Distributions of impurity atoms in semiconductors analyzed by X-ray CTR scattering measurement

点击翻译按钮获取中文摘要

For a further development of electronics and optoelectronics, new functions of materials are demanded. Thus, low-dimensional structures such as quantum wells have become to be adopted. In the quantum structures of a few ML thicknesses, the vagueness of the interface in the scale of only a few angstrom is no longer negligible. At the same time, the distributions of the impurity atoms which determine the electronic properties of semiconductors must be understood in the same scale. In this work, we proposed that the X-ray crystal truncation rod (CTR) scattering measurement can be used to investigate the distributions of atoms at the interfaces in atomic scale.We had conducted the simulation of the X-ray CTR scattering in detail to find the condition where the distributions of impurity atoms were detected more sensitively. The X-ray CTR scattering measurement need high intensity X-ray to investigate the distributions of impurity atoms. We also tried to develop a X-ray CTR scattering measurement system which was simple and portable in order to utilize any chance when the high intensity X-ray source was available. Based on the simulation and using the measurement system, the distribution of In atoms diffused in the GaAs layer was measured to show the ability of the measurement system and method, and the distributions were successfully investigated.