Surface "element" imaging by a new scanning probe microscopy
Surface "element" imaging by a new scanning probe microscopy
批准号:
13650476
负责人:
TANAKA Yoshihito
金额:
$2.18万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2001
资助国家:
日本
项目状态:
已结题
起止时间:
2001 至 2002
中文摘要
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英文摘要
The main research results related to this project are as follows.2001(1)We installed a new probe microscopy developed in this project into a beamline of the synchrotron radiation facility, Spring-8. We found that a valence state modulation owing to an inner-shell excitation can be detected by capacitance under the x-ray irradiation.(2)The photon energy dependence of a local capacitance detected by the microprobe indicated an x-ray absorption fine structure (XAFS) spectrum of the sample surface. This finding indicates that the scanning image with surface chemical information, such as element and its bonding states, can be obtained by this method.(3)We demonstrated an advanced site-selectivity ; the control of bias voltage applied to the microprobe selects the observable bonding state.(4)As an industrial application of this method, we successfully observed the site-selective XAFS spectrum of a conduction channel with 〜nm thickness in a transistor.2002(1)We observed various sample surfaces, and reached our project goal: establishment of the surface "element" imaging technique.(2)The advantage of this technique is typically shown in our research: element and structure analyses of electron trap in ultra-thin oxide on semiconductor surface.(3)Simultaneous measurement of the local structure and its electric property by the microprobe is successfully achieved.(4)This capacitance detection technique revealed the interface state of buried quantum dot structure. The site-selectivity involved in this technique makes us possible to analyze the inside of the nano-electric devices.(5)The XAFS spectrum is predictable by molecular orbital calculation. This result shows the reliability and a general guideline for spectrum analysis of this method.
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Masashi Ishii: "Capacitance x-ray absorption fine structure method using dopant photoionization : x-ray absorption spectroscopy of 〜nm thickness channel in semiconductor device"Japanese Journal of Applied Physics. 40・12. 7129-7134 (2001)
Masashi Ishii:“使用掺杂剂光电离的电容X射线吸收精细结构方法:半导体器件中~nm厚度通道的X射线吸收光谱”日本应用物理学杂志40・12(2001)。
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Masashi Ishii: "Double Resonance Capacitance Spectroscopy (DORCAS) : A New Experimental Technique for Assignment of Resonant X-ray Absorption Peaks to Surface Sites of Semiconductor"Nuclear Instruments and Methods in Physics Research, Section B. 199. 205-
Masashi Ishii:“双共振电容光谱(DORCAS):一种将共振 X 射线吸收峰分配到半导体表面位点的新实验技术”物理研究中的核仪器和方法,B 节 199. 205-
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Masashi Ishii: "X-ray Absorption Fine Structure Measurement Using Scanning Capacitance Microscope : Trial for Selective Observation of Trap Centers in 〜nm Region"Japanese Journal of Appliecd Physics. (in press). (2002)
Masashi Ishii:“使用扫描电容显微镜进行 X 射线吸收精细结构测量:〜nm 区域中陷阱中心的选择性观察”日本应用物理学杂志(2002 年出版)。
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Yoshihiro Tanaka: "Optical-switching of X-rays using laser-induced lattice expansion"Journal of Synchrotron Radiation. 9. 96-98 (2002)
Yoshihiro Tanaka:“利用激光诱导晶格膨胀实现 X 射线的光学转换”同步辐射杂志。
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通讯作者:
Masashi Ishii: "X-ray Absorption Fine Structure Measurement Using Scanning Capacitance Microscope : Trial for Selective Observation f Trap Centers in 〜nm Region"Japanese Journal of Applied Physics. 41. 4415-4418 (2002)
Masashi Ishii:“使用扫描电容显微镜进行 X 射线吸收精细结构测量:~nm 区域中陷阱中心的选择性观察试验”日本应用物理学杂志 41. 4415-4418 (2002)。
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共 8 条
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