权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Ultra Wideband and Ultrahigh Speed Optical Modulation Devices with Five-Layer Asymmetric Coupled Quantum Wells

具有五层不对称耦合量子阱的超宽带超高速光调制器件

基本信息

批准号：
16360030
负责人：
ARAKAWA Taro
金额：
$ 8.19万
依托单位：
Yokohama National University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2005
项目状态：
已结题

项目摘要

The aim of this research project was to study and develop wideband and ultrahigh speed optical modulators/switches with the giant electrorefractive (ER) effect of the five-layer asymmetric coupled quantum well (FACQW) in the core layer. The FACQW can produce giant electrorefractive index change Δn in the transparency wavelength region far from the absorption edge. We obtained the results as follows :1.GaAs/AlGaAs FACQW and its application to optical modulation devices(1)Observation of giant electrorefractive index change in the FACQWWe fabricated an FACQW phase modulator using molecular beam epitaxy (MBE), and for the first time, giant ER index change was successfully observed, as theoretically expected. Polarization dependence of the FACQW was also investigated theoretically and experimentally.(2)Fabrication and characterization of FACQW Mach-Zehnder modulatorWe designed and fabricated a Mach-Zehnder modulator with multiple FACQW in its core layer. The driving voltage of the modulator was successfully reduced.2.InGaAs/InAlAs FACQW for 1.55 micron and its application to optical modulation devices(1)Theoretical analyses of ER effect in InGaAs/InAlAs FACQWER effect of InGaAs/InAlAs FACQW was theoretically studied using k-p perturbation theory. As a result, we found a new structure that can produce giant ER effect as GaAs/AlGaAs FACQW.(2)Fabrication of FACQW using MBE and its characterizationWe grew InGaAs/InAlAs FACQWs using MBE, and characterized their crystal structures and optical properties. Results of photocurrent measurements showed the tendency similar to the calculated absorption spectra.(3)Fabrication and characterization of FACQW Mach-Zehnder modulatorWe developed fabrication techniques for a compact Mach-Zehnder modulator with multi-mode interferers (MMI). MMI devices were successfully fabricated using wet-etching technique.

本研究计画的目的是利用五层非对称耦合量子阱的巨电折变效应，研究并开发宽频及超高速光调制器/开关。FACQW在远离吸收边的透明波长区可以产生巨大的电折射率变化Δn。1. GaAs/AlGaAs FACQW及其在光调制器件中的应用（1）FACQW中巨电致折射率变化的观测我们用分子束外延（MBE）技术制作了FACQW相位调制器，首次成功地观测到了理论预期的巨电致折射率变化。对FACQW的偏振特性进行了理论和实验研究。（2）FACQW Mach-Zehnder调制器的制作与表征我们设计并制作了一个在其芯层中具有多个FACQW的Mach-Zehnder调制器。2.1.55 μ m InGaAs/InAlAs FACQW及其在光调制器件中的应用（1）InGaAs/InAlAs FACQW中电流变效应的理论分析采用k-p微扰理论对InGaAs/InAlAs FACQW的电流变效应进行了理论研究。结果，我们发现了一种新的结构，可以产生巨大的ER效应的GaAs/AlGaAs FACQW。（2）分子束外延法制备FACQW及其特性研究我们采用分子束外延法生长了InGaAs/InAlAs FACQW，并对其晶体结构和光学特性进行了表征。光电流的测量结果表明，类似的趋势计算的吸收光谱。（3）FACQW Mach-Zehnder调制器的制作与表征我们开发了一种紧凑型多模干涉器（MMI）Mach-Zehnder调制器的制作技术。采用湿法刻蚀技术成功地制备了MMI器件。