Surface "element" imaging by a new scanning probe microscopy

通过新型扫描探针显微镜进行表面“元素”成像

• 批准号: 13650476
• 负责人: TANAKA Yoshihito
• 金额: $ 2.18万
• 依托单位: RIKEN (The Institute of Physical and Chemical Research)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650476/
• 关键词: Probe microscopy; Local capacitance; XAFS; Site-selectivity; Local structure; Local electronic state; Quantum dot; Surface oxide; 表面元素; 静電容量; X線吸収スペクトル; 界面構造; 自然酸化膜; 電子捕獲中心; 化学状態選択; nm構造; 量子効果; チャネル層

The main research results related to this project are as follows.2001(1)We installed a new probe microscopy developed in this project into a beamline of the synchrotron radiation facility, Spring-8. We found that a valence state modulation owing to an inner-shell excitation can be detected by capacitance under the x-ray irradiation.(2)The photon energy dependence of a local capacitance detected by the microprobe indicated an x-ray absorption fine structure (XAFS) spectrum of the sample surface. This finding indicates that the scanning image with surface chemical information, such as element and its bonding states, can be obtained by this method.(3)We demonstrated an advanced site-selectivity ; the control of bias voltage applied to the microprobe selects the observable bonding state.(4)As an industrial application of this method, we successfully observed the site-selective XAFS spectrum of a conduction channel with 〜nm thickness in a transistor.2002(1)We observed various sample surfaces, and reached our project goal: establishment of the surface "element" imaging technique.(2)The advantage of this technique is typically shown in our research: element and structure analyses of electron trap in ultra-thin oxide on semiconductor surface.(3)Simultaneous measurement of the local structure and its electric property by the microprobe is successfully achieved.(4)This capacitance detection technique revealed the interface state of buried quantum dot structure. The site-selectivity involved in this technique makes us possible to analyze the inside of the nano-electric devices.(5)The XAFS spectrum is predictable by molecular orbital calculation. This result shows the reliability and a general guideline for spectrum analysis of this method.

主要研究成果如下：2001年（1）将本项目研制的新型探针显微镜安装到同步辐射装置Spring-8的光束线上。我们发现，由于内壳层激发的价态调制可以通过在X射线照射下的电容检测。（2）由微探针探测到的局域电容的光子能量依赖性表明样品表面的X射线吸收精细结构（XAFS）谱。这一发现表明，这种方法可以获得具有表面化学信息的扫描图像，如元素及其成键状态。(3)We证明了先进的位点选择性;施加到微探针的偏置电压的控制选择可观察的键合状态。(4)As作为该方法的工业应用，我们成功地观察到了晶体管中厚度为10 nm的导电沟道的XAFS谱。2002（1）我们观察了各种样品表面，达到了我们的项目目标：建立表面“元”成像技术。（2）在我们的研究中，半导体表面超薄氧化层电子陷阱的元素和结构分析，体现了这种技术的优势。（3）成功地实现了用微探针同时测量局域结构和电学性质。（4）电容探测技术揭示了掩埋量子点结构的界面态。这种技术中涉及的位置选择性使我们有可能分析纳米电子器件的内部。（5）XAFS谱可通过分子轨道计算预测。这一结果表明了该方法的可靠性和频谱分析的一般准则。

项目成果

Masashi Ishii: "Capacitance x-ray absorption fine structure method using dopant photoionization : x-ray absorption spectroscopy of 〜nm thickness channel in semiconductor device"Japanese Journal of Applied Physics. 40・12. 7129-7134 (2001)

Masashi Ishii：“使用掺杂剂光电离的电容X射线吸收精细结构方法：半导体器件中~nm厚度通道的X射线吸收光谱”日本应用物理学杂志40・12（2001）。

Masashi Ishii: "Double Resonance Capacitance Spectroscopy (DORCAS) : A New Experimental Technique for Assignment of Resonant X-ray Absorption Peaks to Surface Sites of Semiconductor"Nuclear Instruments and Methods in Physics Research, Section B. 199. 205-

Masashi Ishii：“双共振电容光谱（DORCAS）：一种将共振 X 射线吸收峰分配到半导体表面位点的新实验技术”物理研究中的核仪器和方法，B 节 199. 205-

Masashi Ishii: "X-ray Absorption Fine Structure Measurement Using Scanning Capacitance Microscope : Trial for Selective Observation of Trap Centers in 〜nm Region"Japanese Journal of Appliecd Physics. (in press). (2002)

Masashi Ishii：“使用扫描电容显微镜进行 X 射线吸收精细结构测量：〜nm 区域中陷阱中心的选择性观察”日本应用物理学杂志（2002 年出版）。

Yoshihiro Tanaka: "Optical-switching of X-rays using laser-induced lattice expansion"Journal of Synchrotron Radiation. 9. 96-98 (2002)

Yoshihiro Tanaka：“利用激光诱导晶格膨胀实现 X 射线的光学转换”同步辐射杂志。

Masashi Ishii: "X-ray Absorption Fine Structure Measurement Using Scanning Capacitance Microscope : Trial for Selective Observation f Trap Centers in 〜nm Region"Japanese Journal of Applied Physics. 41. 4415-4418 (2002)

Masashi Ishii：“使用扫描电容显微镜进行 X 射线吸收精细结构测量：~nm 区域中陷阱中心的选择性观察试验”日本应用物理学杂志 41. 4415-4418 (2002)。