Photonic Structures with III-V-Compounds

III-V族化合物的光子结构

• 批准号: 5318816
• 负责人: Professor Dr. Dieter Meschede
• 金额: --
• 依托单位: Institut für Angewandte Physik
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2001
• 资助国家: 德国
• 起止时间: 2000-12-31 至 2003-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/5318816?language=en
• 关键词: Photonic; Structures; III; Compounds

In this research programme we want to investigate whether we can manufacture a photonic crystal from an (InAl)As or equivalent material through direct growth processes. We want to achieve the modulation of the index of refraction through a density modulation of the Indium concentration which is induced by methods of atom lithography. The length scale accessible by this method is 205 nm or longer and corresponds to typical wavelengths ~700 nm or longer, i.e. visible to near infrared wavelengths within the material. This method could make the fabrication of III-V semiconductor compounds with 3D modulation of its composition and hence also index of refraction possible.

在这项研究计划中，我们希望研究我们是否可以通过直接生长过程从（InAl）As或等效材料制造光子晶体。我们希望通过原子光刻方法诱导的铟浓度的密度调制来实现折射率的调制。通过该方法可获得的长度尺度为205 nm或更长，并且对应于约700 nm或更长的典型波长，即材料内的可见光至近红外波长。这种方法可以使III-V族半导体化合物的制造具有其组成的3D调制，因此也可能具有折射率。