Dynamics of charge recombination at surface observed by highly sensitive transient absorption spectrometer
Dynamics of charge recombination at surface observed by highly sensitive transient absorption spectrometer
批准号:
14540483
负责人:
KATOH Ryuzi
金额:
$1.86万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2002
资助国家:
日本
项目状态:
已结题
起止时间:
2002 至 2003
中文摘要
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英文摘要
Charge recombination at interface is an interesting process and it has been applied to solar energy conversion devices, such as photocatalysts and dye-sensitized solar cells. Upon photoexcitation charge separation occurs and then cations and anions are produced. These are non-emitive species and therefore dynamics of these species cannot be probed by fluorescence spectroscopy. Transient absorption technique is a powerful tool for this target. However, in reality it is quite difficult to probe these phenomena due to low sensitivity. Thus, we proposed to develop highly sensitive transient absorption spectrometer.Firstly, we developed highly sensitive transient absorption spectrometer. Using the spectrometer, we can observed very small absorbance change (<10^<-6>). This is enough sensitivity to observe transient absorption in mono-layer film.We studied charge separation and recombination dynamics of dye-sensitized semiconductor films, organic dyes adsorbed on oxide semiconductors (TiO_2,ZnO, SnO_2 etc.). We found that quantum yield of the charge separation is very sensitive to the exciting light intensity and it becomes constant at lower intensity. We also estimated absolute quantum yield of the charge separation. We also studied primary process of photoexcitation of photocatalyst, such as TiO_2 films. Upon photoexcitation electrons and holes are produced. Using our spectrometer reactivity of these species can be studied.
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加藤, 古部, 吉原, 原, 藤橋, 高野, 村田, 荒川, 立矢: "Efficiencies of Electron Injection from Excited N3 Dye into Nanocrystalline Semiconductor (ZrO_2, TiO_2, ZnO, Nb_2O_5, SnO_2, In_2O_3) Films"J.Phys.Chem.B. 108. 4818-4822 (2004)
Kato、Furube、Yoshihara、Hara、Fujihashi、Takano、Murata、Arakawa、Tateya:“从激发的 N3 染料到纳米晶半导体(ZrO_2、TiO_2、ZnO、Nb_2O_5、SnO_2、In_2O_3)薄膜的电子注入效率”J.Phys.Chem .B.108。4818-4822(2004)
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加藤, 古部, 吉原, 原, 藤橋, 高野, 村田, 荒川, 立矢: "Efficiencies of electron injection from excited N3 dye into nano-crystalline semiconductor (ZrO_2, TiO_2, ZnO, Nb_2O_5, SnO_2, In_2O_3) films"J.Phys.Chem.B. (印刷中).
Kato、Furube、Yoshihara、Hara、Fujihashi、Takano、Murata、Arakawa、Tateya:“从激发的 N3 染料到纳米晶半导体(ZrO_2、TiO_2、ZnO、Nb_2O_5、SnO_2、In_2O_3)薄膜的电子注入效率”J .Phys .Chem.B.(正在出版)。
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R.Katoh, A.Furube, T.Yoshihara, K.Hara, G.Fujihashi, S.Takano, S.Murata, H.Arakawa, M.Tachiya: "Efficiencies of Electron Injection from Excited N3 Dye into Nanocrystalline Semiconductor (ZrO_2,TiO_2, ZnO, Nb_2O_5,SnO_2,In_2O_3) Films"J.Phys.Chem. B. 108.
R.Katoh、A.Furube、T.Yoshihara、K.Hara、G.Fujihashi、S.Takano、S.Murata、H.Arakawa、M.Tachiya:“从激发的 N3 染料到纳米晶半导体 (ZrO_2) 的电子注入效率
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T.Yoshihara, R.Katoh, A.Furube, Y.Tamaki, M.Murai, K.Hara, S.Murata, H.Arakawa, M.Tachiya: "Identification of reactive species in phtoexcited nanocrystalline TiO_2 films studied by wide wavelength range (400-2500 nm) transient absorption spectroscopy"J.Ph
T.Yoshihara、R.Katoh、A.Furube、Y.Tamaki、M.Murai、K.Hara、S.Murata、H.Arakawa、M.Tachiya:“通过宽波长研究光激发纳米晶 TiO_2 薄膜中活性物质的识别
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吉原, 加藤, 古部, 村井, 玉城, 原, 村田, 荒川, 立矢: "Quantitative estimation of the efficiency of electron injection from excited sensitizer dye into nanocrystalline ZnO film"J.Phys.Chem.B. 108. 2643-2647 (2004)
Yoshihara、Kato、Furube、Murai、Tamaki、Hara、Murata、Arakawa、Tateya:“从激发的敏化剂染料到纳米晶 ZnO 薄膜的电子注入效率的定量估计”J.Phys.Chem.B. 2004)
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共 8 条
Light-energy-conversion reaction system constracted by utilizing exciton dynamics.
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批准号:22550026
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.08万
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财政年份:2010
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负责人:KATOH Ryuzi
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依托单位:
海外基金