Photonic Structures with III-V-Compounds

III-V族化合物的光子结构

• 批准号: 5318816
• 负责人: Professor Dr. Dieter Meschede
• 金额: --
• 依托单位: Institut für Angewandte Physik
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2001
• 资助国家: 德国
• 起止时间: 2000-12-31 至 2003-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/5318816?language=en
• 关键词: Photonic; Structures; III; Compounds

In this research programme we want to investigate whether we can manufacture a photonic crystal from an (InAl)As or equivalent material through direct growth processes. We want to achieve the modulation of the index of refraction through a density modulation of the Indium concentration which is induced by methods of atom lithography. The length scale accessible by this method is 205 nm or longer and corresponds to typical wavelengths ~700 nm or longer, i.e. visible to near infrared wavelengths within the material. This method could make the fabrication of III-V semiconductor compounds with 3D modulation of its composition and hence also index of refraction possible.

在这个研究计划中，我们想要调查我们是否可以通过直接生长过程从(原始)As或同等材料中制造出光子晶体。我们希望通过原子光刻方法诱导的铟浓度的密度调制来实现折射率的调制。这种方法可获得的长度尺度为205 nm或更长，对应于典型的~700 nm或更长的波长，即材料内的可见光至近红外波长。这种方法可以制造具有组成和折射率3D调制的III-V半导体化合物。