The electric field in columns is numerically calculated with the surface charge method which can be applied in 3D space.Individual column has to control independently in maskless operation, but the neighboring columns do not permit with any coupling. Beam turn-on and turn-off is basic control in multi-micro system and there are two usual methods for ON/OFF operation: beam cut-off by the gate voltage of electron guns and beam blanking out by a deflector and an aperture. After the 3D-field analysis and the trajectory simulation, it is found that the beam blanking method is much advantageous because weak influence in the adjacent column. It is caused that deflector has a dipole field and this field decrease much sharp than Coulomb potential field. The trajectory shift by the leakage field is calculated in a few models quantitatively and the ability and the prospect of multi-micro column lithography system are discussed.

当最小线宽小于50 nm时，多微柱电子束光刻是光刻技术发展的下一个节点，是一种很有前途的光刻方法。电子束光刻具有无需掩模直接曝光的优点。我调查的关键因素时，多微列排列成一行或像一个网格。采用可在三维空间应用的表面电荷法对柱内电场进行了数值计算，在无掩模工作时，单个柱必须独立控制，而相邻柱之间不允许有任何耦合。电子束的开/关是多微系统的基本控制，常用的开/关方法有两种：利用电子枪的门极电压来切断电子束和利用偏转器和光阑来消隐电子束。通过三维场分析和弹道仿真，发现束流消隐法对相邻柱体的影响很小，具有很大的优越性。这是由于偏转器中存在一个偶极场，且偶极场的衰减比库仑势场的衰减大得多。定量计算了几种模型中漏场对光刻轨迹的影响，并对多微柱光刻系统的性能和前景进行了讨论。