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Temperature measurement on submicron-area of thin films by using electron beam

利用电子束测量薄膜亚微米区域的温度

基本信息

批准号：
02650030
负责人：
TAKAOKA Akio
金额：
$ 1.22万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1990
资助国家：
日本
起止时间：
1990 至 1991
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-02650030/
关键词：
Temperature Measurement Local Temperature Thin Film Thermal Conductivity Electron Beam Transmission Electron Microscope Thermal Diffusivity Thermal Diffuse Scattering 電子ビ-ム薄膜温度

项目摘要

The local temperature on submicron-area and the thermal-conductivity of thin films are measured by using transmission electron microscopes (TEM) whose spatial resolution is excellent. This measurement is based on the thermal diffuse scatterino, effect in the specimen and on the change of electron beam transmission by the temperature if an aperture is inserted. This high spatial resolution can not be attained for the measurement with light.In 1990, we tried to measure the local temperature on Al lines in LSI as an expansion of measurement for polycrystalline films. The grain size of AI lines is about 1 mum, so the measuring area consists of almost single crystal. In the case of a single crystal, a slight tilt of the specimen by heating degrade the accuracy due to the change of Bragg diffraction and other interferences. Then, the transmission measured at many points automatically with a personal computer and the transmission independent of such interferences is obtained. The accuracy is about <plus-minus>50K in the range of 300-550 K at presenIn 1991, we investigated the measurement method of thermal conductivity of thin films by combining the local heating with a laser. The laser output is modulated by sine wave and the phase difference between the laser and the local temperature is measured by a lockin-amplifier. This method has some advantages that the absolute measurerdent of temperature does not need and it is no need to know the physical constant of films. For a polycrystalline Al film of 200nm in thickness, the measured conductivity varies in the range of 30-100 W/mK. This results from the error in the conversion form the phase difference to the conductivity as well as the error in the measurement of phase. The precise determination of laser irradiation condition needs for the specimen of TEIL. We improved the measurement system to determine this condition precisely and also found the condition in which the error is little.

利用具有良好空间分辨率的透射电子显微镜（TEM）测量了亚微米区域的局部温度和薄膜的热导率。这种测量是基于样品中的热扩散散射效应和插入小孔时电子束透射率随温度的变化。1990年，我们尝试测量LSI中Al线上的局部温度，作为对多晶薄膜测量的扩展。Al线的晶粒尺寸约为1 μ m，因此测量区域几乎由单晶组成。在单晶的情况下，由于布拉格衍射和其他干扰的变化，加热引起的样品的轻微倾斜会降低精度。然后，用个人计算机自动地在多个点测量透射率，并获得与这些干扰无关的透射率。在<plus-minus>300-550 K范围内，目前的测量精度约为50 K。1991年，我们研究了局部加热与激光相结合测量薄膜热导率的方法。激光输出采用正弦波调制，激光与局部温度之间的相位差由锁定放大器测量。该方法具有不需要温度的绝对测量和不需要知道薄膜的物理常数等优点。对于厚度为200 nm的多晶Al膜，测量的电导率在30-100 W/mK范围内变化。这是由于从相位差到电导率的转换中的误差以及相位测量中的误差造成的。TEIL样品需要精确确定激光辐照条件。通过对测量系统的改进，精确地确定了这一条件，并找到了误差较小的条件。