Raman scattering study of compositional homogeneity in InGaN ternary compounds
Raman scattering study of compositional homogeneity in InGaN ternary compounds
批准号:
14550312
负责人:
SUGIURA Touko
金额:
$1.86万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2002
资助国家:
日本
项目状态:
已结题
起止时间:
2002 至 2003
中文摘要
本文从理论上和定量上研究了<1-x>用MOVPE法在蓝宝石衬底上直接生长In_xGa_ N三元化合物的组分均匀性。首先,我们从热力学分析中发现,即使In的摩尔分数x增加,InGaN中的Ga-N和In-N键长也保持了纯GaN和InN的键长。因此,这表明InN和GaN的混合晶体不是均匀的。接下来,我们通过使用SEM图像和TED图像来评估InxGal-xN的宏观性质,作为结果,整个样品显示为厚的单晶。另外,我们发现随着x的增加,PL谱的展宽增强。最后,利用空间相关模型分析了拉曼谱E_2声子模的非对称展宽。这是增强在理论上提出的不溶性区域通过增加铟的摩尔分数。计算了E_2声子模的关联长度。它在大约10 nm的数量级上,这与川口等人通过TEM分析提出的柱状结构的尺寸在同一数量级上。[J.晶体生长189/190(1998)24]。它显示了一个很好的协议适用于由Azuhata等人给出的色散关系。[Physica B 219/220(1996)493]。此外,我们试图分析<2iow>强烈反映样品成分均匀性的E_声子模,但我们无法观察到。这是因为该模式的态密度较低,且在激发光源附近存在本征能。
英文摘要
We have studied theoretically and quantitatively the compositional homogeneity of In_xGa_<1-x>N ternary compounds directly grown on sapphire substrates with the aid of low-temperature-grown AIN buffer layer by MOVPE method. First, we found that Ga-N and the In-N bond.length in InGaN kept the bond length of pure GaN and InN from thermo-dynamical analyses even though the In molar fraction x is increasing. Therefore, it suggested that the mixed crystal of InN and GaN did not be homogeneous. Next, we evaluated the macroscopic nature of InxGal-xN by using the SEM image and the TED image, As the results, the whole samples were shown as the thick single crystals. Also, we found the enhancement of the broadening of the PL spectrum as increasing of x. Finally, we analyzed the asymmetric broadening of the E_2 phonon mode of the Raman spectra with the aid of the Spatial Correlation model. That is enhanced in the region of immiscibility suggested theoretically by increasing the indium molar fraction. The correlation length, which corresponds to the decay length of E_2 phonon mode, was estimated. It was on the order of about lOnm, which is on the same order magnitude as the size of the columnar structure suggested by TEM analyses by Kawaguchi et al.[J. Cryst. Growth 189/190 (1998) 24]. It showed a good agreement for applying to the dispersion relation given by Azuhata et al.[Physica B 219/220 (1996) 493]. Furthermore, we tried to analyze the E_<2iow> phonon mode which was strongly reflected the compositional homogeneity of the samples, however, we could not observe. This reason is that the mode has the low density of states and the existence of the eigen-energy around the excited light source.
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杉浦藤虎, 塚本武彦, 安藤浩哉: "GaMnNのラマン散乱に関する研究"豊田工業高等専門学校研究紀要. 35. 39-42 (2002)
Fujitora Sugiura、Takehiko Tsukamoto、Hiroya Ando:“GaMnN 的拉曼散射研究”丰田国立技术大学研究通报 35. 39-42 (2002)。
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Touko Sugiura, Takehiko Tsukamoto, Hiroya Andoh: "Raman scattering study of GaMnN"Journal of Toyota College of Technology. Vol.35. 39-42 (2002)
Touko Sugiura、Takehiko Tsukamoto、Hiroya Andoh:“GaMnN 的拉曼散射研究”丰田技术学院学报。
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吉田行宏, 杉浦藤虎, 塚本武彦, 安藤浩故: "フォトルミネッセンスによるInGaAsPの非混和性に関する研究"豊田工業高等専門学校研究紀要. 36. 33-38 (2003)
Yukihiro Yoshida、Fujitora Sugiura、Takehiko Tsukamoto、Hiroshi Ando:“通过光致发光研究 InGaAsP 的不混溶性”丰田国立技术学院通报 36. 33-38 (2003)。
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杉浦藤虎, 塚本武彦, 安藤浩哉: "ラマン散乱によるInGaNの成長不安定性に関する研究"豊田工業高等専門学校研究紀要. 36. 21-28 (2003)
Fujitora Sugiura、Takehiko Tsukamoto、Hiroya Ando:“拉曼散射导致的 InGaN 生长不稳定性的研究”丰田国立技术大学研究通报 36. 21-28 (2003)。
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Yukihiro Yoshida, Touko Sugiura, Takehiko Tsukamoto, Hiroya Andoh: "Photo-luminescence investigation of InGaAsP in the region of immiscibility"Journal of Toyota College of Technology. Vol.36. 33-38 (2003)
Yukihiro Yoshida、Touko Sugiura、Takehiko Tsukamoto、Hiroya Andoh:“不混溶区域中 InGaAsP 的光致发光研究”丰田技术学院学报。
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Study of engineering education to develop the creativity and originality based on the soccer robot made at low price and quantitative evaluation of creative minds
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批准号:17500610
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.39万
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财政年份:2005
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负责人:SUGIURA Touko
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依托单位:
海外基金