Study on the Development of InSb Radiation Detectors with High Efficicency and High Energy Resolution at Low Operating Temperature

低工作温度高效率、高能量分辨率InSb辐射探测器研制研究

• 批准号: 15360505
• 负责人: KANNO Ikuo
• 金额: $ 9.79万
• 依托单位: Kyoto University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15360505/
• 关键词: InSb; low temperature detector; photon detector; gamma rays; X-rays; crystal growth

Crystal growth of InSb was carried out. In the previous fiscal year, we have got a single crystal with the crystal velocity of 0.47 mm/h. The employed raw materials were In and Sb with their purities greater than 99.9999 %. After the crystal growth, we have cut the crystal into wafers. For the three wafers at the top, middle and end of the crystal were examined for stoichiometry, as well as commercial InSb wafers. Also, electric properties such as resistivity, carrier concentration and Hall mobility were measured for these wafers as a function of operating temperature. From these measurements, the electric properties of InSb were found more sensitive to the impurities than stoichiometry.For the measurements of radiation, undoped InSb detectors with 1 mm diameter were fabricated. With this InSb detector, gamma ray emitted by Ba-133 were detected and the energy peak of 81 keV and its escape peak, 55 keV, were observed. The event ratio of the peaks of 55 keV to 81 keV were calculated by the simulation code EGS4 with changing the thickness of the depletion layer of InSb detector. From this simulation, the effective thickness of the depletion layer was determined as 3 micro-m.

进行了InSb晶体的生长。在上一个财政年度，我们获得了晶体速度为0.47 mm/h的单晶。所用原料为In和Sb，其纯度大于99.9999%。在晶体生长之后，我们将晶体切割成晶片。对于在晶体的顶部、中间和末端的三个晶片，以及商业InSb晶片，检查化学计量。此外，电性能，如电阻率，载流子浓度和霍尔迁移率测量这些晶片作为工作温度的函数。实验结果表明，InSb的电学性质对杂质的敏感性高于化学计量比。用该InSb探测器探测了Ba-133发射的γ射线，观测到81 keV的能量峰和55 keV的逃逸峰。利用EGS 4程序计算了InSb探测器耗尽层厚度变化时55 ~ 81 keV峰值的事例比。根据该模拟，耗尽层的有效厚度被确定为3微米。

项目成果

Cryogenic Neutron Detector by InSb Semiconductor Detector

InSb半导体探测器低温中子探测器

• 发表时间: 2004
• 期刊: Nuclear Instruments and Methods in Physics Research A520
• 作者: T.Nakamura;他
• 通讯作者: 他

First Detection of Gamma Ray Peaks by an Undoped InSb Schottky Detector

首次使用未掺杂 InSb 肖特基探测器检测伽马射线峰值

• 发表时间: 2006
• 期刊: Nucl. Instrum. Method in Phys. Res A559
• 作者: S. Hishiki;Y. Kogetsu;I. Kanno;T. Nakamura;M. Katagiri
• 通讯作者: M. Katagiri

I.Kanno他: "Radiation Measurements by a Cryogenic pn Junction InSb Detector with Operating Temperatures up to 115K"Rev.Sci.Instrum.. 74. 3968-3973 (2003)

I. Kanno 等人：“工作温度高达 115K 的低温 pn 结 InSb 探测器的辐射测量”Rev.Sci.Instrum.. 74. 3968-3973 (2003)

Schottky and pn Junction Cryogenic Radiation Detectors

肖特基和 pn 结低温辐射探测器

• 发表时间: 2004
• 期刊: Nuclear Instruments and Methods in Physics Research A520
• 作者: I.Kanno;他
• 通讯作者: 他

Photon detection by a cryogenic InSb detector

• DOI: 10.1063/1.1835632
• 发表时间: 2005-01
• 期刊: Review of Scientific Instruments
• 影响因子: 1.6
• 作者: I. Kanno;S. Hishiki;O. Sugiura;R. Xiang;T. Nakamura;M. Katagiri