Study on radiation damages of semiconductor devices for high and low temperature

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In these days when the use of nuclear reactors, high-energy particle accelerators and artificial satellites expands, the development of semiconductor devices, which can normally operate in a radiation-rich environment, is extensively taking place everywhere. In the project, the degradation of the electrical performance and the generated lattice defects in semiconductor devices, subjected to 1-MeV electrons, 1-MeV fast neutrons, were investigated as a function of fluence and radiation source. The radiation damages of semiconductor devices for high and low temperature was also studied. The main conclusions which can be made from the research project:1. The degradation of the electrical performance of devices increases with increasing radiation fluence, while it decreases with increasing germanium content.2. The electron capture levels, which act as generation-recombination center, are mainly responsible for the degradation of device performance.3. At 300 ℃ irradiation, the reduction of the photo current is only 30 % of the starting value. This result suggests that the creation and recovery of the radiation damage proceeds simultaneously at high temperature irradiation.4. The damage coefficient for neutron irradiation is nearly the same as for neutron irradiation and is about three orders of magnitude larger than that for electron irradiation. This difference is due to the different number of knock-on atoms, which is correlated with the difference of mass and the possibility of nuclear collisions for the formation of lattice defects.