Photonic Structures with III-V-Compounds

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In this research programme we want to investigate whether we can manufacture a photonic crystal from an (InAl)As or equivalent material through direct growth processes. We want to achieve the modulation of the index of refraction through a density modulation of the Indium concentration which is induced by methods of atom lithography. The length scale accessible by this method is 205 nm or longer and corresponds to typical wavelengths ~700 nm or longer, i.e. visible to near infrared wavelengths within the material. This method could make the fabrication of III-V semiconductor compounds with 3D modulation of its composition and hence also index of refraction possible.