Strengthening of materials caused by dispersion of doughnut-like second phase
环形第二相的分散导致材料强化
基本信息
- 批准号:14550683
- 负责人:
- 金额:$ 2.18万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2002
- 资助国家:日本
- 起止时间:2002 至 2003
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
We have made the following studies to understand the change of mechanical properties of materials caused by dispersion of doughnut-like second phase.Cu-Si alloys are internally oxidized at various of Si atoms with oxygen, film-like SiO_2 precipitates formed on grain boundaries (GBs) is observed. After the reaction of Si atoms with oxygen, film-like SiO_2 precipitates with holes which expose GB of Cu are initially formed. At temperatures used for the internal oxidation, the holes rapidly grow and the morphology of the film-like SiO_2 evolves to a particulate equilibrium shape through formation of two-dimensional SiO_2 network.Theoretical calculations to understand effects of doughnut-like inclusions on the mechanical properties of materials are made. The averaged Eshelby tensors that relate uniform eigenstrains and average total strains in doughnut-like inclusions are obtained. These are compared with the Eshelby tensors of oblate spheroidal and rod-like inclusions. We show that the averaged Eshelby tensors of the doughnut-like inclusions on a plane are almost the same as the average of the Eshelby tensors of randomly oriented rod-like inclusions on the same plane. This is satisfied for both "thin" doughnut-like inclusions. The strain field caused by uniform and purely dilatational eigenstrains is also discussed for a doughnut-like inclusion. Near the doughnut-like inclusion, there are two points where all components of the strains are null. Using the results results obtained, we have discussed the effects of the doughnut-like inclusions on the mechanical properties of materials.
为了了解第二相弥散对材料力学性能的影响,我们对Cu-Si合金进行了如下研究:Cu-Si合金在不同Si原子处与氧发生内氧化,在晶界上形成薄膜状SiO_2沉淀。Si原子与氧反应后,首先形成带孔的薄膜状SiO_2沉淀,露出Cu的晶界。在内氧化温度下,孔洞迅速长大,膜状SiO_2形态通过形成二维SiO_2网络向颗粒平衡形态演变。平均Eshelby张量,涉及均匀本征应变和平均总应变甜甜圈状夹杂物。这些比较与Eshelby张量的扁球形和棒状夹杂物。我们发现,平面上的甜甜圈状夹杂物的平均Eshelby张量几乎是相同的随机取向的杆状夹杂物在同一平面上的Eshelby张量的平均值。这对于两种“薄的”甜甜圈状夹杂物都是满意的。本文还讨论了均匀本征应变和纯本征应变引起的环形夹杂的应变场。在环状包涵体附近,有两个点,菌株的所有组分均为零。利用所得结果,讨论了环状夹杂物对材料力学性能的影响。
项目成果
期刊论文数量(8)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
H.Sato, I.Ota, T.Fujii, S.Onaka, M.Kato: "Morphological Evolution of Grain-Boundary SiO_2 in Internally Oxidized Cu-Si Bicrystals"Materials Transactions. (印刷中).
H.Sato、I.Ota、T.Fujii、S.Onaka、M.Kato:“内氧化铜硅双晶中晶界 SiO_2 的形态演化”(正在出版)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
S.Onaka: "Strain-free points near a doughnut-like inclusion with purely dilatational eigenstrains"Mechanics Research Communications. 30. 663-666 (2003)
S.Onaka:“具有纯膨胀本征应变的甜甜圈状夹杂物附近的无应变点”力学研究通讯。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
S.Onaka: "Strain Fields Caused by Doughnut-like and Tubular Inclusions with Uniform Eigenstrains"Mechanics Research Communications. (in press).
S.Onaka:“具有均匀特征应变的环形和管状夹杂物引起的应变场”力学研究通讯。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
H.Sato: "Morphological Evolution of Grain-Boundary SiO_2 in Internally Oxidized Cu-Si Bicrystals"Materials Transactions. 45. 818-823 (2004)
H.Sato:“内氧化铜硅双晶中晶界SiO_2的形态演化”材料交易。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
S.Onaka: "Strain Fields Caused by Doughnut-like and Tubular Inclusions with Uniform Eigenstrains"Mechanics Research Communications. (印刷中).
S. Onaka:“具有均匀特征应变的环形和管状夹杂物引起的应变场”力学研究通讯(正在出版)。
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- 影响因子:0
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ONAKA Susumu其他文献
ONAKA Susumu的其他文献
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Shape analysis of crystalline nanoparticles with superspherical approximation having physical meanings
具有物理意义的超球形近似晶体纳米粒子的形状分析
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25390029 - 财政年份:2013
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Understanding of small particles shapes in crystalline materialswith a pseudo-polyhedral approximation
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Origin of particle shape of pseudo-polyhedral precipitates in alloys
合金中伪多面体析出物颗粒形状的起源
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19560690 - 财政年份:2007
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10650687 - 财政年份:1998
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